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NR71-3000P process recipe

NR71-3000P is Futurrex's high-photospeed negative-tone 365 nm resist with a straight sidewall profile and superior thermal stability (up to 180°C), coating roughly 2.2-6.0 µm across the manufacturer's published 800-5000 rpm spin range without requiring an HMDS adhesion promoter.

https://nanyte.com/photoresists/nr71-3000p · last updated 2026-07-12

At a glance
Manufacturer
Futurrex, Inc.
Tone
negative
Thickness
2.2–6 µm
Exposure dose
21 mJ/cm² at 365 nm
Developer
Resist Developer RD6
Applications
Etch mask
Etch maskSuitable for

Cross-checked — two independent extractions agree.

01 / Coating

Spin coating

NR71-3000P is spin-coated to 2.2–6 µm. The curve below is redrawn from the manufacturer's published data — read your target thickness off the vertical axis and take the matching spin speed as a starting point.

Spin curve for NR71-3000P: film thickness in µm against spin speed in rpm.0.002.04.06.01k2k3k4k5kSPIN SPEED (rpm)THICKNESS (µm)
Data points
NR71-3000P — film thickness (µm) by spin speed (rpm)
Seriesrpmµm
NR71-3000P8006.0
30003.0
40002.6
50002.2

Values are the manufacturer's starting points, not a guarantee; verify on your own tool. Characterize on-tool.

numeric table 'Film thickness after 150°C hotplate bake for 60 s (nm) / Coating spin speed, 40 s spin (rpm)', p.1 of Futurrex NR71-3000P Technical Information. The datasheet publishes each point as an nm RANGE, not a single value: published as 5700-6300 nm at 800 rpm, 2850-3150 nm at 3000 rpm, 2460-2720 nm at 4000 rpm, 2140-2326 nm at 5000 rpm; midpoint used for each (every range is symmetric, approx. nominal +/-4-5%), converted nm->um. The 3000 rpm midpoint (3000 nm = 3.0 um exactly) matches the '3000' in the product name NR71-3000P, corroborating the midpoint reading. Only 4 spin speeds are published (no 1000 or 2000 rpm rows, unlike the NR9-1500PY datasheet). human-adjudicated 2026-07-12 from the archived PDF.

Redrawn from the manufacturer's published data — hover to read values between points, click to pin.

Spin coating is at a selected speed for 40 s (Processing step 1). Edge Bead Remover EBR2 is applied to the bottom and edge of the coated wafer for 10 s, stopping 5 s before spin cycle completion (Processing step 2). Bake schedules differ by substrate thermal conductivity — see softbake/peb notes.

Adhesion
HMDS not required — Datasheet lists 'elimination of a need for application of adhesion promoters such as HMDS' as one of NR71-3000P's advantages over other resists (Description, p.1).
02 / Bake

Soft bake

Soft bake
150 °C · 60 s · hotplate
Notes
150°C/60 s applies to good thermal conductors (Si, GaAs, InP). For a 1 mm-thick glass substrate the datasheet instead specifies 165°C for 240 s.

SOURCE: Processing step 3, p.2

03 / Exposure

Exposure dose

The manufacturer publishes 21 mJ/cm² at 365 nm ('Sensitivity at 365 nm exposure wavelength (mJ/cm² for 1 µm thick film) 21' (Properties, p.1); Processing step 4: 'Resist exposure with a tool emitting 365 nm wavelength.'). Dose scales with film thickness and depends on your optics, so treat it as a starting point and run a dose array.

Dose at 365 nm
21 mJ/cm²
Dose at 405 nm
Not published — characterize on-tool
As published
'Sensitivity at 365 nm exposure wavelength (mJ/cm² for 1 µm thick film) 21' (Properties, p.1); Processing step 4: 'Resist exposure with a tool emitting 365 nm wavelength.'
Post-exposure bake
100 °C · 60 s

SOURCE: Properties, p.1

04 / Development

Development

Developer
Resist Developer RD6
Time
30 s
Rinse
Deionized water rinse until water resistivity reaches prescribed limit (Processing step 7).
Developer family
TMAH-based

Not published for this resist: Dilution, Method — characterize on-tool.

SOURCE: Processing steps 6-7, p.2

05 / Post-processing

Hard bake, etch & strip

Etch resistance
"Superior selectivity in RIE process" (Description, p.1).
Stripper
Resist Remover RR41 (Processing step 9, p.2) — note this differs from the RR5 remover specified for Futurrex's NR9-1500PY.
Storage
"Guaranteed shelf life at 25°C storage (years) 3" (Properties, p.1); "shelf life exceeding 3 years at room temperature storage" (Description, p.1).

Not published for this resist: Hard bake, Descum — characterize on-tool.

06 / Applications

Where it's used

Etch mask

NR71-3000P is Futurrex's high-photospeed negative-tone 365 nm resist, formulated in gamma-butyrolactone and rated for 180°C thermal stability — notably higher than the 100°C rating on Futurrex's NR9 series — and the datasheet lists elimination of an HMDS adhesion-promoter step as a specific advantage. Unlike NR9-1500PY, which is explicitly marketed for lift-off with a tunable undercut, this datasheet describes NR71-3000P's developed sidewall as 'straight' and makes no lift-off claim, so liftoffSuitable is left null rather than assumed either way. The datasheet gives two full bake schedules for both softbake and post-exposure bake — 150°C/60 s (softbake) and 100°C/60 s (PEB) for good thermal conductors (Si, GaAs, InP), versus 165°C/240 s and 110°C/240 s respectively for 1 mm-thick glass — a substrate-dependent difference easy to lose when copying a recipe across substrates. The 21 mJ/cm² sensitivity at 365 nm is explicitly normalized to a 1 µm-thick film, and resist removal uses Resist Remover RR41 (not the RR5 used for NR9-1500PY — the two SKUs' strip chemistries should not be conflated).

07 / Sources

Sources & disclaimer

Manufacturer datasheet values are starting points; optimal parameters depend on your substrate, equipment and environment. Product names and trademarks belong to their respective owners. NANYTE is not affiliated with the manufacturers listed. Last updated 2026-07-12.

Cite this recipe

NANYTE. "NR71-3000P process recipe." NANYTE Photoresist Library. https://nanyte.com/photoresists/nr71-3000p. Accessed 2026-07-12.

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