https://nanyte.com/photoresists/ma-n-1410 · last updated 2026-07-26
- Manufacturer
- micro resist technology GmbH
- Tone
- negative
- Chemistry
- Bisazide-novolak
- Thickness
- 1 µm
- Exposure dose
- 450 mJ/cm²
- Developer
- ma-D 533/S
- Applications
- Etch mask · Lift-off · MEMS structural
Cross-checked — two independent extractions agree on the spin curve and the single-value figures.
- Substrate
- Resist
- Exposed
Spin coating
Data points
| Series | rpm | µm |
|---|---|---|
| ma-N 1410 | 1000 | 1.8 |
| 2000 | 1.3 | |
| 3000 | 1.0 | |
| 4000 | 0.87 | |
| 5000 | 0.77 | |
| 6000 | 0.70 |
Values are the manufacturer’s starting points, not a guarantee — characterize on your own tool. Series digitized from a published figure are approximate (±10 %).
read from figure, "Fig. 1: Spin curves of the ma-N 1400 series, 30 s spin time", p.2 of ma-N 1400 series Processing guidelines (micro resist technology, rev. ls.05.11.25.02); trace identified as the red line, second from the top, per the chart's own inline legend (ma-N 1420 black / ma-N 1410 red / ma-N 1407 green / ma-N 1405 blue), matching the series' viscosity ranking (1420 highest > 1410 > 1407 > 1405 lowest). The curve carries no individual point markers, so values are read at the 6 labelled x-axis gridlines (1000/2000/3000/4000/5000/6000 rpm). The chart's own vertical reference line at 3000 rpm crosses the red trace at ~1.0 µm, matching the numeric anchor (Film Thickness = 1.0 ± 0.1 µm at 3000 rpm/30s, 'Physical properties of the resist solution' table p.1, corroborated by the 'Processing conditions - STANDARD PROCESS' table p.2).
- Fig. 1 (p.2, 'Spin curves of the ma-N 1400 series, 30 s spin time') plots a full thickness-vs-spin-speed curve for ma-N 1410 alongside ma-N 1405/1407/1420 (four individually legended, distinctly colored lines, no individual point markers, 1000-6000 rpm, ranked by viscosity: 1420 highest/topmost black, 1410 second red, 1407 third green, 1405 lowest blue).
- The red (ma-N 1410) trace is plotted here from its 6 labelled x-axis gridlines; the chart's own vertical reference line at 3000 rpm crosses it at ~1.0 µm, matching the numeric-table anchor below essentially exactly, which confirms the right trace was isolated in a chart carrying no point markers.
- The datasheet additionally publishes a single numeric ANCHOR POINT — 3000 rpm → 1 µm (numeric table 'Physical properties of the resist solution', p.1 of ma-N 1400 series processing guidelines (footnote 1: 'Spin coated at 3000 rpm for 30 s'); Film Thickness = 1.0 ± 0.1 µm for ma-N 1410. Corroborated by the 'Processing conditions - STANDARD PROCESS' table, p.2, which also lists 1.0 µm for ma-N 1410 at the same 3000 rpm/30 s condition.).
- 'Uniform coatings are obtained by spin coating of ma-N 1400 solutions in the thickness range indicated in the spin curves' (p.2); no dispense volume, acceleration ramp, or edge-bead-removal step is described anywhere in this document.
- Adhesion
- HMDS recommended — 'For improving resist film adhesion to Si and SiO2 substrates it is advisable to apply an adhesion promoter such as HMDS' (Substrate preparation, p.2).
Soft bake
- Soft bake
- 100 °C · 1.5 min · hotplate
- Notes
- Value shown (100 °C, 90 s) is the ma-N 1410 column of the hotplate prebake row; other grades in the same table use different times at the same 100 °C (1405/1407: 60 s, 1420: 120 s).
SOURCE: Processing conditions - STANDARD PROCESS table, p.2; Recommended prebake temperatures table, p.3
Exposure dose
The manufacturer publishes 450 mJ/cm². Dose scales with film thickness and depends on your optics, so treat it as a starting point and run a dose array.
- As published
- 450 ± 30 mJ/cm² is the standard-process dose.
Not published for this resist: Dose at 365 nm, Dose at 405 nm — characterize on-tool.
SOURCE: Processing conditions - STANDARD PROCESS table, p.2
Development
- Developer
- ma-D 533/S
- Dilution
- Not published — characterize on-tool
- Time
- 30 s (20–40 s)
- Method
- immersion
- Rinse
- Developed resist films are thoroughly rinsed with deionized water and then dried.
- Developer family
- TMAH-based
SOURCE: Processing conditions - STANDARD PROCESS table (footnote 2: immersion development), p.2; Develop section, p.4
Hard bake, etch & strip
- Hard bake
- 100 °C · 30 min
- Descum
- Not published — characterize on-tool
- Etch resistance
- "Well suitable as an etch mask exhibiting high dry and wet etch resistance" (Characteristics, p.1).
- Stripper
- mr-Rem 660 (solvent based) and ma-R 404/S (strongly alkaline) recommended; acetone, N-methylpyrrolidone (NMP) or oxygen plasma also suitable for residue-free removal (Removal section, p.4).
- Storage
- "Storage at temperatures of 18 – 25 °C is recommended. Do not store ma-N 1400 resists in a refrigerator.
SOURCE: Hardbake (optional) section, p.4
Where it's used
Practical notes from the datasheet
ma-N 1410 is the third grade (of four) in micro resist technology's ma-N 1400 negative-tone series, nominally coating 1.0 ± 0.1 µm at 3000 rpm/30 s and developing in the metal-ion-free ma-D 533/S developer recommended for microelectronics work. The standard process yields nearly vertical sidewalls; the datasheet describes a separate lift-off recipe in which undercut profile is tuned primarily by extending development time (holding exposure dose and prebake constant) rather than by underexposing — a worked 2.0 µm-thick example (not this grade specifically) shows undercut growing from 0.6 to 2.1 µm as development time increases from 65 to 120 s at a fixed 550 mJ/cm² dose and 100 °C/120 s prebake. For clean lift-off the datasheet recommends a resist film 1.5-2x the metal deposition thickness, plus — for sputtered metals in particular — a higher prebake and/or a deep-UV (200-300 nm) flood exposure at 2-5x the patterning dose to thermally stabilize the pattern before deposition. The exposure dose (450 ± 30 mJ/cm²) is explicitly measured at 365 nm on a broadband tool; the document plots UV/vis absorption out past 405 nm but never gives a dose at that wavelength. The datasheet's Fig. 1 plots a full ma-N 1400-series spin curve (four grades, 1000-6000 rpm) and the one point it also prints as a number is the 3000 rpm/1.0 µm table anchor. Chemistry classified as bisazide-novolak from microresist.de's statement that the ma-N 1400 series is an 'aromatic bisazide/novolac based resist series'.
Grades in this family
Other grades in the ma-N 1400 series line differ mainly in coating thickness:
| Grade | Thickness | Exposure dose |
|---|---|---|
| ma-N 1410 (this page) | 1 µm | 450 mJ/cm² |
| ma-N 1420 | 1.4–3.4 µm | 550 mJ/cm² |
Troubleshooting
Common failure modes for ma-N 1410, answered from the manufacturer's datasheet and application notes. These are starting points — your substrate, tooling and environment shift the specifics, so calibrate on-tool.
Which developer does ma-N 1410 use?
ma-D 533/S, a TMAH-based (metal-ion-free) aqueous-alkaline developer recommended for microelectronics work. The standard process for ma-N 1410 is 30 ± 10 s by immersion with the developer at 20–25°C, followed by a thorough deionized-water rinse and dry.
SOURCE: ma-N 1400 Processing Guidelines
micro resist technology ma-N 1400 Processing Guidelines (ls.05.11.25.02) — STANDARD PROCESS table, p.2 + Develop section, p.4; TMAH per microresist.de flyer
What is the exposure dose for ma-N 1410?
450 ± 30 mJ/cm² in the standard process, from broadband exposure with intensity measured at 365 nm (i-line). The document plots UV/vis absorption past 405 nm but never gives a dose value at h-line, so no 405 nm dose is published — characterize on-tool. The resist is effective for broadband or i-line exposure.
SOURCE: ma-N 1400 Processing Guidelines
micro resist technology ma-N 1400 Processing Guidelines (ls.05.11.25.02) — STANDARD PROCESS table + footnote 1 / Exposure section, p.2–3
What prebake (soft bake) does ma-N 1410 need?
100°C for 90 s on a hotplate is the standard prebake for ma-N 1410 (thinner 1405/1407 grades use 60 s, the thicker 1420 uses 120 s). An oven alternative is 100–105°C for 15–30 min. Recommended prebake temperature varies by substrate — 100–120°C on Si, 120°C on Au and Si3N4. A higher prebake (up to 160°C) or longer time raises etch resistance but also increases the develop time needed.
SOURCE: ma-N 1400 Processing Guidelines
micro resist technology ma-N 1400 Processing Guidelines (ls.05.11.25.02) — STANDARD PROCESS table, p.2 + Recommended prebake temperatures, p.3
Does ma-N 1410 need HMDS or an adhesion promoter?
Yes for Si and SiO2 — the datasheet advises applying an adhesion promoter such as HMDS. Standard substrate preparation is an oven bake at 200°C for 30 min, with HMDS for Si and SiO2 substrates.
SOURCE: ma-N 1400 Processing Guidelines
micro resist technology ma-N 1400 Processing Guidelines (ls.05.11.25.02) — Substrate preparation / Processing conditions table, p.2
How do I tune an undercut profile for lift-off with ma-N 1410?
Extend the development time while holding exposure dose and prebake constant — the manufacturer's lever for undercut, rather than underexposing. A worked 2.0 µm example (not this grade) shows undercut growing from 0.6 to 2.1 µm as develop time goes 65→120 s at fixed 550 mJ/cm² and 100°C/120 s prebake. For clean lift-off keep resist thickness 1.5–2× the metal deposition thickness; for sputtered metals add a higher prebake or a deep-UV flood at 2–5× the patterning dose.
SOURCE: ma-N 1400 Processing Guidelines
micro resist technology ma-N 1400 Processing Guidelines (ls.05.11.25.02) — lift-off guidance + worked undercut example, p.4–5
Sources & disclaimer
- micro resist technology GmbH — ma-N 1410 datasheet (ls.05.11.25.02) · accessed 2026-07-10
- https://www.microresist.de/wp-content/uploads/2022/08/NegativeResists_Flyer_Aug22.pdf — fetched and read in this same session (for the mr-dwl-40 recipe); used only to corroborate that ma-D 533/S is TMAH-based (that flyer's Developer table, p.2, lists 'ma-D 533/S (TMAH based)' for the ma-N 1400 series), since the primary datasheet referenced above states only 'aqueous alkaline development' and does not itself name the alkali type for ma-D 533/S.
- https://microresist.de/en/produkt/ma-n-1400-series/ — microresist.de states the ma-N 1400 series is an 'aromatic bisazide/novolac based resist series'; the basis for classifying ma-N 1410 as bisazide-novolak.
- Thoen et al.. Combined ultraviolet- and electron-beam lithography with Micro-Resist-Technology GmbH ma-N1400 resist. Journal of Vacuum Science & Technology B (2022). doi:10.1116/6.0001918one ma-N 1400 layer exposed by UV and 100 kV e-beam for an on-chip THz spectrometer
Manufacturer datasheet values are starting points; optimal parameters depend on your substrate, equipment and environment. Product names and trademarks belong to their respective owners. NANYTE is not affiliated with the manufacturers listed. Last updated 2026-07-26.