https://nanyte.com/photoresists/nr9-1500py · last updated 2026-07-26
- Manufacturer
- Futurrex, Inc.
- Tone
- negative
- Thickness
- 1.2–3 µm
- Exposure dose
- 190 mJ/cm² at 365 nm
- Developer
- Resist Developer RD6
- Applications
- Lift-off · Etch mask
Cross-checked — two independent extractions agree on the spin curve and the single-value figures.
- Substrate
- Resist
- Exposed
Spin coating
Data points
| Series | rpm | µm |
|---|---|---|
| NR9-1500PY | 800 | 3.0 |
| 1000 | 2.7 | |
| 2000 | 1.9 | |
| 3000 | 1.5 | |
| 4000 | 1.3 | |
| 5000 | 1.2 |
Values are the manufacturer’s starting points, not a guarantee — characterize on your own tool.
numeric table 'Film thickness after 150°C hotplate bake for 60 s. / Coating spin speed, 40 s spin (rpm): (nm)', p.1 of Futurrex NR9-1500PY Technical Information. The datasheet publishes each point as an nm RANGE, not a single value (e.g. 800 rpm -> 2850-3150 nm); each point above is the exact midpoint of that stated range (every range is symmetric, approx. nominal +/-5%), converted nm->um. Raw ranges: 800rpm=2850-3150nm, 1000rpm=2565-2835nm, 2000rpm=1805-1995nm, 3000rpm=1425-1575nm, 4000rpm=1235-1365nm, 5000rpm=1140-1260nm. The 3000 rpm midpoint (1500 nm = 1.5 um) matches the '1500' in the product name NR9-1500PY, corroborating the midpoint reading.
- Spin coating is at a selected speed for 40 s (Processing step 1).
- Edge Bead Remover EBR2 is dispensed simultaneously onto top and bottom surfaces through nozzles 0.5-1.0 cm from the substrate edge, starting as soon as edge bead forms (3-5 s after resist dispense ends) and stopping 5 s before spin cycle completion (Processing step 2).
- Bake times throughout this datasheet assume a good thermal conductor substrate (Si, GaAs); the datasheet instructs multiplying bake times by 3.5 for poor thermal conductors such as glass.
- Adhesion
- HMDS not required — Not addressed in this datasheet.
Soft bake
- Soft bake
- 150 °C · 60 s · hotplate
- Notes
- Applies to good thermal conductors (Si, GaAs, etc.); bake times must be multiplied by 3.5 for poor thermal conductors such as glass (no explicit alternate schedule given for this SKU, unlike NR71-3000P's dual schedule).
SOURCE: Processing step 3, p.2; corroborated by Properties table heading, p.1
Exposure dose
The manufacturer publishes 190 mJ/cm² at 365 nm. Dose scales with film thickness and depends on your optics, so treat it as a starting point and run a dose array.
- Dose at 365 nm
- 190 mJ/cm²
- Dose at 405 nm
- Not published — characterize on-tool
- As published
- 190 mJ/cm² at 365 nm is the only exposure figure Futurrex prints for this resist, and it is normalized to a 1 µm film — there is no h-line number and nothing for a thicker coat.
- Post-exposure bake
- 100 °C · 60 s
SOURCE: Properties, p.1
Development
- Developer
- Resist Developer RD6
- Time
- 12 s
- Rinse
- Deionized water rinse until water resistivity reaches prescribed limit (Processing step 7).
- Developer family
- TMAH-based
Not published for this resist: Dilution, Method — characterize on-tool.
SOURCE: Processing steps 6-7, p.2
Hard bake, etch & strip
- Etch resistance
- "Superior selectivity in RIE process" (Description, p.1).
- Stripper
- Resist Remover RR5 at room temperature (Processing step 9, p.2).
- Storage
- "Guaranteed shelf life at 25°C storage (years) 3" (Properties, p.1); "shelf life exceeding 3 years at room temperature storage" (Description, p.1).
Not published for this resist: Hard bake, Descum — characterize on-tool.
Where it's used
Practical notes from the datasheet
NR9-1500PY is Futurrex's negative-tone, 365 nm lift-off resist, formulated in cyclohexanone and developed in the basic aqueous RD6 developer; degree of undercut is tuned by exposure dose (per the datasheet, 'easy adjustment of the degree of resist undercut as a function of exposure energy') as well as by extending development time via RD6/water dilution. The product code encodes its reference film thickness: '1500' corresponds to the 3000 rpm/40 s coating point (1425-1575 nm, midpoint 1.5 µm) in the published spin table. Bake times given here (150°C softbake, 100°C PEB, both 60 s) assume a substrate that conducts heat well (silicon, GaAs); the datasheet explicitly instructs multiplying bake times by 3.5 on poor thermal conductors such as glass — a detail easy to miss when porting a Si recipe to a transparent substrate. Sensitivity is published as 190 mJ/cm² at 365 nm normalized to a 1 µm-thick film rather than as an absolute dose for whatever process thickness is actually chosen, and no h-line (405 nm) dose is given.
Troubleshooting
Common failure modes for NR9-1500PY, answered from the manufacturer's datasheet and application notes. These are starting points — your substrate, tooling and environment shift the specifics, so calibrate on-tool.
How do I control the lift-off undercut with NR9-1500PY?
NR9-1500PY is a negative-tone resist whose degree of undercut is tuned by exposure energy — the datasheet's stated advantage is 'easy adjustment of the degree of resist undercut as a function of exposure energy.' The undercut can also be opened up by extending development. Process is soft bake 150°C/60 s, expose at 365 nm, PEB 100°C/60 s, develop in RD6, then strip in RR5.
SOURCE: Futurrex NR9-1500PY Technical Information — Description, p.1, and Processing steps 3–9, p.2
What is the develop time for NR9-1500PY, and how do I extend it?
The standard example is 12 s in Resist Developer RD6 for a 1.5 µm film, including overdevelopment, by spray or immersion, followed by a DI-water rinse to the prescribed resistivity. To slow the develop down to a 60 s process, the datasheet specifies diluting RD6 with water 3:1 — a distinct, slower develop rather than simply running the neat developer longer.
SOURCE: Futurrex NR9-1500PY Technical Information — Processing steps 6–7, p.2
What exposure dose does NR9-1500PY need at 365 nm?
Sensitivity is published as 190 mJ/cm² at 365 nm, explicitly normalized to a 1 µm-thick film — not an absolute dose for an arbitrary process thickness, and the datasheet gives no scaling formula, so treat it as a starting point and calibrate for your film. Exposure must be at 365 nm; no h-line (405 nm) dose is published.
SOURCE: Futurrex NR9-1500PY Technical Information — Properties, p.1
Do I change the bake for NR9-1500PY on glass or other poor thermal conductors?
Yes. The 150°C/60 s soft bake and 100°C/60 s PEB assume a good thermal conductor such as silicon or GaAs; on a poor thermal conductor such as glass the datasheet instructs multiplying the bake times by 3.5 — easy to miss when porting a silicon recipe to a transparent substrate.
SOURCE: Futurrex NR9-1500PY Technical Information — Processing steps 3 & 5, p.2
Sources & disclaimer
- Futurrex, Inc. — NR9-1500PY datasheet · accessed 2026-07-10
- https://nrf.aux.eng.ufl.edu/_files/msds/2/Resist%20Developer%20RD6.pdf — Futurrex's material safety data sheet for Resist Developer RD6 (dated 2009, hosted by the University of Florida Nanoscale Research Facility): gives the composition as 97-98 % water and 2-3 % tetramethylammonium hydroxide. The resist datasheet names RD6 but never states its chemistry.
- Karnati et al.. Micromachining on and of Transparent Polymers for Patterning Electrodes and Growing Electrically Active Cells for Biosensor Applications. Micromachines (2017). doi:10.3390/mi8080250NR9 lift-off gold MEAs on flexible PEN for biosensors
Manufacturer datasheet values are starting points; optimal parameters depend on your substrate, equipment and environment. Product names and trademarks belong to their respective owners. NANYTE is not affiliated with the manufacturers listed. Last updated 2026-07-26.