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ma-P 1210 process recipe

ma-P 1210 coats 1.0 µm at 3000 rpm with a published dose of 35 mJ/cm², the one-micron grade of the ma-P 1200 positive series.

https://nanyte.com/photoresists/ma-p-1210 · last updated 2026-09-13

At a glance
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Manufacturer
micro resist technology GmbH
Tone
positive
Chemistry
DNQ-novolak
Thickness
1 µm
Exposure dose
35 mJ/cm²
Applications
Etch mask · Electroplating / molding
The exposed resist dissolves in the developer; the unexposed film stays. Schematic cross-sections for ma-P 1210 — feature width, film aspect ratio and sidewall angle are illustrative, not to scale.
01 / Coating

Spin coating

The manufacturer does not publish a spin curve for ma-P 1210.

  • One tabulated point, not a sweep: the technical data table gives ma-P 1210 as 1 µm at 3000 rpm for 30 s, the single condition every grade in the series is listed at, and one anchor is not a curve.
  • The sheet also plots film thickness against spin speed from 1000 to 6000 rpm for all six grades, but as smooth lines with no markers and no numeric table, so no values are published from it.
  • Accel, dispense volume and edge-bead removal are not published.
Adhesion
HMDS not required — Not addressed in this product sheet.
02 / Bake

Soft bake

Soft bake
Not published — characterize on-tool
03 / Exposure

Exposure dose

The manufacturer publishes 35 mJ/cm². Dose scales with film thickness and depends on your optics, so treat it as a starting point and run a dose array.

As published
35 mJ/cm² is the published dose for ma-P 1210, measured under broadband exposure with the meter reading the 365 nm line rather than specified as a monochromatic i-line dose.

Not published for this resist: Dose at 365 nm, Dose at 405 nm — characterize on-tool.

SOURCE: Technical data table, p.1 of the ma-P 1200 series product sheet (ls.24.02.01), ma-P 1210 column

04 / Development

Development

Not published for this resist: Developer, Dilution, Time, Method, Rinse — characterize on-tool.

SOURCE: Unique features / Characteristics, p.1-2 of the ma-P 1200 series product sheet (ls.24.02.01)

05 / Post-processing

Hard bake, etch & strip

Etch resistance
"High pattern stability in wet etch processes and acid and alkaline plating baths" and "Highly stable in dry etch processes e.g. CHF3, CF4, SF6" (Unique features, p.1).

Not published for this resist: Hard bake, Descum, Stripper, Storage — characterize on-tool.

06 / Applications

Where it's used

Practical notes from the datasheet

ma-P 1210 is the one-micron grade in micro resist technology's ma-P 1200 series, and the sheet's example is a fair statement of what it is for: 0.85 µm lines resolved in a 1 µm film on a mask aligner, an aspect ratio a little over 1:1. It shares the lowest dose in the series, 35 mJ/cm², with the half-micron 1205, so on paper doubling the film thickness adds nothing to the exposure dose. Like the rest of the line it is marketed as stable in wet and dry etch chemistries and in acid and alkaline plating baths, and it develops in aqueous alkali. No softbake, developer product or develop time is published, so those are on-tool parameters.

07 / Family

Grades in this family

Other grades in the ma-P 1200 series line differ mainly in coating thickness:

ma-P 1200 series — grade comparison
GradeThicknessExposure dose
ma-P 12050.5 µm35 mJ/cm²
ma-P 1210 (this page)1 µm35 mJ/cm²
ma-P 12151.5 µm45 mJ/cm²
ma-P 12252.5 µm55 mJ/cm²
ma-P 12404 µm110 mJ/cm²
ma-P 12757.5–40 µm150 mJ/cm²
ma-P 1275 HV11–50 µm
08 / Sources

Sources & disclaimer

Manufacturer datasheet values are starting points; optimal parameters depend on your substrate, equipment and environment. Product names and trademarks belong to their respective owners. NANYTE is not affiliated with the manufacturers listed. Last updated 2026-09-13.

Cite this recipe

NANYTE. "ma-P 1210 process recipe." NANYTE Photoresist Library. https://nanyte.com/photoresists/ma-p-1210. Accessed 2026-09-13.

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