https://nanyte.com/photoresists/nr9-1000py · last updated 2026-10-15
- Manufacturer
- Futurrex, Inc.
- Tone
- negative
- Thickness
- 0.8–2 µm
- Exposure dose
- 390 mJ/cm² at 365 nm (per 1 µm film)
- Developer
- Resist Developer RD6
- Applications
- Lift-off
Cross-checked — the spin curve (where published) and the single-value figures were read twice, independently, from the datasheet, with any disagreement settled against it.
- Substrate
- Resist
- Exposed
Spin coating
Data points
| Series | rpm | µm |
|---|---|---|
| NR9-1000PY | 800 | 2.0 |
| 2000 | 1.2 | |
| 3000 | 1.0 | |
| 4000 | 0.86 | |
| 5000 | 0.75 |
Values are the manufacturer’s starting points, not a guarantee — characterize on your own tool.
numeric table 'Film thickness after 150°C hotplate bake for 60 s. / Coating spin speed, 40 s spin (rpm): (nm)', p.1 of Futurrex NR9-1000PY Technical Information. The datasheet prints each point as an nm range; each point here is the exact midpoint of that range, converted nm to µm. Printed ranges: 800 rpm = 1900-2100 nm, 2000 rpm = 1170-1290 nm, 3000 rpm = 950-1050 nm, 4000 rpm = 817-903 nm, 5000 rpm = 712-788 nm. The 3000 rpm midpoint (1000 nm) matches the '1000' in the product name.
- Spin for 40 s at the chosen speed; the table assumes a 150 °C, 60 s hotplate bake afterwards.
- Edge Bead Remover EBR2 is dispensed on both faces of the spinning substrate through nozzles 0.5–1.0 cm from the edge, starting as soon as the bead forms (3–5 s after the resist dispense stops) and ending 5 s before the spin cycle finishes.
- Bake times in the sheet are for substrates that conduct heat well (Si, GaAs); multiply them by 3.5 for poor conductors such as glass.
- Adhesion
- Not addressed in this datasheet.
Soft bake
- Soft bake
- 150 °C · 60 s · hotplate
- Notes
- For good thermal conductors (Si, GaAs); multiply bake times by 3.5 on poor conductors such as glass. No alternate schedule is printed for this grade.
SOURCE: Processing step 3, p.2; also the Properties heading, p.1 of Futurrex NR9-1000PY Technical Information
Exposure dose
The manufacturer publishes 390 mJ/cm² at 365 nm (per 1 µm film). Dose scales with film thickness and depends on your optics, so treat it as a starting point and run a dose array.
- Dose at 365 nm
- 390 mJ/cm² (per 1 µm film)
- Dose at 405 nm
- Not published — characterize on-tool
- As published
- 390 mJ/cm² at 365 nm is the only exposure figure Futurrex prints for this resist, quoted for a 1 µm film. There is no h-line number and no scaling rule for other thicknesses.
- Post-exposure bake
- 100 °C · 60 s
SOURCE: NR9-1000PY Technical Information
Properties, p.1 of Futurrex NR9-1000PY Technical Information: 'Sensitivity at 365 nm exposure wavelength (mJ/cm² for 1 µm thick film) 390'
Development
- Developer
- Resist Developer RD6
- Dilution
- RD6/water 3:1 to slow development (55 s for a 1 µm film)
- Time
- 10 s
- Method
- spray or immersion
- Rinse
- Deionized water rinse until water resistivity reaches the prescribed limit (Processing step 7).
- Developer family
- TMAH-based
SOURCE: Processing steps 6-7, p.2 of Futurrex NR9-1000PY Technical Information
Hard bake, etch & strip
- Stripper
- Resist Remover RR4 at 110 °C, or acetone (Processing step 9, p.2).
- Storage
- "Guaranteed shelf life at 25°C storage (years) 3" (Properties, p.1); "shelf life exceeding 3 years at room temperature storage" (Description, p.1).
Not published for this resist: Hard bake, Descum, Etch resistance — characterize on-tool.
Where it's used
Practical notes from the datasheet
NR9-1000PY is the thin end of Futurrex's NR9 negative line: a cyclohexanone-based resist, 19–23 % solids, exposed at 365 nm and developed in basic aqueous RD6. The sheet says the developed profile has a negative slope that suits lift-off, and that the amount of undercut can be adjusted through exposure energy. Product code and table agree: '1000' is the 3000 rpm point (950–1050 nm). Dose is 390 mJ/cm² for a 1 µm film, roughly twice the figure Futurrex prints for NR9-1500PY, so do not carry a dose across grades. The softbake is 150 °C for 60 s and the PEB is 100 °C for 60 s, both for silicon-like substrates; on glass the datasheet multiplies bake times by 3.5. Temperature resistance is quoted up to 100 °C, which matters if later steps run hot.
Troubleshooting
Common failure modes for NR9-1000PY, answered from the manufacturer's datasheet and application notes. These are starting points — your substrate, tooling and environment shift the specifics, so calibrate on-tool.
How do I adjust the lift-off undercut with NR9-1000PY?
The sheet lists easy adjustment of the undercut through exposure energy as an advantage of this resist. The developed sidewall slopes negatively, which is what makes lift-off simple. The flow is 150 °C/60 s softbake, 365 nm exposure, 100 °C/60 s PEB, RD6 develop, then strip in RR4 at 110 °C or acetone.
SOURCE: Futurrex NR9-1000PY Technical Information — Description, p.1, and Processing steps 3-9, p.2
How do I slow the NR9-1000PY develop down?
Neat RD6 clears a 1 µm film in about 10 s by spray or immersion. Mixing RD6 with water 3:1 stretches that to about 55 s for the same film, which gives a more controllable develop. Rinse in deionized water until the resistivity reaches your limit.
SOURCE: Futurrex NR9-1000PY Technical Information — Processing steps 6-7, p.2
Do the bake times change on glass substrates for NR9-1000PY?
Yes. The 150 °C softbake and 100 °C PEB are written for good thermal conductors such as silicon and GaAs. For poor conductors such as glass the sheet says to increase bake times by a factor of 3.5.
SOURCE: Futurrex NR9-1000PY Technical Information — Processing note, p.2
Sources & disclaimer
- Futurrex, Inc. — NR9-1000PY datasheet · accessed 2026-10-15
- https://nrf.aux.eng.ufl.edu/_files/msds/2/Resist%20Developer%20RD6.pdf — Futurrex's material safety data sheet for Resist Developer RD6 (dated 2009, hosted by the University of Florida Nanoscale Research Facility): gives the composition as 97-98 % water and 2-3 % tetramethylammonium hydroxide. The resist datasheet names RD6 but never states its chemistry.
Manufacturer datasheet values are starting points; optimal parameters depend on your substrate, equipment and environment. Product names and trademarks belong to their respective owners. NANYTE is not affiliated with the manufacturers listed. Last updated 2026-10-15.