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AZ P4903 process recipe

AZ P4903 is the thickest grade of Merck's AZ P4000 plating resist series, rated for single coats from 10 µm to beyond 30 µm with special spin programs, for tall electroplating moulds.

https://nanyte.com/photoresists/az-p4903 · last updated 2026-09-13

At a glance
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Manufacturer
Merck KGaA (AZ Electronic Materials)
Tone
positive
Thickness
10–30 µm
Developer
AZ 400K at 1:4, or at 1:3 / AZ 421K (unbuffered) for films above 12 µm; AZ Developer 1:1 where aluminium must not be etched; AZ 340 is also listed
Applications
Electroplating / molding · Etch mask
The exposed resist dissolves in the developer; the unexposed film stays. Schematic cross-sections for AZ P4903 — feature width, film aspect ratio and sidewall angle are illustrative, not to scale.
01 / Coating

Spin coating

The manufacturer does not publish a spin curve for AZ P4903.

  • No spin curve is published for this grade — the chart on p.2 covers only P4110, P4210, P4330 and P4400.
  • Films this thick are not spun to equilibrium; the sheet gives an example coating sequence for films above 20 µm on p.5: low-speed spin at 500 rpm for 4 s, dispense at rest for 5 s, spread at 300 rpm for 3-5 s, a cast spin whose time and speed depend on the target thickness, then edge-bead removal at 400 rpm for 20 s and a 10 s dry at 400 rpm, with accelerations of 20-50 krpm/s.
  • For the cast-spin settings the sheet refers you to the AZ representative.
Adhesion
HMDS recommended — 'Substrates must be clean, dry, and free of organic residues. Oxide forming substrates (Si, etc.) should be HMDS primed prior to coating AZ P4000' (Substrate preparation, p.6). A soft bake towards 115 °C also improves adhesion to most metals.
Rehydration
Required for films thicker than 4.0 µm: hold between soft bake and exposure for typically 30-60 minutes, depending on film thickness, at 40-45 % relative humidity (Film rehydration, p.6). The p.3 reference process for a 12 µm AZ P4620 film uses a 30 min hold at 42 % RH.
02 / Bake

Soft bake

Soft bake
95–115 °C
Notes
No time is published for this grade. The process-considerations page gives 95-115 °C and calls bake conditions application specific; the typical-process box on p.1 prints the window as 90-115 °C, so the two pages differ by 5 °C at the low end, and the narrower one is carried. Temperatures towards 115 °C improve adhesion to most metals, and thicker films may need a ramped bake to stop solvent outgassing from raising bubbles.

SOURCE: Soft bake section, p.6, and typical process box, p.1, of the AZ P4000 Series technical datasheet, Rev. (08/21)

03 / Exposure

Exposure dose

AZ P4903's dose is published against film thickness, not as a single number. Read the row for the film you coat and run a dose array around it.

As published
No dose is given for AZ P4903 by name. The series table gives approximate Suss MA-200 aligner doses by film thickness: 90 mJ/cm² at 1.5 µm, 135 mJ/cm² at 3.5 µm and 800 mJ/cm² at 12 µm.
AZ P4903 — dose by film thickness · Suss MA-200 mask aligner
Film thicknessDose
1.5 µm90 mJ/cm²
3.5 µm135 mJ/cm²
12 µm800 mJ/cm²
SOURCE: 'Approximate exposure dose requirement vs. film thickness…

'Approximate exposure dose requirement vs. film thickness (Suss MA-200)' table, p.5 of the AZ P4000 Series technical datasheet, Rev. (08/21): 1.5 µm 90 mJ/cm², 3.5 µm 135 mJ/cm², 12 µm 800 mJ/cm². The table is published for the P4000 series as a whole, indexed by film thickness rather than by grade.

04 / Development

Development

Developer
AZ 400K at 1:4, or at 1:3 / AZ 421K (unbuffered) for films above 12 µm; AZ Developer 1:1 where aluminium must not be etched; AZ 340 is also listed
Dilution
AZ 400K 1:4 for better selectivity on thinner films, 1:3 for films above 12 µm; AZ Developer 1:1
Method
spray or immersion
Developer family
Buffered alkaline

Not published for this resist: Time, Rinse — characterize on-tool.

SOURCE: Developing section, p.6, and companion products, p.1, of the AZ P4000 Series technical datasheet, Rev. (08/21)

05 / Post-processing

Hard bake, etch & strip

Hard bake
100–110 °C
Etch resistance
'Excellent substrate adhesion for wet etch applications' (p.1); a 100-110 °C hard bake 'improves adhesion in wet etch or plating applications and improves pattern stability in dry etch processes' (p.6).
Stripper
AZ 300T, AZ 400T or AZ Kwik Strip (companion products, p.1).

Not published for this resist: Descum, Storage — characterize on-tool.

SOURCE: Hard bake section, p.6, and dielectric insulator table, p.5, of the AZ P4000 Series technical datasheet, Rev. (08/21)

06 / Applications

Where it's used

Practical notes from the datasheet

AZ P4903 is the most viscous P4000 grade (1650 cSt at 23 °C, three times AZ P4620) and the one for the tallest single-coat plating moulds, rated from 10 µm to beyond 30 µm. The sheet is candid that this range is reached with special coating programs rather than a spin curve, and it publishes the skeleton of one: a slow spread, a thickness-specific cast spin, and edge-bead removal at 400 rpm. Everything about processing gets slower at this thickness. Soft bake may need a ramped temperature to stop solvent outgassing from raising bubbles, the 30-60 minute rehydration hold at 40-45 % RH scales with film thickness, and the dose climbs steeply — the series table already reads 800 mJ/cm² at 12 µm on a Suss MA-200. Develop in AZ 400K 1:3 or AZ 421K, which the sheet recommends above 12 µm.

07 / Family

Grades in this family

Other grades in the AZ P4000 Series line differ mainly in coating thickness:

AZ P4000 Series — grade comparison
GradeThickness
AZ P41101–3 µm
AZ P42102–4 µm
AZ P4330-RS3–5 µm
AZ P44004–6 µm
AZ P46206.9–14.8 µm
AZ P4903 (this page)10–30 µm
08 / Sources

Sources & disclaimer

Manufacturer datasheet values are starting points; optimal parameters depend on your substrate, equipment and environment. Product names and trademarks belong to their respective owners. NANYTE is not affiliated with the manufacturers listed. Last updated 2026-09-13.

Cite this recipe

NANYTE. "AZ P4903 process recipe." NANYTE Photoresist Library. https://nanyte.com/photoresists/az-p4903. Accessed 2026-09-13.

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