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AR-P 3510T process recipe

Positive-tone, DNQ-novolak resist from Allresist's AR-P 3500 series with a wide process range (broadband UV / i-line / g-line); AR-P 3510T is the TMAH-compatible ('T') variant of the 3510 grade, coating to 2.0 µm at 4000 rpm and rated suitable for 0.26 N TMAH developer.

https://nanyte.com/photoresists/ar-p-3510t · last updated 2026-07-26

At a glance
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Manufacturer
Allresist
Tone
positive
Chemistry
DNQ-novolak
Thickness
2 µm
Developer
AR 300-26 (1:2) or AR 300-35 (undiluted) or AR 300-44
Applications
Lift-off · Etch mask
The exposed resist dissolves in the developer; the unexposed film stays. Schematic cross-sections for AR-P 3510T — feature width, film aspect ratio and sidewall angle are illustrative, not to scale.
01 / Coating

Spin coating

The manufacturer does not publish a spin curve for AR-P 3510T.

  • The 'Spin curve' figure (p.1, bottom-left; axes: film thickness 1.0–6.0 µm vs. spin speed 0–8000 rpm) plots TWO traces, and per the manufacturer's OWN legend each trace already covers a combined pair of grades: 'AR-P 3510/3510 T' as one trace, 'AR-P 3540/3540 T' as the other — this document itself, not an extraction error, presents 3510 and 3510T as sharing one spin curve.
  • No numeric spin table accompanies that figure, so no curve is published for this grade.
  • The only confirmed numeric anchor is 2.0 µm at 4000 rpm, 60 s spin time (from the 'Coating' row of the worked process-conditions table, p.1, 'AR-P 3510' column — unsplit for this grade pair per the Properties I table).
  • No accel or edge-bead detail is published.
Adhesion
HMDS not required — Manufacturer states 'very good adhesion properties' as a series-wide (AR-P 3500(T)) characteristic. The 'Process chemicals' box (p.1) names AR 300-80 as the adhesion promoter — NOT HMDS — but that box is positioned alongside the AR-P 3540T worked example specifically, so it is not confirmed to be identical for AR-P 3510T; included here as the only adhesion-promoter product named anywhere in this document.
02 / Bake

Soft bake

Soft bake
100 °C · 60 s · hotplate
Notes
'Tempering (± 1 °C): 100 °C, 1 min, hot plate OR 95 °C, 25 min, convection oven' — this row of the worked process-conditions table (p.1) is NOT split between the table's two example columns (AR-P 3510, AR-P 3540 T), i.e. it is presented as one shared condition for the worked AR-P 3500(T) example, which is why it is attributed to AR-P 3510T here despite that exact SKU not being one of the two labeled columns. Oven alternative: 95 °C for 25 min (1500 s).

SOURCE: "Tempering" row, "Process conditions" table, p.1, of allresist_produktinfos_ar-p3500_3500t_englisch.pdf

03 / Exposure

Exposure dose

Allresist splits exposure dose by grade and the T variant gets no column of its own — the two grades that do are 55 mJ/cm² for AR-P 3510 and 120 mJ/cm² for AR-P 3540 T. Neither is published as this grade's dose. Run a dose array on your own tool to land the working dose.

Not published for this resist: Dose at 365 nm, Dose at 405 nm — characterize on-tool.

04 / Development

Development

Developer
AR 300-26 (1:2) or AR 300-35 (undiluted) or AR 300-44
Dilution
AR 300-26 at 1:2; AR 300-35 used undiluted; AR 300-44 listed as the third (ready-to-use) option — three alternative developer/dilution combinations named for the combined 'AR-P 3510 T, 3540 T' row of the 'Development recommendations' table (p.1). This differs from the base AR-P 3510/3540 row, which instead lists AR 300-26 at 1:5, AR 300-35 at 1:1, and 'AR 300-40 (300-47), 1:1'.
Time
Not published — characterize on-tool
Method
puddle
Rinse
DI-H2O, 30 s
Developer family
TMAH or buffered alkaline
SOURCE: "Development recommendations" table (AR-P 3510 T, 3540 T row)…

"Development recommendations" table (AR-P 3510 T, 3540 T row) + "Development"/"Rinse" rows of the "Process conditions" table, p.1, of allresist_produktinfos_ar-p3500_3500t_englisch.pdf

05 / Post-processing

Hard bake, etch & strip

Hard bake
115 °C · 60 s
Descum
Not published — characterize on-tool
Etch resistance
Manufacturer states the AR-P 3500(T) series is 'plasma etching resistant, temperature-stable up to 120 °C' (Characterisation, series-wide, p.1). A 'Plasma etching rates (nm/min)' table (5 Pa, 240–250 V bias: Ar-sputtering 7, O2 165, CF4 37, 80 CF4 + 16 O2 88) is given but is grouped with the AR-P 3540T-labeled Cauchy coefficients, so it is not confirmed to represent AR-P 3510T specifically and is not carried into a numeric field here.
Stripper
AR 300-70 or O2 plasma ashing ("Removal" row, "Process conditions" table, p.1 — unsplit, shared across the worked example). Note: a separate 'Process chemicals' box elsewhere on p.1, positioned alongside the AR-P 3540T worked example, instead lists 'Remover AR 300-76, T: AR 300-76' — that box is not confirmed to apply to AR-P 3510T and is not used as the primary value here.
Storage
10–18 °C, approximately 6-month shelf life ("Storage 6 month (°C)" row, "Properties I" table, p.1 — a single value spanning both the 3510/3510T and 3540/3540T column groups).

SOURCE: "Post-bake (optional)" row, "Process conditions" table, p.1, of allresist_produktinfos_ar-p3500_3500t_englisch.pdf

06 / Applications

Where it's used

Practical notes from the datasheet

AR-P 3510T is the TMAH-compatible ('T') variant of Allresist's AR-P 3510 grade within the wider AR-P 3500(T) series, a classic DNQ/novolac positive resist for IC production with broadband UV / i-line / g-line sensitivity. The manufacturer states the 3500T sub-line is 'suitable for TMAH developer 0.26 n', distinguishing it from the base (non-T) grades. Several process parameters in this document are given only for the two SPECIFIC worked example columns the table actually labels — 'AR-P 3510' (base) and 'AR-P 3540 T' — and NOT for 'AR-P 3510 T' itself; most notably the exposure dose (55 vs. 120 mJ/cm² for the two shown grades) is clearly grade-sensitive, so no dose is recorded here rather than borrowing the base grade's number. By contrast, film thickness at 4000 rpm (2.0 µm) and the spin-curve figure are explicitly shared/combined between 3510 and 3510T by the manufacturer's own table structure and legend. A large block of dose-range, depth-of-focus, and SEM linearity/dark-field-erosion data on p.1 (bottom) and all of p.2 is explicitly labeled 'AR-P 3540 T' and belongs to that different grade, not to AR-P 3510T — excluded here despite the superficially similar SKU name.

07 / Sources

Sources & disclaimer

  • AllresistAR-P 3510T datasheet (As of January 2014) · accessed 2026-07-10
  • https://www.allresist.com/portfolio-item/developer-ar-300-44/ — Allresist's own product page for developer AR 300-44: gives its main component as TMAH and its metal-ion content as under 0.1 ppm. Read together with the AR 300-26 page (sodium borate / sodium hydroxide) and the AR 300-35 page (sodium metasilicate / phosphate), it establishes that the developers this resist's own "Development recommendations" table offers span both a metal-ion-free and a metal-ion-containing chemistry.

Manufacturer datasheet values are starting points; optimal parameters depend on your substrate, equipment and environment. Product names and trademarks belong to their respective owners. NANYTE is not affiliated with the manufacturers listed. Last updated 2026-07-26.

Cite this recipe

NANYTE. "AR-P 3510T process recipe." NANYTE Photoresist Library. https://nanyte.com/photoresists/ar-p-3510t. Accessed 2026-07-26.

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