Skip to content

ma-P 1205 process recipe

ma-P 1205 is the thinnest grade of micro resist technology's ma-P 1200 positive series, coating 0.5 µm at 3000 rpm with a published dose of 35 mJ/cm².

https://nanyte.com/photoresists/ma-p-1205 · last updated 2026-09-13

At a glance
Download PDF
Manufacturer
micro resist technology GmbH
Tone
positive
Chemistry
DNQ-novolak
Thickness
0.5 µm
Exposure dose
35 mJ/cm²
Applications
Etch mask · Electroplating / molding
The exposed resist dissolves in the developer; the unexposed film stays. Schematic cross-sections for ma-P 1205 — feature width, film aspect ratio and sidewall angle are illustrative, not to scale.
01 / Coating

Spin coating

The manufacturer does not publish a spin curve for ma-P 1205.

  • One tabulated point, not a sweep: the technical data table gives ma-P 1205 as 0.5 µm at 3000 rpm for 30 s, the single condition every grade in the series is listed at, and one anchor is not a curve.
  • The sheet also plots film thickness against spin speed from 1000 to 6000 rpm for all six grades, but as smooth lines with no markers and no numeric table, so no values are published from it.
  • Accel, dispense volume and edge-bead removal are not published.
Adhesion
HMDS not required — Not addressed in this product sheet.
02 / Bake

Soft bake

Soft bake
Not published — characterize on-tool
03 / Exposure

Exposure dose

The manufacturer publishes 35 mJ/cm². Dose scales with film thickness and depends on your optics, so treat it as a starting point and run a dose array.

As published
35 mJ/cm² is the published dose for ma-P 1205, measured under broadband exposure with the meter reading the 365 nm line rather than specified as a monochromatic i-line dose.

Not published for this resist: Dose at 365 nm, Dose at 405 nm — characterize on-tool.

SOURCE: Technical data table, p.1 of the ma-P 1200 series product sheet (ls.24.02.01), ma-P 1205 column

04 / Development

Development

Not published for this resist: Developer, Dilution, Time, Method, Rinse — characterize on-tool.

SOURCE: Unique features / Characteristics, p.1-2 of the ma-P 1200 series product sheet (ls.24.02.01)

05 / Post-processing

Hard bake, etch & strip

Etch resistance
"High pattern stability in wet etch processes and acid and alkaline plating baths" and "Highly stable in dry etch processes e.g. CHF3, CF4, SF6" (Unique features, p.1).

Not published for this resist: Hard bake, Descum, Stripper, Storage — characterize on-tool.

06 / Applications

Where it's used

Practical notes from the datasheet

ma-P 1205 is the thinnest of micro resist technology's standard ma-P 1200 positive resists, coating half a micron at 3000 rpm for 30 s. The sheet's own example shows it holding 1 µm lines on 3 µm spaces at that thickness. Its dose, 35 mJ/cm² under broadband exposure metered at 365 nm, is the lowest in the series, shared only with ma-P 1210. Like the rest of the line it is sold for high pattern stability in wet etches and in acid and alkaline plating baths, for dry etching in CHF3, CF4 or SF6, and for easy removal; the listed applications are etch masks for Si, SiO2, semiconductors and metals, electroplating moulds and ion-implantation masks. The series develops in aqueous alkali. The sheet publishes no softbake, developer product or develop time, so those have to be set on-tool.

07 / Family

Grades in this family

Other grades in the ma-P 1200 series line differ mainly in coating thickness:

ma-P 1200 series — grade comparison
GradeThicknessExposure dose
ma-P 1205 (this page)0.5 µm35 mJ/cm²
ma-P 12101 µm35 mJ/cm²
ma-P 12151.5 µm45 mJ/cm²
ma-P 12252.5 µm55 mJ/cm²
ma-P 12404 µm110 mJ/cm²
ma-P 12757.5–40 µm150 mJ/cm²
ma-P 1275 HV11–50 µm
08 / Sources

Sources & disclaimer

Manufacturer datasheet values are starting points; optimal parameters depend on your substrate, equipment and environment. Product names and trademarks belong to their respective owners. NANYTE is not affiliated with the manufacturers listed. Last updated 2026-09-13.

Cite this recipe

NANYTE. "ma-P 1205 process recipe." NANYTE Photoresist Library. https://nanyte.com/photoresists/ma-p-1205. Accessed 2026-09-13.

Ready to run this process on your own tool?Talk to an engineer →

Expose it at 365 and 405 nm

NANYTE BEAM is a desktop maskless lithography system with software-selectable dual-wavelength exposure and 16-bit grayscale — no photomask, no mask cost, same-day iteration.

What is NANYTE BEAM?

Improve this recipe

Run this resist in your lab? Send us what actually works, or flag a value that's wrong. No account, no email needed — a handle and affiliation are optional and become your credit line. Every contribution is checked against published sources before it appears.