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ma-P 1240G process recipe

ma-P 1240G sits between ma-P 1225G and ma-P 1275G in micro resist technology's greyscale positive series, coating 4.0 µm at 3000 rpm for 30 s, and is exposed anywhere from 350 to 450 nm for 3D relief work in micro-optics, MEMS and displays.

https://nanyte.com/photoresists/ma-p-1240g · last updated 2026-09-10

At a glance
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Manufacturer
micro resist technology GmbH
Tone
positive
Chemistry
DNQ-novolak
Thickness
4 µm
Applications
Grayscale / 3D · MEMS structural · Electroplating / molding · Etch mask
The exposed resist dissolves in the developer; the unexposed film stays. Schematic cross-sections for ma-P 1240G — feature width, film aspect ratio and sidewall angle are illustrative, not to scale.
01 / Coating

Spin coating

The manufacturer does not publish a spin curve for ma-P 1240G.

  • One tabulated point, not a sweep: the 'Film thickness' table gives ma-P 1240G as 4.0 µm at 3000 rpm for 30 s, and a single anchor is not a curve.
  • The sheet does plot 'Film tickness [µm]' against 'Spin speed [rpm]' from 1000 to 6000 rpm with a 30 s trace for each of 1215G, 1225G, 1240G and 1275G, so the shape of this grade's response is shown — but that chart carries no numeric table, only axis ticks on a 0-25 µm scale and the legend strings, and a 4 µm trace sits low enough on that scale that reading values off it would be guesswork.
  • The tabulated point is the only thickness figure with a number attached.
  • Accel, dispense volume and edge-bead removal are not published.
Adhesion
HMDS not required — Not addressed in this product-information sheet.
02 / Bake

Soft bake

Soft bake
Not published — characterize on-tool
03 / Exposure

Exposure dose

The sheet gives a 350-450 nm sensitivity window but publishes no dose at any wavelength for this grade — the wavelengths that appear are the tools used for the example images, not a specification. Determine clearing dose on-tool. Run a dose array on your own tool to land the working dose.

Not published for this resist: Dose at 365 nm, Dose at 405 nm — characterize on-tool.

04 / Development

Development

Developer family
TMAH or buffered alkaline

Not published for this resist: Developer, Dilution, Time, Method, Rinse — characterize on-tool.

SOURCE: Characteristics, p.1

05 / Post-processing

Hard bake, etch & strip

Etch resistance
"Suitable for dry etch processes e.g. with CHF3, CF4, SF6" (Characteristics, p.1).

Not published for this resist: Hard bake, Descum, Stripper, Storage — characterize on-tool.

06 / Applications

Where it's used

Grayscale: The sheet sells the whole 1200G series for greyscale work: 'Positive tone photoresist series specifically designed for the requirements of greyscale lithography', with 'Reduced contrast' listed first among its characteristics and 50-60 µm pattern depths quoted for the series. 'An application in standard binary lithography is also possible.' No dose-vs-remaining-thickness curve is printed, so the shape of that contrast response is not characterised for this grade.

Practical notes from the datasheet

ma-P 1240G is the grade micro resist technology added between 1225G and 1275G in its greyscale positive line; the 2024 revision of the series sheet is the first to tabulate it. At 3000 rpm for 30 s it coats 4.0 µm, which puts it in reach of relief depths that the thinner 1215G and 1225G cannot hold while avoiding the long, slow spins the 1275G grade needs for its thicker films. Greyscale lithography asks the resist to convert a modulated dose into a continuous depth, so the series is formulated for reduced contrast; the sheet claims 50-60 µm pattern depths for the series as a whole, but prints no dose-vs-depth curve, so the linearity of that response has to be measured on the tool that will write it. Exposure is specified only as a 350-450 nm window, which spans the 405 nm line most direct-write tools use. No softbake, PEB, hardbake, developer product or dose is published for this grade — it is a product-information sheet, not a process datasheet.

07 / Family

Grades in this family

Other grades in the ma-P 1200G series line differ mainly in coating thickness:

ma-P 1200G series — grade comparison
GradeThickness
ma-P 1240G (this page)4 µm
ma-P 1275G9.5–60 µm
08 / Sources

Sources & disclaimer

Manufacturer datasheet values are starting points; optimal parameters depend on your substrate, equipment and environment. Product names and trademarks belong to their respective owners. NANYTE is not affiliated with the manufacturers listed. Last updated 2026-09-10.

Cite this recipe

NANYTE. "ma-P 1240G process recipe." NANYTE Photoresist Library. https://nanyte.com/photoresists/ma-p-1240g. Accessed 2026-09-10.

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