https://nanyte.com/photoresists/ar-n-4340 · last updated 2026-07-12
- Manufacturer
- Allresist
- Tone
- negative
- Chemistry
- Chemically amplified
- Thickness
- 1.4–2 µm
- Exposure dose
- 140 mJ/cm²
- Developer
- AR 300-475
- Applications
- Etch mask · Lift-off
Human-verified — checked against the manufacturer's datasheet by a person.
Spin coating
AR-N 4340 is spin-coated to 1.4–2 µm. The curve below is redrawn from the manufacturer's published data — read your target thickness off the vertical axis and take the matching spin speed as a starting point.
Data points
| Series | rpm | µm |
|---|---|---|
| AR-N 4340 | 500 | 4.2 |
| 1000 | 3.0 | |
| 2000 | 2.1 | |
| 3000 | 1.7 | |
| 4000 | 1.5 | |
| 5000 | 1.3 | |
| 6000 | 1.2 |
Values are the manufacturer's starting points, not a guarantee; verify on your own tool. Characterize on-tool. Series digitized from a published figure were independently cross-checked by a second blind read; treat those values as approximate (±10 %).
read from figure, 'Spin curve' (D₀/µm 0.0–5.0 vs rpm 0–8000), p.50 of Allresist AR-N 4300 product-information sheet (as of January 2014); single-grade chart, one legended trace labeled 'AR-N 4340' — no curve-identification ambiguity (unlike the AR-U 4000 series page); 7 diamond markers digitized at rpm 500/1000/2000/3000/4000/5000/6000 (the fitted line continues unmarked to 8000 rpm at ~1.05 µm but that tail was not digitized as a point, since it carries no discrete marker); anchor check: the figure's 4000 rpm marker reads ≈1.47 µm, about 5% above the Properties I table's printed anchor 'Film thickness/4000 rpm (µm): 1.4' (p.50, cross-referenced by the Coating box, p.51: '4000 rpm, 60 s, 1.4 µm') — the table value is the more authoritative single number, the figure read is close but not exact; digitized 2026-07-12
Spin-speed-vs-thickness figure ('Spin curve', p.50, axes D₀/µm 0-5.0 vs rpm 0-8000) digitized 2026-07-12: single-grade chart, one legended AR-N 4340 trace with 7 diamond markers from 500-6000 rpm, anchored against the Properties I table's 4000 rpm -> 1.4 µm reference point (the figure's own 4000 rpm marker reads ≈1.47 µm, a ~5% deviation from the table value — both are recorded, see spinCurves[0].source). No dispense volume, acceleration ramp, or edge-bead-removal step is described anywhere in this document.
- Adhesion
Soft bake
- Soft bake
- 90 °C · 60 s · hotplate
- Notes
SOURCE: Process conditions diagram, p.51; Process parameters table, p.50
Exposure dose
The manufacturer publishes 140 mJ/cm² ('UV exposure: Broadband UV, 365 nm, 405 nm, 436 nm. Exposure dose (E0, broadband UV stepper): 140 mJ/cm², 1.4 µm' (Process conditions diagram, p.51). Separately, Characteristics (p.50) lists spectral sensitivity as 'i-line, g-line', and the Process parameters table (p.50) states 'Exposure: i-line stepper (NA: 0.65)' without giving a dose for that specific tool.). Dose scales with film thickness and depends on your optics, so treat it as a starting point and run a dose array.
- As published
- Post-exposure bake
- 95 °C · 2 min
Not published for this resist: Dose at 365 nm, Dose at 405 nm — characterize on-tool.
SOURCE: Process conditions diagram, p.51 of Allresist AR-N 4300 series product information (English); dose stated as "Exposure dose (E0, broadband UV stepper): 140 mJ/cm², 1.4 µm".
Development
- Developer
- AR 300-475
- Dilution
- Not published — characterize on-tool
- Time
- 60 s
- Method
- puddle
- Rinse
- DI-H2O, 30 s
- Developer family
- TMAH-based
SOURCE: Process conditions diagram, p.51; Process parameters table, p.50
Hard bake, etch & strip
- Etch resistance
- Stripper
- AR 300-76 or AR 300-72 (Process chemicals table, p.50); alternatively AR 300-76 or O2 plasma ashing per the Process conditions diagram, p.51.
- Storage
- "Storage 6 month (°C): 10 - 18" (Properties I table, p.50) — i.e. a 6-month shelf life is stated when stored at 10-18 °C.
Not published for this resist: Hard bake, Descum — characterize on-tool.
SOURCE: Process conditions diagram, p.51
Where it's used
AR-N 4340 is Allresist's highly sensitive negative-tone photoresist in the AR-N 4300 series, described as 'novolac with photochemical acid generator and amine-based crosslinking agent' — a chemically amplified negative chemistry (mapped here to the 'car' enum value) rather than the older bisazide-novolak crosslinking chemistry used in resists like ma-N 1400. Development strongly depends on the crosslinking-bake temperature: the datasheet's own TCD table shows optimum crosslinking-bake temperatures of 90-100 °C, with clearing dose rising sharply outside that window (480 mJ/cm² at 70 °C vs. 65 mJ/cm² at 100 °C) and the resist becoming completely undevelopable above 130 °C. Undercut (lift-off) profiles are obtained not by underexposing but by extending development time at the resist's minimum clearing dose, per the datasheet's explicit recommendation. The published exposure dose (140 mJ/cm² for a 1.4 µm film) is a broadband figure spanning i-line/h-line/g-line together (365/405/436 nm) rather than a single-wavelength dose, so it is recorded as an unattributed value rather than filed under either the i-line or h-line field — a separately mentioned i-line-only stepper configuration (NA 0.65) is given no dose at all. A single-grade spin-speed-vs-thickness figure exists in the datasheet (0-8000 rpm, 0-5 µm), but only the exact 4000 rpm -> 1.4 µm anchor from the accompanying numeric table is published here as structured data; additional curve points should be read directly from the source figure by a human reviewer.
Sources & disclaimer
- Allresist — AR-N 4340 datasheet (p.50: 'As of January 2014'; p.51: 'As of January 2016' (the two pages of this two-page spread carry different revision dates as printed)) · accessed 2026-07-10
Manufacturer datasheet values are starting points; optimal parameters depend on your substrate, equipment and environment. Product names and trademarks belong to their respective owners. NANYTE is not affiliated with the manufacturers listed. Last updated 2026-07-12.