https://nanyte.com/photoresists/su-8-2075 · last updated 2026-09-28
- Manufacturer
- Kayaku Advanced Materials
- Tone
- negative
- Chemistry
- Epoxy (SU-8 type)
- Thickness
- 59–239 µm
- Developer
- SU-8 Developer; ethyl lactate or diacetone alcohol may also be used
- Applications
- MEMS structural · High aspect ratio · Electroplating / molding
Cross-checked — two independent extractions agree on the spin curve and the single-value figures.
- Substrate
- Resist
- Exposed
Spin coating
Data points
| Series | rpm | µm | Published dose |
|---|---|---|---|
| SU-8 2075 | 1000 | 239 | — |
| 2000 | 110 | 215–240 mJ/cm² · 85–110 µm row 240–260 mJ/cm² · 115–150 µm row within 10 % of a bracket edge | |
| 3000 | 76 | 150–215 mJ/cm² · 45–80 µm row within 10 % of a bracket edge | |
| 4000 | 59 | 150–215 mJ/cm² · 45–80 µm row |
Values are the manufacturer’s starting points, not a guarantee — characterize on your own tool. Series digitized from a published figure are approximate (±10 %).
Published dose is the datasheet’s own thickness bracket, quoted as printed — the full table and its citation are in the exposure section. A thickness the table does not cover shows nothing, and a thickness within 10 % of a bracket edge shows every bracket it could fall in.
read from figure — the round markers legended 'SU-8 2075' on Figure 1 'SU-8 2000 Thickness vs. Spin Speed', p.2 of the SU-8 2000, 2025-2075 Technical Data Sheet, August 2020. Four plotted markers at 1000, 2000, 3000 and 4000 rpm; no numeric table accompanies the chart. Reads are calibrated against the 20 µm axis ticks of the embedded chart image; values are reads to about ±1 µm.
- 239 µm at 1000 rpm, 110 µm at 2000, 76 µm at 3000 and 59 µm at 4000.
- The 1000 rpm point is thicker than the sheet's largest process row (160-225 µm), so bake, dose and develop at that speed are an extrapolation.
- Kayaku's recommended program for the series: dispense 1 ml of resist per inch (25 mm) of substrate diameter, spread at 500 rpm for 5-10 s at 100 rpm/s, then spin at 2000 rpm for 30 s at 300 rpm/s, choosing the final speed from the spin chart.
- Remove the edge bead with EBR PG so the mask can seat in close contact.
- Adhesion
- HMDS not required — 'Adhesion promoters are typically not required.' Clean and dry the substrate first — piranha (H2SO4 and H2O2) with a DI rinse, or RIE or an oxygen barrel asher. For applications that include electroplating, an HMDS pre-treatment is recommended.
Soft bake
- Soft bake
- 95 °C · hotplate
- Notes
- Times are set by film thickness, at 65 °C and then at 95 °C: 45-80 µm → 0-3 min at 65 °C then 6-9 min at 95 °C; 85-110 µm → 5 then 10-20 min; 115-150 µm → 5 then 20-30 min; 160-225 µm → 7 then 30-45 min. Use a level hotplate — convection ovens are not recommended because a skin can form and trap solvent. To check the bake, cool the wafer to room temperature and return it to the hotplate; if the film wrinkles, bake a few more minutes and repeat until it does not.
SOURCE: Table 2 'Soft Bake Times', p.3 of the SU-8 2000, 2025-2075 Technical Data Sheet, August 2020
Exposure dose
SU-8 2075's dose is published against film thickness, not as a single number. Read the row for the film you coat and run a dose array around it.
- As published
- Dose follows the film you spin, not the grade name: 45-80 µm films take 150-215 mJ/cm², 85-110 µm 215-240, 115-150 µm 240-260 and 160-225 µm 260-350 mJ/cm². On glass and most metals multiply by 1.5-2.
- Post-exposure bake
- 95 °C · hotplate
| Film thickness | Dose |
|---|---|
| 25–40 µm | 150–160 mJ/cm² |
| 45–80 µm | 150–215 mJ/cm² |
| 85–110 µm | 215–240 mJ/cm² |
| 115–150 µm | 240–260 mJ/cm² |
| 160–225 µm | 260–350 mJ/cm² |
SOURCE: SU-8 2000 2025-2075 Technical Data Sheet
Table 3 'Exposure Dose', p.3 of the SU-8 2000, 2025-2075 Technical Data Sheet, August 2020 — indexed by film thickness and shared by the four grades that sheet covers; no wavelength is attached to the table.
Development
- Developer
- SU-8 Developer; ethyl lactate or diacetone alcohol may also be used
- Method
- immersion, spray or spray-puddle
- Rinse
- Spray and wash with fresh SU-8 developer for about 10 s, and again for another 10 s if needed, then air-dry with filtered pressurised air or nitrogen. A white film during an IPA rinse means the unexposed resist is under-developed: return it to SU-8 developer and repeat the rinse.
- Developer family
- Solvent
Not published for this resist: Dilution, Time — characterize on-tool.
SOURCE: SU-8 2000 2025-2075 Technical Data Sheet
Development section and Table 6 'Development Times for SU-8 Developer', p.4 of the SU-8 2000, 2025-2075 Technical Data Sheet, August 2020
Hard bake, etch & strip
- Hard bake
- 150–250 °C · 5–30 min (optional — when the resist stays on the device)
- Descum
- Not published — characterize on-tool
- Etch resistance
- Not characterised as an etch mask. Once cross-linked the film is described as chemically and thermally stable — 315 °C at 5 % weight loss, a glass transition of 210 °C — and extremely difficult to remove with solvent strippers.
- Stripper
- Minimally cross-linked SU-8 2000 swells and lifts off in Remover PG at 50-80 °C for 30-90 min; with a 30-100 nm OmniCoat underlayer the lift-off is clean. Fully cured or hard-baked SU-8 2000 cannot be removed without OmniCoat. To rework fully cross-linked films: piranha, plasma ash, RIE (200 W, 80 sccm O2, 8 sccm CF4, 100 mTorr, 10 °C), laser ablation or pyrolysis.
- Storage
- Store upright in tightly closed containers in a cool, dry place away from direct sunlight, light, acids, heat and ignition sources, at 4-21 °C (40-70 °F). Shelf life is thirteen months from date of manufacture.
SOURCE: Hard bake (cure) section, p.5 of the SU-8 2000, 2025-2075 Technical Data Sheet, August 2020
Where it's used
Practical notes from the datasheet
SU-8 2075 is the most viscous grade on this sheet (22,000 cSt, 73.45 % solids) and makes the tallest single coats in it, from about 60 µm at 4000 rpm to beyond 200 µm at the slow end. Everything scales with that height. A 100 µm film bakes 5 minutes at 65 °C and 10-20 minutes at 95 °C, takes 215-240 mJ/cm², post-bakes 2-5 minutes at 65 °C and 8-10 minutes at 95 °C and develops for 7-10 minutes; a 200 µm film needs 30-45 minutes of soft bake, up to 350 mJ/cm² and around a quarter of an hour in developer with strong agitation. If surface cracks appear after development, the sheet anneals them with a couple of minutes at 150 °C. The cured structure is permanent — use OmniCoat underneath if it has to be released.
Grades in this family
Other grades in the SU-8 2000 series line differ mainly in coating thickness:
Troubleshooting
Common failure modes for SU-8 2075, answered from the manufacturer's datasheet and application notes. These are starting points — your substrate, tooling and environment shift the specifics, so calibrate on-tool.
At 1000 rpm SU-8 2075 comes out thicker than the datasheet tables go. What process do I use?
SU-8 2075 reaches about 239 µm at 1000 rpm, but the bake, dose and develop tables stop at the 160–225 µm row. That top row is the nearest published reference: soft bake 7 min at 65 °C then 30–45 min at 95 °C, 260–350 mJ/cm², PEB 5 min at 65 °C then 12–15 min at 95 °C, and 15–17 min in SU-8 developer. Above 225 µm there are no published numbers, so work outward from that row and confirm with the wrinkle test and the latent-image check.
SOURCE: Kayaku SU-8 2000 (2025–2075) Technical Data Sheet, Aug 2020 — Figure 1, p.2; Tables 2–3, p.3; Tables 5–6, p.4
After 15 minutes in developer my 200 µm SU-8 2075 still leaves a cloudy film in the IPA rinse. What now?
That white film is underdeveloped, unexposed resist. Return the wafer to SU-8 developer until it clears and repeat the rinse. The published time for 160–225 µm is 15–17 min and is only approximate, since dissolution rate varies widely with agitation — use strong agitation for thick, high-aspect-ratio structures. An ultrasonic or megasonic bath energizes the solvent for more effective development of the unexposed resist, and Kayaku notes it may help with vias, holes and tight pitch.
SOURCE: Kayaku SU-8 2000 (2025–2075) Technical Data Sheet, Aug 2020 — Development, Table 6, Rinse and Dry and notes, p.4
My thick SU-8 2075 shows surface cracks after development. How do I reduce or repair them?
Two published levers. Before development, the PEB table includes an optional 65 °C step specifically for stress reduction — 1–2 min at 45–80 µm up to 5 min at 115–225 µm — ahead of the 95 °C bake. After development, the datasheet recommends a short bake at 150 °C for a couple of minutes to anneal surface cracks, and notes this applies to all film thicknesses.
SOURCE: SU-8 2000 (2025–2075) Technical Data Sheet
Kayaku SU-8 2000 (2025–2075) Technical Data Sheet, Aug 2020 — Table 5 Post Exposure Bake Times, p.4; Hard Bake (cure) note, p.5
The sidewalls of my tall SU-8 2075 structures aren't vertical. What does Kayaku recommend?
Cut the UV below 350 nm. The datasheet recommends a long-pass filter (Omega Optical PL-360-LP) or a 365 nm cut-off filter for vertical sidewalls, and says exposure time rises by roughly 40 % to reach the optimum dose. For SU-8 2075 that dose already runs from 150–215 mJ/cm² at 45–80 µm to 260–350 mJ/cm² at 160–225 µm on silicon, so run an exposure matrix: optimal exposure gives a latent image 5–15 s after the wafer goes on the PEB hotplate, not before.
SOURCE: Kayaku SU-8 2000 (2025–2075) Technical Data Sheet, Aug 2020 — Exposure, note and Table 3 Exposure Dose, p.3
Sources & disclaimer
- Kayaku Advanced Materials — SU-8 2075 datasheet (SU-8 2000, 2025-2075 Technical Data Sheet, August 2020) · accessed 2026-09-10
Manufacturer datasheet values are starting points; optimal parameters depend on your substrate, equipment and environment. Product names and trademarks belong to their respective owners. NANYTE is not affiliated with the manufacturers listed. Last updated 2026-09-28.