Skip to content

ma-P 1275G process recipe

ma-P 1275G is the thickest grade in micro resist technology's ma-P 1200G positive-tone greyscale photoresist series, coating from roughly 9.3 to 60 µm and used for 3D micro-optic, MEMS/MOEMS and display structures written by dose-modulated laser direct writing or a greyscale mask.

https://nanyte.com/photoresists/ma-p-1275g · last updated 2026-07-26

At a glance
Download PDF
Manufacturer
micro resist technology GmbH
Tone
positive
Chemistry
DNQ-novolak
Thickness
9.3–60 µm
Applications
Grayscale / 3D · MEMS structural · Electroplating / molding · Etch mask
The exposed resist dissolves in the developer; the unexposed film stays. Schematic cross-sections for ma-P 1275G — feature width, film aspect ratio and sidewall angle are illustrative, not to scale.
01 / Coating

Spin coating

The manufacturer does not publish a spin curve for ma-P 1275G.

  • No spin curve is published here.
  • The per-grade film-thickness table for ma-P 1275G gives four (rpm, time, thickness) triples — 3000 rpm/30 s→9.3 µm, 1500 rpm/30 s→15 µm, 500 rpm/60 s→30 µm, 1000 rpm/4 s→60 µm — but spin TIME differs across the four points (30/30/60/4 s), so they are four discrete target-thickness recipes, not points on one continuous rpm-only spin curve; sorted by rpm alone the thickness rises from 500→1000 rpm (30→60 µm) before falling again at 1500 and 3000 rpm, which would fail a monotonic-curve sanity check and misrepresent the data as a single spin curve.
  • A separate figure ('Film thickness [µm] vs Spin speed [rpm]', 1000–6000 rpm, 0–25 µm axis) plots ma-P 1275G, 1225G and 1215G together at a FIXED 30 s spin time, which is a genuine spin curve for this grade, but that 30 s curve's y-axis (max 25 µm) does not reach the 60 µm value from the table, so it evidently covers a different/narrower thickness regime than the table's 4-14 s recipes.
  • The table and the figure therefore describe different regimes, and neither is a clean rpm-only sweep, so no spin curve is published for this grade.
Adhesion
HMDS not required — Not addressed in this product-information sheet.
02 / Bake

Soft bake

Soft bake
Not published — characterize on-tool
03 / Exposure

Exposure dose

The ma-P 1200G grades get a 350 to 450 nm sensitivity window and nothing else — the demo patterns were written at 355, 390 and 405 nm, but no dose in mJ/cm² is printed for any of them. Run a dose array on your own tool to land the working dose.

Not published for this resist: Dose at 365 nm, Dose at 405 nm — characterize on-tool.

04 / Development

Development

Developer family
TMAH or buffered alkaline

Not published for this resist: Developer, Dilution, Time, Method, Rinse — characterize on-tool.

SOURCE: Characteristics, p.1

05 / Post-processing

Hard bake, etch & strip

Etch resistance
"Suitable for dry etch processes e.g. with CHF3, CF4, SF6" (Characteristics, p.1).

Not published for this resist: Hard bake, Descum, Stripper, Storage — characterize on-tool.

06 / Applications

Where it's used

Grayscale: Document markets the series explicitly for greyscale lithography: 'Positive tone photoresist series specifically designed for the requirements of greyscale lithography... Reduced contrast... Film thickness up to 60 µm and higher... 50 - 60 µm depth range of the patterns possible in greyscale lithography.' The ma-P 1275G example figure shows '~53 µm pattern depth in ~58 µm thick ma-P 1275G'. Also states 'An application in standard binary lithography is also possible.'

Practical notes from the datasheet

ma-P 1275G is the thickest grade of micro resist technology's ma-P 1200G positive-tone greyscale series, rated by the manufacturer for coatings from roughly 9.3 to 60 µm depending on spin speed and time. Greyscale (analog) lithography needs a resist whose exposed thickness responds smoothly to dose so a continuous 3D relief can be written by a modulated laser or a grey-level mask; the datasheet markets the series as having 'reduced contrast' and states 50-60 µm pattern depths are achievable, but it does not publish a dose-vs-remaining-thickness (contrast) curve, so the actual linearity of that dose response is not characterized here and must be measured on-tool. The four film-thickness/spin-speed pairs the datasheet lists for this grade each use a different spin time (30 s, 30 s, 60 s and 4 s), so they describe four discrete target-thickness recipes rather than points on one continuous spin curve, and no spin curve is published for this grade. No softbake, PEB, hardbake, developer product name, or dose values are given in this flyer-style product-information sheet; a full technical datasheet would be needed to fill those in. Chemistry classified as dnq-novolak from microresist.de's ma-P 1200G series page, the greyscale variant of the same DNQ/novolak ma-P family.

07 / Sources

Sources & disclaimer

Research using this resist
  1. Borghi et al.. Rapid prototyping of 3D microstructures: A simplified grayscale lithography encoding method using blender. Micro and Nano Engineering (2025). doi:10.1016/j.mne.2024.100294
    Encodes 3D models as grayscale masks in Blender and writes them into a 30 um ma-P 1275G film (450 rpm for 60 s; 100 C for 10 min; 2 h rehydration) on a DMD maskless projection system, developing in mr-D 526/S to reproduce stairs, ramps and sinusoidal reliefs.
  2. Guastella et al.. Directional Fluidity of Dense Emulsion Activated by Transverse Wedge-Shaped Microroughness. Micromachines (2025). doi:10.3390/mi16030335
    Textures one microfluidic channel wall with wedge-shaped grooves written into ma-P 1275G on a Heidelberg tabletop micro maskless aligner (365 nm LED, spatial light modulator), then measures how the resulting height gradient biases dense-emulsion flow.

Manufacturer datasheet values are starting points; optimal parameters depend on your substrate, equipment and environment. Product names and trademarks belong to their respective owners. NANYTE is not affiliated with the manufacturers listed. Last updated 2026-07-26.

Cite this recipe

NANYTE. "ma-P 1275G process recipe." NANYTE Photoresist Library. https://nanyte.com/photoresists/ma-p-1275g. Accessed 2026-07-26.

Ready to run this process on your own tool?Talk to an engineer →

Expose it at 365 and 405 nm

NANYTE BEAM is a desktop maskless lithography system with software-selectable dual-wavelength exposure and 16-bit grayscale — no photomask, no mask cost, same-day iteration.

What is NANYTE BEAM?

Improve this recipe

Run this resist in your lab? Send us what actually works, or flag a value that's wrong. No account, no email needed — a handle and affiliation are optional and become your credit line. Every contribution is checked against published sources before it appears.