https://nanyte.com/photoresists/az-nlof-2070 · last updated 2026-07-10
- Manufacturer
- Merck
- Tone
- negative
- Chemistry
- Chemically amplified
- Thickness
- 5.3–11.8 µm
- Developer
- AZ 300MIF
- Applications
- Lift-off · Etch mask
Cross-checked — two independent extractions agree.
Spin coating
AZ nLOF 2070 is spin-coated to 5.3–11.8 µm. The curve below is redrawn from the manufacturer's published data — read your target thickness off the vertical axis and take the matching spin speed as a starting point.
Data points
| Series | rpm | µm |
|---|---|---|
| AZ nLOF 2070 | 500 | 12 |
| 1000 | 11 | |
| 1500 | 9.2 | |
| 2000 | 7.8 | |
| 2500 | 7.0 | |
| 3000 | 6.3 | |
| 3500 | 5.8 | |
| 4000 | 5.3 |
Values are the manufacturer's starting points, not a guarantee; verify on your own tool. Characterize on-tool. Series digitized from a published figure were independently cross-checked by a second blind read; treat those values as approximate (±10 %).
read from figure, "SPIN CURVES (150mm Silicon)", p.1 of AZ nLOF 2000 Series Technical datasheet (Rev. 03/21) — chart plots three grades (nLOF 2070 red, nLOF 2035 yellow, nLOF 2020 blue) with an explicit color-coded legend; nLOF 2070 identified by its red 'nLOF 2070' legend entry (top curve, highest thickness at every speed) and cross-checked against the grade-specific 7.0 µm reference process (p.5, which names 'AZ nLOF 2070 (330cPs)' explicitly).
Unlike the ambiguous combined charts flagged elsewhere in this recipe set, this chart carries an explicit color-coded legend naming each of the three plotted grades individually (nLOF 2070, nLOF 2035, nLOF 2020), and the identification is cross-checked against this datasheet's own grade-specific reference-process tables (p.3, p.5), which name the exact grade and viscosity (cPs) used for each nominal film thickness. Still a figure read, not a numeric table, so visual QC is required. No dispense volume, spin ramp, or edge-bead detail is published in this datasheet.
- Adhesion
- Rehydration
Soft bake
- Soft bake
- 110 °C · 1.5 min · hotplate
- Notes
SOURCE: EXAMPLE PROCESS (7.0µm Film Thickness on Si), p.5 of AZ nLOF 2000 Series Technical datasheet (Rev. 03/21)
Exposure dose
The manufacturer does not publish a clearing dose for AZ nLOF 2070. Determine it with a dose array on your own tool.
- As published
- Post-exposure bake
- 110 °C · 1.5 min
Not published for this resist: Dose at 365 nm, Dose at 405 nm — characterize on-tool.
Development
- Developer
- AZ 300MIF
- Dilution
- undiluted (ready-to-use 0.26N / 2.38% TMAH developer; no dilution ratio stated)
- Time
- 2 min
- Method
- puddle
- Rinse
- Not published — characterize on-tool
- Developer family
- TMAH-based
SOURCE: EXAMPLE PROCESS (7.0µm Film Thickness on Si), p.5 of AZ nLOF 2000 Series Technical datasheet (Rev. 03/21): 'AZ 300MIF, 2 x 60 second puddles'
Hard bake, etch & strip
- Stripper
- AZ 400T or AZ Remover 770 (solvent-based removers), recommended per PROCESS CONSIDERATIONS > STRIPPING, p.8 of AZ nLOF 2000 Series Technical datasheet.
Not published for this resist: Hard bake, Descum, Etch resistance, Storage — characterize on-tool.
SOURCE: PROCESS CONSIDERATIONS > HARD BAKE, and HARD BAKE STABILITY for Large Pads in AZ nLOF™ 2070 (7.0µm Film Thickness), p.8 of AZ nLOF 2000 Series Technical datasheet (Rev. 03/21)
Where it's used
AZ nLOF 2070 is the ~7 µm grade of AZ's nLOF 2000 series, a chemically amplified negative photoresist purpose-built to replace older image-reversal and multi-layer lift-off processes with a single expose/PEB/develop flow and a clean undercut sidewall. As with the whole series, the post-exposure bake is required, not optional, unlike the DNQ positive resists elsewhere in this recipe set, and CD is sensitive to PEB temperature (roughly <0.04 µm/°C per the datasheet's series-level guidance). Unlike thick DNQ positive resists it needs no rehydration wait after softbake, and softbake/PEB both scale up to 90 s at this thickness versus 60 s for the thinner 2020/2035 grades. It develops in AZ 300MIF (0.26N/2.38% TMAH) via two 60-second puddle cycles rather than one. Printed features are thermally stable well above 150°C — the datasheet specifically demonstrates hard-baking large 7 µm nLOF 2070 pads at 115-130°C with stable edge profiles — which is what lets nLOF's negative-tone undercut survive a subsequent metal evaporation and lift-off step. The datasheet explicitly does not recommend nLOF 2000 series resists for use on copper substrates.
Sources & disclaimer
- Merck — AZ nLOF 2070 datasheet (Rev. (03/21)) · accessed 2026-07-10
- Gerlt et al.. Reduced Etch Lag and High Aspect Ratios by Deep Reactive Ion Etching (DRIE). Micromachines (2021). doi:10.3390/mi120505427.2 µm nLOF 2070 DRIE mask; documents its slightly angled sidewalls
- Huang et al.. Fabrication of metal air bridges for superconducting circuits using two-photon lithography. Applied Physics Letters (2025). doi:10.1063/5.02717887 µm nLOF 2070 air-bridge lift-off for superconducting qubit circuits, direct-write patterned
Manufacturer datasheet values are starting points; optimal parameters depend on your substrate, equipment and environment. Product names and trademarks belong to their respective owners. NANYTE is not affiliated with the manufacturers listed. Last updated 2026-07-10.