Skip to content

TI 35E process recipe

TI 35E is MicroChemicals' image-reversal resist, coating 3.0-4.5 µm and run with a 115-120 °C reversal bake and a flood exposure to produce the undercut wall that lifts off evaporated films up to 6 µm thick.

https://nanyte.com/photoresists/ti-35e · last updated 2026-09-10

At a glance
Download PDF
Manufacturer
MicroChemicals GmbH
Tone
image reversal
Thickness
3–4.5 µm
Exposure dose
140 mJ/cm²
Developer
AZ 826 MIF (metal-ion-free), or a potassium- or sodium-based developer — AZ 400K diluted 1:4, or AZ 351B
Applications
Lift-off · Image reversal · Etch mask
The reversal bake fixes the exposed pattern and the flood exposure makes everything else soluble, so the developed image is inverted — typically with an undercut sidewall. Schematic cross-sections for TI 35E — feature width, film aspect ratio and sidewall angle are illustrative, not to scale.
01 / Coating

Spin coating

The manufacturer does not publish a spin curve for TI 35E.

  • No spin curve is plotted or tabulated.
  • The datasheet gives the 3.0-4.5 µm range and one anchor inside it — 'With spin-speed of 3000 rpm a resist thickness of 3.6 µm will be achieved' (p.1) — which is a single point, not a sweep.
  • The only other coating instruction is to hold the final speed for at least 30-40 s.
  • Accel, dispense volume and edge-bead removal are not published.
  • Note the edge effect the document does flag: on square substrates the film at the edges runs significantly thicker than 3-4 µm, which is why it tells you to double the post-exposure delay there.
Adhesion
HMDS recommended — Two routes are given. Dehydrate on a hotplate at a minimum of 120 °C for 10 min (or 30 min in a furnace at the same temperature) to drive off adsorbed water, or prime with HMDS — 'only from vapor phase at an optimum substrate temperature of 125°C'. For SiNx surfaces the sheet adds that using ammonia during the PECVD deposition improves resist adhesion.
02 / Bake

Soft bake

Soft bake
95 °C · 2 min · hotplate
Notes
95 °C for 2 min on a hotplate. A furnace alternative of 95 °C for 20 min is given.

SOURCE: Processing the TI 35E, p.4

03 / Exposure

Exposure dose

The manufacturer publishes 140 mJ/cm². Dose scales with film thickness and depends on your optics, so treat it as a starting point and run a dose array.

As published
140 mJ/cm² is the typical first exposure, with 100-250 mJ/cm² the working range. The lamp is broadband or g/h/i-line; the number is metered on the 365 nm line rather than specified as a monochromatic i-line dose.
Post-exposure bake
115–120 °C · 2 min · hotplate
Flood exposure
540 mJ/cm²

Not published for this resist: Dose at 365 nm, Dose at 405 nm — characterize on-tool.

SOURCE: Processing the TI 35E, p.4 ('at a dose of 140 mJ/cm2') and the process overview table, p.6 ('100 .. 250, 140 (typ.)')

04 / Development

Development

Developer
AZ 826 MIF (metal-ion-free), or a potassium- or sodium-based developer — AZ 400K diluted 1:4, or AZ 351B
Dilution
AZ 400K at 1:4; no dilution is stated for AZ 826 MIF or AZ 351B.
Developer family
TMAH or buffered alkaline

Not published for this resist: Time, Method, Rinse — characterize on-tool.

SOURCE: Processing the TI 35E, p.5, and the process overview table…

Processing the TI 35E, p.5, and the process overview table, p.6 ('Developer — Clariant AZ 351B, MIF Developers e.g. AZ 826')

05 / Post-processing

Hard bake, etch & strip

Hard bake
140–145 °C · 2 min · hotplate
Etch resistance
Built for wet chemistry. In 12.5 % HF buffered oxide etch, after a 125 °C / 2 min hardbake, the sheet reports no visible degradation over 10 min and structuring of SiNx to at least 100 nm. On thick thermal SiO2 in 20 % HF it again reports no visible degradation after 10 min, and says concentrated 50 % HF is possible for several minutes. For direct mesa grooving the TI series etches Si without an SiO2 mask, using HNO3 (70 %) : HF (50 %) : H2O at 75 : 10 : 25 to cut a groove up to 4 µm deep in 45 s.
Stripper
AZ 100 remover, or acetone. For lifting off the deposited film the sheet lists PGMEA, NMP, MMP, EEP, DMF, acetone and ethyl lactate.

Not published for this resist: Descum, Storage — characterize on-tool.

SOURCE: Processing the TI 35E, p.5, the fields-of-application section, p.3, and the process overview table, p.6

06 / Applications

Where it's used

Practical notes from the datasheet

TI 35E is run in image-reversal mode, which is why the exposure mask has to be inverted: the areas exposed through the mask are the ones that survive. The sequence adds two steps to an ordinary positive process — the reversal bake and a maskless flood exposure — and needs no new equipment beyond that. The payoff is the negative wall profile, and the first exposure is the knob that sets it: 140 mJ/cm² suits most work, and lowering it opens the undercut further, at the cost of eroding the areas that are supposed to clear if taken too far. At 3.6 µm coated from 3000 rpm the sheet rates the undercut for lifting off evaporated films up to 6 µm thick, with typical feature aspect ratios of 1.6 to 2.0; sputtered films reach roughly 1 µm instead, because the deposition is not directional, and may need ultrasonic help. One step is easy to skip and shouldn't be: after the first exposure the wafer rests at room temperature for at least 10 minutes so the nitrogen generated during exposure can diffuse out, doubled for square substrates whose edge bead runs thicker. The other trap is the reversal bake temperature, which the datasheet flags as the critical one and the reason it steers you off furnace baking.

07 / Sources

Sources & disclaimer

Manufacturer datasheet values are starting points; optimal parameters depend on your substrate, equipment and environment. Product names and trademarks belong to their respective owners. NANYTE is not affiliated with the manufacturers listed. Last updated 2026-09-10.

Cite this recipe

NANYTE. "TI 35E process recipe." NANYTE Photoresist Library. https://nanyte.com/photoresists/ti-35e. Accessed 2026-09-10.

Ready to run this process on your own tool?Talk to an engineer →

Expose it at 365 and 405 nm

NANYTE BEAM is a desktop maskless lithography system with software-selectable dual-wavelength exposure and 16-bit grayscale — no photomask, no mask cost, same-day iteration.

What is NANYTE BEAM?

Improve this recipe

Run this resist in your lab? Send us what actually works, or flag a value that's wrong. No account, no email needed — a handle and affiliation are optional and become your credit line. Every contribution is checked against published sources before it appears.