https://nanyte.com/photoresists/ma-p-1275g · last updated 2026-09-28
- Manufacturer
- micro resist technology GmbH
- Tone
- positive
- Chemistry
- DNQ-novolak
- Thickness
- 9.5–60 µm
- Applications
- Grayscale / 3D · MEMS structural · Electroplating / molding · Etch mask
- Substrate
- Resist
- Exposed
Spin coating
The manufacturer does not publish a spin curve for ma-P 1275G.
- The ma-P 1200G sheet gives ma-P 1275G four coating recipes, each with its own spin time: 9.5 µm at 3000 rpm for 30 s, 15 µm at 1500 rpm for 30 s, 30 µm at 500 rpm for 60 s and 60 µm at 1000 rpm for 4 s.
- Because the time changes from row to row, these are four separate targets rather than points on one curve; the 60 µm coat comes from a 4 s spin at 1000 rpm, not from a slower speed.
- The sheet's film-thickness chart separately plots ma-P 1275G, 1240G, 1225G and 1215G against spin speed from 1000 to 6000 rpm at a fixed 30 s spin time, on a 0-25 µm axis.
- At that spin time 1275G starts at about 20 µm at 1000 rpm, so the 30 µm and 60 µm coats come only from the table's 500 rpm / 60 s and 1000 rpm / 4 s recipes.
- Adhesion
- Not addressed in this product-information sheet.
Soft bake
- Soft bake
- Not published — characterize on-tool
Exposure dose
The ma-P 1200G grades get a 350 to 450 nm sensitivity window and nothing else — the demo patterns were written at 355, 390 and 405 nm, but no dose in mJ/cm² is printed for any of them. Run a dose array on your own tool to land the working dose.
Not published for this resist: Dose at 365 nm, Dose at 405 nm — characterize on-tool.
Development
- Developer family
- TMAH or buffered alkaline
Not published for this resist: Developer, Dilution, Time, Method, Rinse — characterize on-tool.
SOURCE: Characteristics, p.1
Hard bake, etch & strip
- Etch resistance
- "Suitable for dry etch processes e.g. with CHF3, CF4, SF6" (Characteristics, p.1).
Not published for this resist: Hard bake, Descum, Stripper, Storage — characterize on-tool.
Where it's used
Grayscale: Document markets the series explicitly for greyscale lithography: 'Positive tone photoresist series specifically designed for the requirements of greyscale lithography... Reduced contrast... Film thickness up to 60 µm and higher... 50 - 60 µm depth range of the patterns possible in greyscale lithography.' The ma-P 1275G example figure shows '~53 µm pattern depth in ~58 µm thick ma-P 1275G'. Also states 'An application in standard binary lithography is also possible.'
Practical notes from the datasheet
ma-P 1275G is the thickest grade of micro resist technology's ma-P 1200G positive-tone greyscale series, rated by the manufacturer for coatings from roughly 9.5 to 60 µm depending on spin speed and time. Greyscale (analog) lithography needs a resist whose exposed thickness responds smoothly to dose so a continuous 3D relief can be written by a modulated laser or a grey-level mask; the datasheet markets the series as having 'reduced contrast' and states 50-60 µm pattern depths are achievable, but it does not publish a dose-vs-remaining-thickness (contrast) curve, so the actual linearity of that dose response is not characterized here and must be measured on-tool. The four film-thickness/spin-speed pairs the datasheet lists for this grade each use a different spin time (30 s, 30 s, 60 s and 4 s), so they describe four discrete target-thickness recipes rather than points on one continuous spin curve, and no spin curve is published for this grade. No softbake, PEB, hardbake, developer product name, or dose values are given in this flyer-style product-information sheet; a full technical datasheet would be needed to fill those in. The dnq-novolak chemistry entry draws on microresist.de's ma-P 1200G series page, the greyscale variant of the same DNQ/novolak ma-P family.
Grades in this family
Other grades in the ma-P 1200G series line differ mainly in coating thickness:
| Grade | Thickness |
|---|---|
| ma-P 1240G | 4 µm |
| ma-P 1275G (this page) | 9.5–60 µm |
Troubleshooting
Common failure modes for ma-P 1275G, answered from the manufacturer's datasheet and application notes. These are starting points — your substrate, tooling and environment shift the specifics, so calibrate on-tool.
The ma-P 1275G table lists 60 µm at 1000 rpm but 30 µm at 500 rpm. Is that a misprint?
Read the time row: 60 µm is a 4 s spin at 1000 rpm, while 30 µm is 500 rpm for 60 s, 15 µm is 1500 rpm for 30 s and 9.5 µm is 3000 rpm for 30 s. The 60 µm coat comes from a very short spin, not a slower one, so the four entries are separate recipes and cannot be joined into one speed curve or interpolated. The sheet's spin chart covers only 30 s spins and tops out at 25 µm. Pick the row nearest your target thickness and confirm it on your own coater.
SOURCE: micro resist technology 'ma-P 1200G — Positive Greyscale…
micro resist technology 'ma-P 1200G — Positive Greyscale Photoresist' product sheet (hm24.03.18) — Film thickness table and film thickness vs spin speed chart (30 s spin time), p.1
How long should a 30–60 µm ma-P 1275G film wait after the softbake before I write it?
Hours, not minutes. MicroChemicals' trouble shooter says a DNQ positive resist has to take water back from the air after the softbake to develop at a reasonable rate, and that the time grows from about a minute at 1 µm to several hours beyond 30 µm, because the water has to reach the resist all the way down to the substrate. Keep the humidity steady at 40–50 % during the wait. The ma-P 1200G sheet publishes no softbake or hold time of its own.
SOURCE: MicroChemicals GmbH 'Photolithography Trouble Shooter'…
MicroChemicals GmbH 'Photolithography Trouble Shooter' application note — Development: Insufficient Development Rate, Sufficient Rehydration?, p.6; micro resist technology ma-P 1200G sheet (hm24.03.18) — Film thickness table, p.1
My deep ma-P 1275G reliefs come out shallower on later wafers in the same developer bath. Why?
MicroChemicals' trouble shooter says the developer is exhausted by the resist it dissolves: as a rule of thumb, about one part per thousand of dissolved resist already reduces the development rate significantly. A deep greyscale relief in a 30–60 µm ma-P 1275G film removes far more resist per wafer than a thin binary job, so a bath that looks fine can drift over a run. An open bath also loses strength to CO2 from the air. Use fresh developer or a fixed volume per wafer. The ma-P sheet specifies TMAH-based developers for greyscale work.
SOURCE: MicroChemicals GmbH 'Photolithography Trouble Shooter' —…
MicroChemicals GmbH 'Photolithography Trouble Shooter' — Expired Developer? (exhaustion by developed resist; neutralisation by CO2), p.7; micro resist technology ma-P 1200G sheet (hm24.03.18) — Characteristics and Film thickness table, p.1
I can't get my ma-P 1275G relief down to the full film thickness. Is that normal?
Partly. The sheet's own deep example is about 53 µm of pattern depth in about 58 µm of ma-P 1275G, written with a µPG301 at 390 nm, and it claims a 50–60 µm depth range for the series — full-thickness clearance is not what it shows. Beyond that, MicroChemicals' trouble shooter notes that underexposure in a thick film develops normally to some depth and then almost stops. No dose is published for any 1200G grade, only a 350–450 nm sensitivity window, so map grey level to depth on your own writer with a calibration pattern before a production run.
SOURCE: micro resist technology 'ma-P 1200G — Positive Greyscale…
micro resist technology 'ma-P 1200G — Positive Greyscale Photoresist' product sheet (hm24.03.18) — Characteristics and ma-P 1275G example caption ('~53 µm pattern depth in ~58 µm thick ma-P 1275G', µPG301 at 390 nm), p.1; MicroChemicals GmbH 'Photolithography Trouble Shooter' — Sufficient Exposure Dose (thick resist films), p.7
Sources & disclaimer
- micro resist technology GmbH — ma-P 1275G datasheet (hm24.03.18) · accessed 2026-09-10
- https://microresist.de/en/produkt/ma-p-1200g-series/ — microresist.de's ma-P 1200G series page (greyscale variant of the same DNQ/novolak family as ma-P 1200); the basis for classifying ma-P 1275G as dnq-novolak.
- Borghi et al.. Rapid prototyping of 3D microstructures: A simplified grayscale lithography encoding method using blender. Micro and Nano Engineering (2025). doi:10.1016/j.mne.2024.100294Encodes 3D models as grayscale masks in Blender and writes them into a 30 um ma-P 1275G film (450 rpm for 60 s; 100 C for 10 min; 2 h rehydration) on a DMD maskless projection system, developing in mr-D 526/S to reproduce stairs, ramps and sinusoidal reliefs.
- Guastella et al.. Directional Fluidity of Dense Emulsion Activated by Transverse Wedge-Shaped Microroughness. Micromachines (2025). doi:10.3390/mi16030335Textures one microfluidic channel wall with wedge-shaped grooves written into ma-P 1275G on a Heidelberg tabletop micro maskless aligner (365 nm LED, spatial light modulator), then measures how the resulting height gradient biases dense-emulsion flow.
Manufacturer datasheet values are starting points; optimal parameters depend on your substrate, equipment and environment. Product names and trademarks belong to their respective owners. NANYTE is not affiliated with the manufacturers listed. Last updated 2026-09-28.