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ma-P 1275G process recipe

ma-P 1275G is the thickest grade in micro resist technology's ma-P 1200G positive-tone greyscale photoresist series, coating from roughly 9.3 to 60 µm and used for 3D micro-optic, MEMS/MOEMS and display structures written by dose-modulated laser direct writing or a greyscale mask.

https://nanyte.com/photoresists/ma-p-1275g · last updated 2026-07-12

At a glance
Manufacturer
micro resist technology GmbH
Tone
positive
Chemistry
DNQ-novolak
Thickness
9.3–60 µm
Applications
Grayscale / 3D · MEMS structural · Electroplating / molding · Etch mask
Etch maskSuitable forGrayscale / 3DSuitable for

Unverified — not yet human-checked; values transcribed from the datasheet, characterize on-tool.

01 / Coating

Spin coating

The manufacturer does not publish a spin curve for ma-P 1275G. No spin curve is published here. The per-grade film-thickness table for ma-P 1275G gives four (rpm, time, thickness) triples — 3000 rpm/30 s→9.3 µm, 1500 rpm/30 s→15 µm, 500 rpm/60 s→30 µm, 1000 rpm/4 s→60 µm — but spin TIME differs across the four points (30/30/60/4 s), so they are four discrete target-thickness recipes, not points on one continuous rpm-only spin curve; sorted by rpm alone the thickness rises from 500→1000 rpm (30→60 µm) before falling again at 1500 and 3000 rpm, which would fail a monotonic-curve sanity check and misrepresent the data as a single spin curve. A separate figure ('Film thickness [µm] vs Spin speed [rpm]', 1000–6000 rpm, 0–25 µm axis) plots ma-P 1275G, 1225G and 1215G together at a FIXED 30 s spin time, which is a genuine spin curve for this grade, but that 30 s curve's y-axis (max 25 µm) does not reach the 60 µm value from the table, so it evidently covers a different/narrower thickness regime than the table's 4-14 s recipes. Given the risk of misreading a multi-grade figure (flagged explicitly for this project) and the confound between the table and the figure, no curve is published; a human QC reviewer should read the figure directly against the source PDF, p.1.

Adhesion
HMDS not required — Not addressed in this product-information sheet.
02 / Bake

Soft bake

Soft bake
Not published — characterize on-tool
03 / Exposure

Exposure dose

The manufacturer does not publish a clearing dose for ma-P 1275G. Determine it with a dose array on your own tool.

As published
'Spectral sensitivity 350…450 nm' (Characteristics, p.1); example SEM captions cite tool wavelengths of 390 nm (µPG301), 405 nm (DWL66+) and 355 nm (VPG400), but these are exposure-TOOL wavelengths for demo patterns, not a published dose.

Not published for this resist: Dose at 365 nm, Dose at 405 nm — characterize on-tool.

04 / Development

Development

Developer family
TMAH-based

Not published for this resist: Developer, Dilution, Time, Method, Rinse — characterize on-tool.

SOURCE: Characteristics, p.1

05 / Post-processing

Hard bake, etch & strip

Etch resistance
"Suitable for dry etch processes e.g. with CHF3, CF4, SF6" (Characteristics, p.1).

Not published for this resist: Hard bake, Descum, Stripper, Storage — characterize on-tool.

06 / Applications

Where it's used

Grayscale / 3DMEMS structuralElectroplating / moldingEtch mask

ma-P 1275G is the thickest grade of micro resist technology's ma-P 1200G positive-tone greyscale series, rated by the manufacturer for coatings from roughly 9.3 to 60 µm depending on spin speed and time. Greyscale (analog) lithography needs a resist whose exposed thickness responds smoothly to dose so a continuous 3D relief can be written by a modulated laser or a grey-level mask; the datasheet markets the series as having 'reduced contrast' and states 50-60 µm pattern depths are achievable, but it does not publish a dose-vs-remaining-thickness (contrast) curve, so the actual linearity of that dose response is not characterized here and must be measured on-tool. The four film-thickness/spin-speed pairs the datasheet lists for this grade each use a different spin time (30 s, 30 s, 60 s and 4 s), so they describe four discrete target-thickness recipes rather than points on one continuous spin curve — see spinNotes for why no curve is published. No softbake, PEB, hardbake, developer product name, or dose values are given in this flyer-style product-information sheet; a full technical datasheet would be needed to fill those in. Chemistry classified as dnq-novolak from microresist.de's ma-P 1200G series page, the greyscale variant of the same DNQ/novolak ma-P family (chemistry classified 2026-07-12 from manufacturer SDS/TDS).

Grayscale: Document markets the series explicitly for greyscale lithography: 'Positive tone photoresist series specifically designed for the requirements of greyscale lithography... Reduced contrast... Film thickness up to 60 µm and higher... 50 - 60 µm depth range of the patterns possible in greyscale lithography.' The ma-P 1275G example figure shows '~53 µm pattern depth in ~58 µm thick ma-P 1275G'. Also states 'An application in standard binary lithography is also possible.'

07 / Sources

Sources & disclaimer

Manufacturer datasheet values are starting points; optimal parameters depend on your substrate, equipment and environment. Product names and trademarks belong to their respective owners. NANYTE is not affiliated with the manufacturers listed. Last updated 2026-07-12.

Cite this recipe

NANYTE. "ma-P 1275G process recipe." NANYTE Photoresist Library. https://nanyte.com/photoresists/ma-p-1275g. Accessed 2026-07-12.

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