https://nanyte.com/photoresists/ar-n-4340 · last updated 2026-07-26
- Manufacturer
- Allresist
- Tone
- negative
- Chemistry
- Chemically amplified
- Thickness
- 1.4–2 µm
- Exposure dose
- 140 mJ/cm²
- Developer
- AR 300-475
- Applications
- Etch mask · Lift-off
Human-verified — checked against the manufacturer's datasheet by a person.
- Substrate
- Resist
- Exposed
Spin coating
Data points
| Series | rpm | µm |
|---|---|---|
| AR-N 4340 | 500 | 4.2 |
| 1000 | 3.0 | |
| 2000 | 2.1 | |
| 3000 | 1.7 | |
| 4000 | 1.5 | |
| 5000 | 1.3 | |
| 6000 | 1.2 |
Values are the manufacturer’s starting points, not a guarantee — characterize on your own tool. Series digitized from a published figure are approximate (±10 %).
read from figure, 'Spin curve' (D₀/µm 0.0–5.0 vs rpm 0–8000), p.50 of Allresist AR-N 4300 product-information sheet (as of January 2014); single-grade chart, one legended trace labeled 'AR-N 4340' — no curve-identification ambiguity. Seven diamond markers are plotted, at rpm 500/1000/2000/3000/4000/5000/6000; the fitted line continues unmarked to 8000 rpm at ~1.05 µm, and that tail carries no discrete marker so it is not read as a point. The figure's 4000 rpm marker reads ≈1.47 µm, about 5% above the Properties I table's printed 'Film thickness/4000 rpm (µm): 1.4' (p.50, cross-referenced by the Coating box, p.51: '4000 rpm, 60 s, 1.4 µm') — the table value is the more authoritative single number, the figure read close but not exact.
- Spin-speed-vs-thickness figure ('Spin curve', p.50, axes D₀/µm 0-5.0 vs rpm 0-8000) is a single-grade chart: one legended AR-N 4340 trace with 7 diamond markers from 500-6000 rpm, anchored against the Properties I table's 4000 rpm -> 1.4 µm reference point (the figure's own 4000 rpm marker reads ≈1.47 µm, a ~5% deviation from the table value — both are recorded).
- No dispense volume, acceleration ramp, or edge-bead-removal step is described anywhere in this document.
- Adhesion
- HMDS not required — Datasheet specifies Allresist's own adhesion promoter AR 300-80 (Process chemicals table, p.50); does not mention HMDS specifically either way.
Soft bake
- Soft bake
- 90 °C · 60 s · hotplate
- Notes
- ± 1 °C tolerance. Alternative: 85 °C, 25 min (1500 s) convection oven.
SOURCE: Process conditions diagram, p.51; Process parameters table, p.50
Exposure dose
The manufacturer publishes 140 mJ/cm². Dose scales with film thickness and depends on your optics, so treat it as a starting point and run a dose array.
- As published
- 140 mJ/cm² is a clearing dose, not a process dose: it is the energy that just clears a 1.4 µm film on a broadband stepper carrying 365, 405 and 436 nm together.
- Post-exposure bake
- 95 °C · 2 min
Not published for this resist: Dose at 365 nm, Dose at 405 nm — characterize on-tool.
SOURCE: Process conditions diagram, p.51 of Allresist AR-N 4300 series…
Process conditions diagram, p.51 of Allresist AR-N 4300 series product information (English); dose stated as "Exposure dose (E0, broadband UV stepper): 140 mJ/cm², 1.4 µm".
Development
- Developer
- AR 300-475
- Dilution
- Not published — characterize on-tool
- Time
- 60 s
- Method
- puddle
- Rinse
- DI-H2O, 30 s
- Developer family
- TMAH or buffered alkaline
SOURCE: Process conditions diagram, p.51; Process parameters table, p.50
Hard bake, etch & strip
- Etch resistance
- "Plasma etching resistant, temperature-stable up to 220 °C after subsequent treatment" (Characteristics, p.50).
- Stripper
- AR 300-76 or AR 300-72 (Process chemicals table, p.50); alternatively AR 300-76 or O2 plasma ashing per the Process conditions diagram, p.51.
- Storage
- "Storage 6 month (°C): 10 - 18" (Properties I table, p.50) — i.e. a 6-month shelf life is stated when stored at 10-18 °C.
Not published for this resist: Hard bake, Descum — characterize on-tool.
SOURCE: Process conditions diagram, p.51
Where it's used
Practical notes from the datasheet
AR-N 4340 is Allresist's highly sensitive negative-tone photoresist in the AR-N 4300 series, described as 'novolac with photochemical acid generator and amine-based crosslinking agent' — a chemically amplified negative chemistry (mapped here to the 'car' enum value) rather than the older bisazide-novolak crosslinking chemistry used in resists like ma-N 1400. Development strongly depends on the crosslinking-bake temperature: the datasheet's own TCD table shows optimum crosslinking-bake temperatures of 90-100 °C, with clearing dose rising sharply outside that window (480 mJ/cm² at 70 °C vs. 65 mJ/cm² at 100 °C) and the resist becoming completely undevelopable above 130 °C. Undercut (lift-off) profiles are obtained not by underexposing but by extending development time at the resist's minimum clearing dose, per the datasheet's explicit recommendation. The published exposure dose (140 mJ/cm² for a 1.4 µm film) is a broadband figure spanning i-line/h-line/g-line together (365/405/436 nm) rather than a single-wavelength dose, so it is recorded as an unattributed value rather than filed under either the i-line or h-line field — a separately mentioned i-line-only stepper configuration (NA 0.65) is given no dose at all. A single-grade spin-speed-vs-thickness figure exists in the datasheet (0-8000 rpm, 0-5 µm), but only the exact 4000 rpm -> 1.4 µm anchor from the accompanying numeric table is published here as structured data; additional curve points should be read directly from the source figure by a human reviewer.
Sources & disclaimer
- Allresist — AR-N 4340 datasheet (p.50: 'As of January 2014'; p.51: 'As of January 2016' (the two pages of this two-page spread carry different revision dates as printed)) · accessed 2026-07-10
- https://www.allresist.com/portfolio-item/developer-ar-300-475/ — Allresist's own product page for developer AR 300-475: gives its main component as TMAH and its metal-ion content as under 0.1 ppm. Read together with the AR 300-26 page (sodium borate / sodium hydroxide) and the AR 300-35 page (sodium metasilicate / phosphate), it establishes that the developers this resist's own "Development recommendations" table offers span both a metal-ion-free and a metal-ion-containing chemistry.
- Cao et al.. Multi-photon laser lithography of AR-N 4340 photoresist with a spatial resolution at nanoscale. Proc. SPIE 10842, 9th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Subdiffraction-limited Plasmonic Lithography and Innovative Manufacturing Technology (2019). doi:10.1117/12.2506365Direct-write multi-photon laser lithography of AR-N 4340, reporting nanoscale spatial resolution. Relevant here because it exercises this chemically amplified negative resist under focused-laser direct writing rather than the mask-aligner exposure the datasheet describes.
Manufacturer datasheet values are starting points; optimal parameters depend on your substrate, equipment and environment. Product names and trademarks belong to their respective owners. NANYTE is not affiliated with the manufacturers listed. Last updated 2026-07-26.