ma-N 1410 process recipe

Spin coating

ma-N 1410 is spin-coated to 1 µm. The curve below is redrawn from the manufacturer's published data — read your target thickness off the vertical axis and take the matching spin speed as a starting point.

Fig. 1 (p.2, 'Spin curves of the ma-N 1400 series, 30 s spin time') plots a full thickness-vs-spin-speed curve for ma-N 1410 alongside ma-N 1405/1407/1420 (four individually legended, distinctly colored lines, no individual point markers, 1000-6000 rpm, ranked by viscosity: 1420 highest/topmost black, 1410 second red, 1407 third green, 1405 lowest blue). The red (ma-N 1410) trace has now been digitized at its 6 labelled x-axis gridlines — see spinCurves; the chart's own vertical reference line at 3000 rpm crosses the trace at ~1.0 µm, matching the numeric-table anchor below essentially exactly, which is the strongest evidence the correct (red) trace was isolated in a chart carrying no point markers. The datasheet additionally publishes a single verified numeric ANCHOR POINT — 3000 rpm → 1 µm (numeric table 'Physical properties of the resist solution', p.1 of ma-N 1400 series processing guidelines (footnote 1: 'Spin coated at 3000 rpm for 30 s'); Film Thickness = 1.0 ± 0.1 µm for ma-N 1410. Corroborated by the 'Processing conditions - STANDARD PROCESS' table, p.2, which also lists 1.0 µm for ma-N 1410 at the same 3000 rpm/30 s condition.). A prior extraction pass declined to digitize this figure at all (citing two unrelated prior misreads on other resists, SU-8 2050 and LOR 3A); this pass re-attempted the read directly against the source chart, anchored and cross-checked against the two numeric tables above, rather than repeating that blanket refusal. 'Uniform coatings are obtained by spin coating of ma-N 1400 solutions in the thickness range indicated in the spin curves' (p.2); no dispense volume, acceleration ramp, or edge-bead-removal step is described anywhere in this document.

Soft bake

Soft bake

100 °C · 1.5 min · hotplate

Notes

Value shown (100 °C, 90 s) is the ma-N 1410 column of the hotplate prebake row; other grades in the same table use different times at the same 100 °C (1405/1407: 60 s, 1420: 120 s). An oven alternative is also given: 100-105 °C for 15-30 min (shared across all grades). Recommended prebake temperature also varies by substrate: Si 100-120 °C, Au 120 °C, Si3N4 120 °C, GaAsP/GaAs 100 °C (p.3) — the 100 °C/90 s value applies to the standard (unspecified-substrate) process. A higher prebake (up to 160 °C) or longer time increases etch resistance/thermal stability but also increases developing time.Show more

SOURCE: Processing conditions - STANDARD PROCESS table, p.2; Recommended prebake temperatures table, p.3

Exposure dose

The manufacturer publishes 450 mJ/cm² ('Exposure dose [mJ cm-2]... broadband exposure, intensity measured at λ=365 nm' (footnote 1, Processing conditions table, p.2). 'The resists are effective for broadband or i-line exposure' (Exposure section, p.3).). Dose scales with film thickness and depends on your optics, so treat it as a starting point and run a dose array.

As published

'Exposure dose [mJ cm-2]... broadband exposure, intensity measured at λ=365 nm' (footnote 1, Processing conditions table, p.2). 'The resists are effective for broadband or i-line exposure' (Exposure section, p.3).Show more

Not published for this resist: Dose at 365 nm, Dose at 405 nm — characterize on-tool.

SOURCE: Processing conditions - STANDARD PROCESS table, p.2

Development

Developer

ma-D 533/S

Dilution

Not published — characterize on-tool

Time

30 s

Method

immersion

Rinse

Developed resist films are thoroughly rinsed with deionized water and then dried.

Developer family

TMAH-based

SOURCE: Processing conditions - STANDARD PROCESS table (footnote 2: immersion development), p.2; Develop section, p.4

Hard bake, etch & strip

Hard bake

100 °C · 30 min

Descum

Not published — characterize on-tool

Etch resistance

"Well suitable as an etch mask exhibiting high dry and wet etch resistance" (Characteristics, p.1).

Stripper

mr-Rem 660 (solvent based) and ma-R 404/S (strongly alkaline) recommended; acetone, N-methylpyrrolidone (NMP) or oxygen plasma also suitable for residue-free removal (Removal section, p.4). For lift-off specifically: mr-Rem 660 or NMP at 40-60 °C assisted by ultrasonics, or acetone assisted by ultrasonics (p.5).Show more

Storage

"Storage at temperatures of 18 – 25 °C is recommended. Do not store ma-N 1400 resists in a refrigerator. Resists and unprocessed resist films have to be stored under yellow light. Keep the bottle closed when not in use. Under these conditions a shelf life of 6 months from the date of manufacture is ensured." (Storage section, p.5)Show more

SOURCE: Hardbake (optional) section, p.4

Where it's used

ma-N 1410 is the third grade (of four) in micro resist technology's ma-N 1400 negative-tone series, nominally coating 1.0 ± 0.1 µm at 3000 rpm/30 s and developing in the metal-ion-free ma-D 533/S developer recommended for microelectronics work. The standard process yields nearly vertical sidewalls; the datasheet describes a separate lift-off recipe in which undercut profile is tuned primarily by extending development time (holding exposure dose and prebake constant) rather than by underexposing — a worked 2.0 µm-thick example (not this grade specifically) shows undercut growing from 0.6 to 2.1 µm as development time increases from 65 to 120 s at a fixed 550 mJ/cm² dose and 100 °C/120 s prebake. For clean lift-off the datasheet recommends a resist film 1.5-2x the metal deposition thickness, plus — for sputtered metals in particular — a higher prebake and/or a deep-UV (200-300 nm) flood exposure at 2-5x the patterning dose to thermally stabilize the pattern before deposition. The exposure dose (450 ± 30 mJ/cm²) is explicitly measured at 365 nm on a broadband tool; the document plots UV/vis absorption out past 405 nm but never gives a dose at that wavelength, so the h-line field is left null. The datasheet's Fig. 1 plots a full ma-N 1400-series spin curve (four grades, 1000-6000 rpm) that would let a human read additional rpm points for ma-N 1410, but only the single verified 3000 rpm/1.0 µm numeric-table anchor is published here as structured data — see spinNotes. Chemistry classified as bisazide-novolak from microresist.de's statement that the ma-N 1400 series is an 'aromatic bisazide/novolac based resist series' (chemistry classified 2026-07-12 from manufacturer SDS/TDS).

Sources & disclaimer

• micro resist technology GmbH — ma-N 1410 datasheet (ls.05.11.25.02) · accessed 2026-07-10
• https://www.microresist.de/wp-content/uploads/2022/08/NegativeResists_Flyer_Aug22.pdf — fetched and read in this same session (for the mr-dwl-40 recipe); used only to corroborate that ma-D 533/S is TMAH-based (that flyer's Developer table, p.2, lists 'ma-D 533/S (TMAH based)' for the ma-N 1400 series), since the primary datasheet referenced above states only 'aqueous alkaline development' and does not itself name the alkali type for ma-D 533/S.
• https://microresist.de/en/produkt/ma-n-1400-series/ — microresist.de states the ma-N 1400 series is an 'aromatic bisazide/novolac based resist series'; the basis for classifying ma-N 1410 as bisazide-novolak.

1. Thoen et al.. Combined ultraviolet- and electron-beam lithography with Micro-Resist-Technology GmbH ma-N1400 resist. Journal of Vacuum Science & Technology B (2022). doi:10.1116/6.0001918
   one ma-N 1400 layer exposed by UV and 100 kV e-beam for an on-chip THz spectrometer

Manufacturer datasheet values are starting points; optimal parameters depend on your substrate, equipment and environment. Product names and trademarks belong to their respective owners. NANYTE is not affiliated with the manufacturers listed. Last updated 2026-07-12.

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