https://nanyte.com/photoresists/dupont-wbr2000 · last updated 2026-10-15
- Manufacturer
- DuPont
- Tone
- negative
- Thickness
- 50–120 µm
- Developer
- Na2CO3 or K2CO3, 0.6-1.2 wt% (1.0 wt% preferred)
- Applications
- Electroplating / molding
Cross-checked — the spin curve (where published) and the single-value figures were read twice, independently, from the datasheet, with any disagreement settled against it.
- Substrate
- Resist
- Exposed
Coating — dry-film lamination
WBR 2000 is supplied as a pre-cut dry-film sheet and applied by hot-roll lamination — it is not spin-coated. Thickness is fixed per sheet, 50–120 µm, selected by sheet rather than by spin speed.
- WBR is hot-roll laminated, not spin-coated, so thickness is fixed by the sheet.
- Hot roll laminator conditions: roll 85-110 °C (95 °C preferred), speed 0.6-1.5 m/min (1.2 m/min preferred), pressure 15-40 psig
- for an automatic laminator the sheet refers you to the equipment maker and DuPont.
- If the film wrinkles, reduce roll pressure and/or temperature, particularly if the laminator is not well aligned.
- Let wafers cool to room temperature before exposure and before further processing, and never stack substrates horizontally, which imprints random defects.
- Expose within 3 days of lamination.
- The polyester cover sheet stays on for exposure and must be removed before development.
- Adhesion
- No adhesion promoter is named. The surface must be free of organic contamination and metal oxides; where possible clean with a light 2-3 % sulfuric acid solution, rinse in DI water and dry with nitrogen, immediately before lamination. Listed compatible surfaces are silicon, silicon nitride, sputtered copper, sputtered gold and PI/BCB with UBM. An optional post-lamination bake is offered for extra-smooth surfaces and aggressive applications.
Soft bake
- Soft bake
- Not published — characterize on-tool
- Notes
- No soft bake. The only bake before exposure is the optional post-lamination bake to promote adhesion: oven 55-75 °C (65 °C preferred) for 15-20 min (20 min preferred). The sheet gives no hotplate option for this step and notes that the temperature varies with film thickness, substrate and process.
SOURCE: Part 4 'Post-Lamination Bake (Optional)', p.2 of the DuPont WBR 2000 Series data sheet
Exposure dose
WBR 2000's dose is published per sheet thickness, not as a single number. Read the row for the sheet you laminate and run a dose array around it.
- As published
- Dose follows the sheet: 220-460 mJ/cm² for the 50 µm film, 250-500 for 100 µm and 260-520 for 120 µm, with the high end for aggressive plating and for high-temperature reflow.
| Sheet | Dose |
|---|---|
| 50 µm | 220–460 mJ/cm² |
| 75 µm | 240–480 mJ/cm² |
| 100 µm | 250–500 mJ/cm² |
| 120 µm | 260–520 mJ/cm² |
SOURCE: 'Recommended Exposure Range' table (mJ/cm2), Part 5, p.2 of…
'Recommended Exposure Range' table (mJ/cm2), Part 5, p.2 of the DuPont WBR 2000 Series data sheet: WBR2050 220-460, WBR2075 240-480, WBR2100 250-500, WBR2120 260-520. The table carries no wavelength label; the text says the film has peak absorption at 365 nm and i-line lamps are highly recommended, and that all energies were measured at the film surface with an IL-1400A radiometer and SSD001A probe (275-400 nm sensitivity), p.3.
Development
- Developer
- Na2CO3 or K2CO3, 0.6-1.2 wt% (1.0 wt% preferred)
- Method
- spray (conditions given for developers with non-stationary spray nozzles)
- Rinse
- Remove the polyester cover sheet before developing. Rinse right after development with hard water (150-300 ppm CaCO3 equivalent, hardened with magnesium sulfate if needed) at 21-25 °C and 1.4-2.4 bar, with the develop-to-rinse dwell ratio at least 2:1; then spin dry at 2500-3500 rpm (3000 rpm preferred) for 20-40 s with nitrogen. Keep white-light exposure to a minimum while wafers wait after development.
- Developer family
- Buffered alkaline
Not published for this resist: Dilution, Time — characterize on-tool.
SOURCE: Part 7 'Development', Rinsing and Drying Recommendations, p.3 of the DuPont WBR 2000 Series data sheet
Hard bake, etch & strip
- Descum
- Plasma etching (ashing) is recommended to clear organic residue and improve wetting before electroplating. Reference parameters from the sheet: O2 at 250 sccm (printed as 'SCLL'), 250 W, 500 mTorr, 30 s dwell, offered for reference only.
- Stripper
- Stripper named as successfully used: EKC 108 (EKC Technology), at 50-85 °C (125-185 °F). The sheet says proprietary chemistries give faster removal and higher film loading and reduce attack on surface metallurgy. Total removal time depends on exposure dose, bake cycle and hold times.
- Storage
- Store at 5-21 °C (40-70 °F) and 40-60 % relative humidity. Protect the film through lamination and development from UV and visible light up to 450 nm using gold fluorescent safe lights; high-intensity yellow light (above 75 foot-candles) can change photospeed over time and should be avoided. No shelf life is printed.
Not published for this resist: Hard bake, Etch resistance — characterize on-tool.
SOURCE: Part 8 'Post-Development Bake (Optional)', pp.3-4 of the DuPont WBR 2000 Series data sheet
Where it's used
Practical notes from the datasheet
WBR 2000 is a 50-120 µm laminated film aimed at in-via and mushroom electroplating for wafer bumping and copper pillars; the sheet also lists photo-stencil use. The sheet lists plating in acid copper, tin/lead and tin, and says it is also compatible with nickel sulfamate, most lead-free electrolytes and acid gold baths under controlled conditions, with strong resistance to lifting and underplating (contact DuPont for details). Heat resistance is listed as a feature, and the exposure note says higher dose is required for high-temperature steps such as high-lead paste reflow. The develop table is split by wafer size and grade, and the 120 µm film on a 300 mm wafer takes up to 6 min in total. Allow no more than 3 days between lamination and exposure.
Troubleshooting
Common failure modes for WBR 2000, answered from the manufacturer's datasheet and application notes. These are starting points — your substrate, tooling and environment shift the specifics, so calibrate on-tool.
The film wrinkles during lamination. What does DuPont suggest?
Reduce the laminating roll pressure and/or temperature, especially if the laminator is not correctly aligned. The stated window is 85-110 °C and 15-40 psig at 0.6-1.5 m/min. Let wafers cool before the next step, and never stack substrates horizontally, which leaves random impression defects.
SOURCE: DuPont WBR 2000 Series data sheet DS06-118 Rev. 2.0 (08/07) - Part 2 'Lamination' notes, p.2
Why is the develop time so much longer for the 300 mm wafer?
The develop table is split by wafer size as well as by sheet. At 28 °C and 2 bar, the 120 µm sheet reaches clean in 144 s on a 200 mm wafer and 180 s on a 300 mm wafer, and the total develop time is 240-288 s against 280-360 s. For 200 mm and larger wafers the sheet suggests giving 30 % of the time to the wafer edges alone and 70 % to the whole surface, and adding 50-60 % beyond the clean point.
SOURCE: DuPont WBR 2000 Series data sheet DS06-118 Rev. 2.0 (08/07) -…
DuPont WBR 2000 Series data sheet DS06-118 Rev. 2.0 (08/07) - Part 7 'Development', Total Development Time table and notes, p.3
Sources & disclaimer
- DuPont — WBR 2000 datasheet (DS06-118 Rev. 2.0 (08/07) printed in the page footers (read as August 2007); the PDF's embedded title is 'WBR Preliminary 0606'. No other date is printed on the pages.) · accessed 2026-10-15
- https://microresist.de/produkt/wbr-2000-series/ — distributor product page
Manufacturer datasheet values are starting points; optimal parameters depend on your substrate, equipment and environment. Product names and trademarks belong to their respective owners. NANYTE is not affiliated with the manufacturers listed. Last updated 2026-10-15.