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KemLab APOL-LO 3200 process recipe

A series of negative-tone, high-resolution lift-off photoresists (APOL-LO 3202, 3204, 3207) covering 2-10+ µm film thickness, developed in 0.26N TMAH for i-line and broadband exposure, with customizable lift-off undercut angle and photospeed.

https://nanyte.com/photoresists/apol-lo-3200 · last updated 2026-07-10

At a glance
Manufacturer
KemLab
Tone
negative
Thickness
2–10 µm
Developer
0.26N TMAH
Applications
Lift-off · General prototyping
Lift-offSuitable for

Human-verified — checked against the manufacturer's datasheet by a person.

01 / Coating

Spin coating

KemLab APOL-LO 3200 is spin-coated to 2–10 µm. The curve below is redrawn from the manufacturer's published data — read your target thickness off the vertical axis and take the matching spin speed as a starting point.

Spin curves for KemLab APOL-LO 3200: film thickness in µm against spin speed in rpm.0.005.01015201k2k3k4kSPIN SPEED (rpm)THICKNESS (µm)
Data points
KemLab APOL-LO 3200 — film thickness (µm) by spin speed (rpm)
Seriesrpmµm
APOL-LO 320210003.8
20002.7
30002.3
40001.9
APOL-LO 320410006.2
20004.5
30003.7
40003.2
APOL-LO 3207100010
20007.2
30005.7
40005.0

Values are the manufacturer's starting points, not a guarantee; verify on your own tool. Characterize on-tool. Series digitized from a published figure were independently cross-checked by a second blind read; treat those values as approximate (±10 %).

APOL-LO 3202: read from figure 'Spin Curve: APOL-LO 3200 Series', p.2 of APOL-LO 3200 TDS — identified by legend marker/color (blue diamonds = APOL-LO 3202) on the combined three-curve chart; bottom curve, consistent with the stated 2-4 µm range. The chart itself only plots 1000-4000 rpm (4 marked points per curve) — no 5000/6000 rpm points exist in the source to report.

APOL-LO 3204: read from figure 'Spin Curve: APOL-LO 3200 Series', p.2 of APOL-LO 3200 TDS — identified by legend marker/color (red squares = APOL-LO 3204) on the combined three-curve chart; middle curve, consistent with the stated 3-6 µm range. Chart plots only 1000-4000 rpm.

APOL-LO 3207: read from figure 'Spin Curve: APOL-LO 3200 Series', p.2 of APOL-LO 3200 TDS — identified by legend marker/color (purple triangles = APOL-LO 3207) on the combined three-curve chart; top curve, consistent with the stated 5-10+ µm range. Chart plots only 1000-4000 rpm.

3 series redrawn from the manufacturer's published data — hover to read values between points, click to pin.

Coat program includes a 5-10 second spread cycle; spin time at final speed is 45 seconds. Spin curves determined on 6-inch Si with static dispense of ~3 mL of photoresist (TDS p.2, Spin Coat) — note this is a smaller dispense volume than the ~4 mL used for KemLab's other series datasheets. No edge-bead-removal step is published.

Adhesion
HMDS recommended — APOL-LO adheres to gold, glass, aluminum, chromium and copper without a stated primer requirement; for silicon specifically, HMDS primer 'can increase adhesion' (TDS p.2, Substrate).
02 / Bake

Soft bake

Soft bake
110 °C · 60 s · hotplate
Notes
110°C for 60 seconds is the default softbake, stated both in the narrative Soft Bake section (p.2) and in three of four columns (2, 4, 6 µm) of the Lift-Off Process Guide table (p.2). The datasheet gives an explicit, clearly labeled exception: 'For films over 7 microns: Soft-bake on hotplate: 110°C for 90 seconds' — used for the 10 µm (APOL-LO 3207) process point in the same table.

SOURCE: Lift-Off Process Guide table and Soft Bake section, p.2 of APOL-LO 3200 TDS

03 / Exposure

Exposure dose

The manufacturer does not publish a clearing dose for KemLab APOL-LO 3200. Determine it with a dose array on your own tool.

As published
Broadband (Lift-Off Process Guide table header: 'Expose (broadband) on Si'); the narrative Exposure & Optical Parameters section states the resist is 'Sensitive at i-Line and broadband exposures' generally, but the quantified doses are all captioned broadband-on-Si.
Post-exposure bake
110 °C · 60 s

Not published for this resist: Dose at 365 nm, Dose at 405 nm — characterize on-tool.

04 / Development

Development

Developer
0.26N TMAH
Developer family
TMAH-based

Not published for this resist: Dilution, Time, Method, Rinse — characterize on-tool.

SOURCE: Lift-Off Process Guide table, p.2, and Develop section, p.3 of APOL-LO 3200 TDS

05 / Post-processing

Hard bake, etch & strip

Stripper
NMP, DMSO or similar solvent-based removers at 50-80°C (TDS p.3, Photoresist Removal). No two-bath-process guidance is given for this product (unlike the KL5300/KL6000/KL IR datasheets, which explicitly recommend one for thick films).
Storage
Store upright in tightly closed containers at 40-70°F (4-21°C), away from oxidizers, acids, bases and ignition sources (TDS p.3, Storage).

Not published for this resist: Hard bake, Descum, Etch resistance — characterize on-tool.

06 / Applications

Where it's used

Lift-offGeneral prototyping

APOL-LO 3200 is a series of three grades (APOL-LO 3202, 3204, 3207) explicitly engineered for a lift-off undercut profile, with customization offered to adjust the lift-off angle or photospeed. Unlike most conventional positive resists, PEB here is a required crosslinking step, not an optional one — the datasheet flags that PEB conditions 'can be changed to modify performance,' making it a tunable process lever rather than a fixed step. Softbake and PEB share one explicit thickness break point: films over 7 µm (i.e. the APOL-LO 3207 10 µm process point) get 90 s instead of 60 s at the same 110°C, while exposure dose and develop time scale continuously with thickness across all four demonstrated process points (2/4/6/10 µm). An n,k optical-dispersion curve (200-500 nm) is published for lithography simulation. As with any lift-off resist, the achieved undercut profile — not just critical dimension — should be verified on-tool, since it is the property this product is specifically sold on.

07 / Sources

Sources & disclaimer

  • KemLabKemLab APOL-LO 3200 datasheet (not stated — no revision or copyright date is printed anywhere in this TDS; the only certification mark present is an ISO 9001:2015 seal on the final page.) · accessed 2026-07-10

Manufacturer datasheet values are starting points; optimal parameters depend on your substrate, equipment and environment. Product names and trademarks belong to their respective owners. NANYTE is not affiliated with the manufacturers listed. Last updated 2026-07-10.

Cite this recipe

NANYTE. "KemLab APOL-LO 3200 process recipe." NANYTE Photoresist Library. https://nanyte.com/photoresists/apol-lo-3200. Accessed 2026-07-10.

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