https://nanyte.com/photoresists/su-8-2100 · last updated 2026-07-12
- Manufacturer
- MicroChem
- Tone
- negative
- Chemistry
- Epoxy (SU-8 type)
- Thickness
- 103–269 µm
- Developer
- SU-8 Developer (MicroChem)
- Applications
- High aspect ratio · MEMS structural · Electroplating / molding
Cross-checked — two independent extractions agree.
Spin coating
SU-8 2100 is spin-coated to 103–269 µm. The curve below is redrawn from the manufacturer's published data — read your target thickness off the vertical axis and take the matching spin speed as a starting point.
Data points
| Series | rpm | µm |
|---|---|---|
| SU-8 2100 | 1000 | 269 |
| 2000 | 137 | |
| 3000 | 103 |
Values are the manufacturer's starting points, not a guarantee; verify on your own tool. Characterize on-tool. Series digitized from a published figure were independently cross-checked by a second blind read; treat those values as approximate (±10 %).
re-extracted 2026-07-12, pixel-calibrated (PyMuPDF: axis-tick word coordinates for calibration, vector marker path rects for data points, colored (0,0,1)=blue to isolate from the red 2150 trace); Figure 1 "SU-8 2000 Spin Speed versus Thickness", p.2 of MicroChem "SU-8 2000 Permanent Epoxy Negative Photoresist Processing Guidelines for SU-8 2100 and SU-8 2150" (CNR-Nano mirror). Chart plots only two curves, unambiguously distinguished by both color and marker shape: SU-8 2150 = red triangles (top curve), SU-8 2100 = blue circles (bottom curve), matching Table 1's viscosity ordering (2100 = 45,000 cSt < 2150 = 80,000 cSt, so 2100 should coat thinner at a given speed). Each curve has only 3 markers, at 1000/2000/3000 rpm — the blue trace does not extend to 3500 rpm despite the chart's wider axis range. Supersedes the earlier eyeball read (270/137/105), which was already close but imprecise.
Recommended program (same for both grades in this document): dispense 1 ml of resist per inch (25 mm) of substrate diameter; spin at 500 rpm for 5-10 s at 100 rpm/s acceleration, then spin at the target speed (per Figure 1) for 30 s at 300 rpm/s acceleration. Edge bead removal (EBR) with MicroChem's EBR PG solvent stream at the wafer edge is recommended before soft bake, both to limit hotplate contamination and to let the photomask reach close contact with the wafer. Source: "Coat" / "Recommended Program" / "Edge Bead Removal (EBR)", p.2.
- Adhesion
Soft bake
- Soft bake
- Not published — characterize on-tool
- Notes
SOURCE: Table 2 "Soft Bake Times", p.2 of the MicroChem SU-8 2000 (2100-2150) Processing Guidelines
Exposure dose
The manufacturer does not publish a clearing dose for SU-8 2100. Determine it with a dose array on your own tool.
- As published
Not published for this resist: Dose at 365 nm, Dose at 405 nm — characterize on-tool.
Development
- Developer
- SU-8 Developer (MicroChem)
- Method
- immersion
- Rinse
- IPA
- Developer family
- Solvent
Not published for this resist: Dilution, Time — characterize on-tool.
SOURCE: "Development" and "Rinse and Dry" sections plus Table 6 "Development Times for SU-8 Developer", p.3
Hard bake, etch & strip
- Stripper
- Storage
Not published for this resist: Hard bake, Descum, Etch resistance — characterize on-tool.
SOURCE: "Hard Bake (cure)" section, p.4
Where it's used
SU-8 2100 is the second-highest-viscosity grade in MicroChem's SU-8 2000 line (45,000 cSt) and is built for very thick, single-coat films — its own spin curve runs roughly 105-270 µm over 1000-3000 rpm. Reach for 2100 only when the device genuinely needs that film height; its long soft-bake and develop times and thick-film handling make the thinner SU-8 2025 and 2050 grades the better default whenever they can meet the thickness target. Like every SU-8 2000 grade, it cross-links in two stages — exposure generates acid, and the post-exposure bake thermally drives the epoxy cross-linking — so PEB is a required processing step, not an optional cure, and at this thickness the bake times stretch into hours (up to 60-120 minutes soft bake and 20-30 minutes PEB at 95°C for the thickest bin in this document). Soft-bake, PEB, dose and develop times are published only as thickness-binned ranges shared with SU-8 2150; treat the low end of the matching bin as a starting point and use the datasheet's cool-down/re-heat 'wrinkle' test to confirm the soft bake is complete before proceeding. Once fully cross-linked, SU-8 is notoriously hard to strip: plain solvent remover only works on minimally exposed/baked film, and a hard-baked structure needs either a sacrificial OmniCoat layer beneath it or an oxidizing strip (piranha, plasma ash, RIE, laser ablation, pyrolysis) to remove. Edge bead removal before soft bake is especially important at this film thickness to keep the photomask in close contact with the wafer.
Sources & disclaimer
- MicroChem — SU-8 2100 datasheet (No revision/date string is printed in the document body (a 5-page processing-guidelines PDF with no header/footer revision code). The mirror's filename indicates 'Ver5' (a byu.edu mirror of the apparently same document is filenamed 'Ver5-1').) · accessed 2026-07-10
- Shaw et al.. Negative photoresists for optical lithography. IBM Journal of Research and Development (1997). doi:10.1147/rd.411.0081The IBM origin paper of SU-8.
- Lorenz et al.. SU-8: a low-cost negative resist for MEMS. Journal of Micromechanics and Microengineering (1997). doi:10.1088/0960-1317/7/3/01015:1 aspect ratios in 1997 — the paper that made SU-8 a MEMS resist.
- del Campo et al.. SU-8: a photoresist for high-aspect-ratio and 3D submicron lithography. Journal of Micromechanics and Microengineering (2007). doi:10.1088/0960-1317/17/6/R01The canonical SU-8 review.
- Qasaimeh et al.. Microfluidic probes for use in life sciences and medicine. Lab Chip (2013). doi:10.1039/C2LC40898HFree-standing SU-8 microfluidic probes for live-cell chemistry.
Manufacturer datasheet values are starting points; optimal parameters depend on your substrate, equipment and environment. Product names and trademarks belong to their respective owners. NANYTE is not affiliated with the manufacturers listed. Last updated 2026-07-12.
