https://nanyte.com/photoresists/ma-n-1420 · last updated 2026-07-12
- Manufacturer
- micro resist technology
- Tone
- negative
- Chemistry
- Bisazide-novolak
- Thickness
- 1.4–3.4 µm
- Exposure dose
- 550 mJ/cm²
- Developer
- ma-D 533/S
- Applications
- Etch mask · Lift-off
Cross-checked — two independent extractions agree.
Spin coating
ma-N 1420 is spin-coated to 1.4–3.4 µm. The curve below is redrawn from the manufacturer's published data — read your target thickness off the vertical axis and take the matching spin speed as a starting point.
Data points
| Series | rpm | µm |
|---|---|---|
| ma-N 1420 | 1000 | 3.4 |
| 2000 | 2.4 | |
| 3000 | 2.0 | |
| 4000 | 1.7 | |
| 5000 | 1.5 | |
| 6000 | 1.4 |
Values are the manufacturer's starting points, not a guarantee; verify on your own tool. Characterize on-tool. Series digitized from a published figure were independently cross-checked by a second blind read; treat those values as approximate (±10 %).
re-extracted 2026-07-12, pixel-calibrated via PyMuPDF vector-path extraction (the chart is drawn as native PDF vector line segments, so the trace's true (x,y) coordinates were pulled directly from the page's vector drawing commands rather than estimated; axes calibrated from the tick-label text bounding boxes). Fig. 1 ('Spin curves of the ma-N 1400 series, 30 s spin time'), p.3 (numbered p.2 on the printed page) of micro resist technology's 'Processing guidelines — Negative Tone Photoresist Series ma-N 1400' datasheet (doc code ls.05.11.25.02). The curve is a continuous line with no point markers, so values are exact line-crossings read only at the labelled gridlines (every 1000 rpm from 1000 to 6000) — never interpolated between them or extrapolated past the line's plotted range. The 3000 rpm point (1.97 µm) is cross-confirmed by the numeric table on p.1 ('Physical properties of the resist solution': Film Thickness 2.0 ± 0.1 µm, footnoted 'spin coated at 3000 rpm for 30 s'). Supersedes the earlier eyeball read (which also guessed intermediate 1500/2500 rpm points not distinguishable on the chart).
Substrates should be free of impurities/moisture, baked at 200°C and cooled immediately before coating (or O2/ozone plasma cleaned); HMDS is advised for adhesion to Si/SiO2. No dispense-volume/acceleration/edge-bead protocol is published for ma-N 1400 (unlike some other resist datasheets); equipment used to generate the datasheet's own data: Convac or Suss RC5 spin coater without cover, 3000 rpm / 30 s reference condition.
- Adhesion
Soft bake
- Soft bake
- 100 °C · 2 min · hotplate
- Notes
SOURCE: Processing conditions - STANDARD PROCESS table + 'Prebake' section, p.2 and p.3, micro resist technology ma-N 1400 datasheet ls.05.11.25.02
Exposure dose
The manufacturer publishes 550 mJ/cm² (Broadband exposure with the dose measured/specified at λ = 365 nm (i-line); footnote 1 of the Processing Conditions table explicitly states 'broadband exposure, intensity measured at λ=365 nm'.). Dose scales with film thickness and depends on your optics, so treat it as a starting point and run a dose array.
- As published
Not published for this resist: Dose at 365 nm, Dose at 405 nm — characterize on-tool.
SOURCE: Processing conditions - STANDARD PROCESS table, p.2, micro resist technology ma-N 1400 datasheet ls.05.11.25.02
Development
- Developer
- ma-D 533/S
- Dilution
- ready-to-use (undiluted)
- Time
- 60 s
- Method
- immersion
- Rinse
- DI water
- Developer family
- TMAH-based
SOURCE: Processing conditions - STANDARD PROCESS table, p.2, micro resist technology ma-N 1400 datasheet ls.05.11.25.02. Development time for ma-N 1420 is 60 ± 10 s; developer temperature should be 20–25°C.
Hard bake, etch & strip
- Hard bake
- 100 °C · 30 min
- Descum
- Not published — characterize on-tool
- Etch resistance
- Stripper
- Storage
SOURCE: 'Hardbake (optional)' section, p.4, micro resist technology ma-N 1400 datasheet ls.05.11.25.02
Where it's used
ma-N 1420 gives a nominal 2.0 ± 0.1 µm film at the reference 3000 rpm / 30 s spin condition. Standard processing (100°C/120s prebake, 550 mJ/cm² dose, 60s develop) yields near-vertical sidewalls. Undercut (lift-off) profiles are produced primarily by INCREASING develop time (the manufacturer's preferred lever) and/or reducing exposure dose, while holding prebake conditions at standard values — the datasheet's own worked example (2.0 µm film, 100°C/120s prebake, 550 mJ/cm² dose) shows undercut of 0.6/0.8/1.7/2.1 µm for ma-D 533/S develop times of 65/80/100/120 s respectively. Raising prebake temperature (up to 160°C) and/or extending prebake time reduces undercut for a given develop time and improves thermal stability for sputtering, but increases the develop time needed. For clean PVD lift-off, resist thickness should be 1.5–2× the metal deposition thickness. Exposure dose must be de-rated for reflective/absorbing substrates (e.g. ~0.5× the Si dose on Au).
Sources & disclaimer
- micro resist technology — ma-N 1420 datasheet (micro resist technology 'Processing guidelines — Negative Tone Photoresist Series ma-N 1400', document code ls.05.11.25.02 (no separate calendar date printed on the document; also mirrored as vh_man_1400_en_05112502_ls.pdf)) · accessed 2026-07-10
- https://www.microresist.de/en/produkt/ma-d-533-s/ — used only to confirm that the ma-D 533/S developer is TMAH-based (the primary ma-N 1400 datasheet only says 'aqueous alkaline development' without naming the base) — fills the developerFamily field, not a numeric process source
- Thoen et al.. Combined ultraviolet- and electron-beam lithography with Micro-Resist-Technology GmbH ma-N1400 resist. Journal of Vacuum Science & Technology B (2022). doi:10.1116/6.0001918one ma-N 1400 layer exposed by UV and 100 kV e-beam for an on-chip THz spectrometer
Manufacturer datasheet values are starting points; optimal parameters depend on your substrate, equipment and environment. Product names and trademarks belong to their respective owners. NANYTE is not affiliated with the manufacturers listed. Last updated 2026-07-12.