https://nanyte.com/photoresists/su-8-2007 · last updated 2026-09-28
- Manufacturer
- Kayaku Advanced Materials
- Tone
- negative
- Chemistry
- Epoxy (SU-8 type)
- Thickness
- 6.7–12.4 µm
- Developer
- SU-8 Developer; ethyl lactate or diacetone alcohol may also be used
- Applications
- MEMS structural · High aspect ratio · Electroplating / molding
Cross-checked — two independent extractions agree on the spin curve and the single-value figures.
- Substrate
- Resist
- Exposed
Spin coating
Data points
| Series | rpm | µm | Published dose |
|---|---|---|---|
| SU-8 2007 | 1000 | 12 | 110–140 mJ/cm² · 6–15 µm row |
| 1500 | 10 | 110–140 mJ/cm² · 6–15 µm row | |
| 2000 | 8.3 | 110–140 mJ/cm² · 6–15 µm row | |
| 2500 | 7.4 | 110–140 mJ/cm² · 6–15 µm row | |
| 3000 | 6.9 | 110–140 mJ/cm² · 6–15 µm row | |
| 3500 | 6.7 | 110–140 mJ/cm² · 6–15 µm row |
Values are the manufacturer’s starting points, not a guarantee — characterize on your own tool. Series digitized from a published figure are approximate (±10 %).
Published dose is the datasheet’s own thickness bracket, quoted as printed — the full table and its citation are in the exposure section. A thickness the table does not cover shows nothing, and a thickness within 10 % of a bracket edge shows every bracket it could fall in.
read from figure — the grey triangle markers legended 'SU-8 2007' on Figure 1b 'SU-8 2000 Thickness vs. Spin Speed', p.2 of the SU-8 2000, 2000.5-2015 Technical Data Sheet, ver. 1, August 2020. Six of its seven plotted markers at 500 rpm steps; no numeric table accompanies the chart. Reads are calibrated against the 5 µm axis ticks of the embedded chart image. The 4000 rpm marker is left out; see the spin notes.
- The markers run from 12.4 µm at 1000 rpm to 6.7 µm at 3500 rpm.
- The chart's seventh marker, at 4000 rpm, sits higher than the 3500 rpm one, at about 7.2 µm — a film cannot get thicker as the wafer spins faster, so that point is not carried; treat the grade as bottoming out near 7 µm.
- Kayaku's recommended program for the series: dispense 1 ml of resist per inch (25 mm) of substrate diameter, spread at 500 rpm for 5-10 s at 100 rpm/s, then spin at 2000 rpm for 30 s at 300 rpm/s, choosing the final speed from the spin chart.
- Remove the edge bead with EBR PG so the mask can seat in close contact.
- Adhesion
- HMDS not required — 'Adhesion promoters are typically not required.' Clean and dry the substrate first — piranha (H2SO4 and H2O2) with a DI rinse, or RIE or an oxygen barrel asher. For applications that include electroplating, an HMDS pre-treatment is recommended.
Soft bake
- Soft bake
- 95 °C · hotplate
- Notes
- Times are set by film thickness: 6-15 µm → 2-3 min at 95 °C. Use a level hotplate — convection ovens are not recommended because a skin can form and trap solvent. To check the bake, cool the wafer to room temperature and return it to the hotplate; if the film wrinkles, bake a few more minutes and repeat until it does not.
SOURCE: Table 2 'Soft Bake Times', p.3 of the SU-8 2000, 2000.5-2015 Technical Data Sheet, ver. 1, August 2020
Exposure dose
SU-8 2007's dose is published against film thickness, not as a single number. Read the row for the film you coat and run a dose array around it.
- As published
- Dose follows the film you spin, not the grade name: 6-15 µm films take 110-140 mJ/cm². On glass and most metals multiply by 1.5-2.
- Post-exposure bake
- 95 °C · hotplate
| Film thickness | Dose |
|---|---|
| 0.5–2 µm | 60–180 mJ/cm² |
| 3–5 µm | 90–105 mJ/cm² |
| 6–15 µm | 110–140 mJ/cm² |
| 16–25 µm | 140–150 mJ/cm² |
| 26–40 µm | 150–160 mJ/cm² |
SOURCE: SU-8 2000 2000.5-2015 Technical Data Sheet
Table 3 'Exposure Dose', p.3 of the SU-8 2000, 2000.5-2015 Technical Data Sheet, ver. 1, August 2020 — indexed by film thickness and shared by the six grades that sheet covers; no wavelength is attached to the table.
Development
- Developer
- SU-8 Developer; ethyl lactate or diacetone alcohol may also be used
- Method
- immersion, spray or spray-puddle
- Rinse
- Spray and wash the developed image with fresh SU-8 developer for about 10 s, then air-dry with filtered pressurised air or nitrogen.
- Developer family
- Solvent
Not published for this resist: Dilution, Time — characterize on-tool.
SOURCE: SU-8 2000 2000.5-2015 Technical Data Sheet
Development section and Table 6 'Development Times for SU-8 Developer', p.4 of the SU-8 2000, 2000.5-2015 Technical Data Sheet, ver. 1, August 2020
Hard bake, etch & strip
- Hard bake
- 150–250 °C · 5–30 min (optional — when the resist stays on the device)
- Descum
- Not published — characterize on-tool
- Etch resistance
- Not characterised as an etch mask. Once cross-linked the film is described as chemically and thermally stable — 315 °C at 5 % weight loss, a glass transition of 210 °C — and extremely difficult to remove with solvent strippers.
- Stripper
- Minimally cross-linked SU-8 2000 swells and lifts off in Remover PG at 50-80 °C for 30-90 min; with a 30-100 nm OmniCoat underlayer the lift-off is clean. Fully cured or hard-baked SU-8 2000 cannot be removed without OmniCoat. To rework fully cross-linked films: piranha, plasma ash, RIE (200 W, 80 sccm O2, 8 sccm CF4, 100 mTorr, 10 °C), laser ablation or pyrolysis.
- Storage
- Store upright in tightly closed containers in a cool, dry place away from direct sunlight, light, acids, heat and ignition sources, at 4-21 °C (40-70 °F). Shelf life is thirteen months from date of manufacture.
SOURCE: Hard bake (cure) section, p.5 of the SU-8 2000, 2000.5-2015 Technical Data Sheet, ver. 1, August 2020
Where it's used
Practical notes from the datasheet
SU-8 2007 covers roughly 7-12 µm, and its whole range sits inside a single row of the sheet's process tables, which makes it simple to set up: soft bake 2-3 minutes at 95 °C, expose 110-140 mJ/cm² on silicon, post-bake 3-4 minutes, and develop 2-3 minutes in SU-8 Developer. That is the practical case for it over SU-8 2010, whose thicker coats push into the next row. The published spin chart has one inconsistent marker — its 4000 rpm point reads thicker than 3500 rpm — so do not expect to thin this grade much below 7 µm by spinning harder. The cured epoxy is permanent and hard to strip; plan OmniCoat if it must be removed.
Grades in this family
Other grades in the SU-8 2000 series line differ mainly in coating thickness:
Troubleshooting
Common failure modes for SU-8 2007, answered from the manufacturer's datasheet and application notes. These are starting points — your substrate, tooling and environment shift the specifics, so calibrate on-tool.
How fast should the latent image appear when my SU-8 2007 wafer goes onto the PEB hotplate?
With optimal exposure, a visible latent image appears within 5–15 seconds of the wafer going onto the PEB hotplate — and not before. If there is still no image after 1 min at 95 °C, exposure, heat or both were insufficient. SU-8 2007 coats about 6.7–12.4 µm, all inside the datasheet's 6–15 µm row, so the reference points are 110–140 mJ/cm² and a 3–4 min PEB at 95 °C, started directly after exposure. Use an exposure matrix to find the dose that hits that 5–15 s window.
SOURCE: SU-8 2000 (2000.5–2015) Technical Data Sheet
Kayaku SU-8 2000 (2000.5–2015) Technical Data Sheet, ver. 1, Aug 2020 — Figure 1b, p.2; Exposure note and Table 3, p.3; Post Exposure Bake note and Table 5, p.4
My SU-8 2007 recipe works on silicon but underexposes on glass and ITO. How much more dose?
Kayaku lists 1.5X the silicon dose for glass, Pyrex and indium tin oxide, and 1.5–2X for silicon nitride and the metals (gold, aluminium, copper, nickel, NiFe, titanium). For SU-8 2007 the silicon baseline is the 6–15 µm row, 110–140 mJ/cm². The long-pass filter Kayaku recommends for vertical sidewalls (PL-360-LP, which removes UV below 350 nm) needs roughly 40 % more exposure time to reach the optimum dose.
SOURCE: SU-8 2000 (2000.5–2015) Technical Data Sheet
Kayaku SU-8 2000 (2000.5–2015) Technical Data Sheet, ver. 1, Aug 2020 — Exposure and Table 3 Exposure Dose, p.3; Table 4 Exposure Doses for Various Substrates, p.4
Remover PG won't touch my hard-baked SU-8 2007. How do I get it off?
Remover PG only swells and lifts minimally cross-linked SU-8 2000; fully cured or hard-baked film cannot be removed with it unless OmniCoat (30–100 nm) was applied underneath, in which case a 50–80 °C Remover PG soak of 30–90 min can give a clean lift-off. Without OmniCoat, fully cross-linked SU-8 2007 has to be reworked by piranha or other oxidizing acids, plasma ash, RIE, laser ablation or pyrolysis. The published RIE condition is 200 W, 80 sccm O₂, 8 sccm CF₄, 100 mTorr, 10 °C.
SOURCE: Kayaku SU-8 2000 (2000.5–2015) Technical Data Sheet, ver. 1, Aug 2020 — Removal, p.5; rework and Plasma Removal, p.6
SU-8 2007 left in my device changes properties after thermal cycling. What hard bake should I use?
SU-8 2000 is a thermal resin, and its properties can keep changing whenever it sees a higher temperature than it has before. Kayaku's fix is a final cure about 10 °C above the maximum operating temperature of the device, typically somewhere in 150–250 °C for 5–30 min depending on the degree of cure needed. The step is generally only needed when the part sees thermal processing in normal use. Remember a hard-baked film is then very hard to strip.
SOURCE: Kayaku SU-8 2000 (2000.5–2015) Technical Data Sheet, ver. 1, Aug 2020 — Hard Bake (cure) and Removal, p.5
Sources & disclaimer
- Kayaku Advanced Materials — SU-8 2007 datasheet (SU-8 2000, 2000.5-2015 Technical Data Sheet, ver. 1, August 2020) · accessed 2026-09-10
Manufacturer datasheet values are starting points; optimal parameters depend on your substrate, equipment and environment. Product names and trademarks belong to their respective owners. NANYTE is not affiliated with the manufacturers listed. Last updated 2026-09-28.