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AZ nLOF 2020 process recipe

AZ nLOF 2020 is the ~2 µm grade of AZ's chemically amplified negative-tone nLOF 2000 series, engineered for single-layer lift-off with a required post-exposure bake and no rehydration wait.

https://nanyte.com/photoresists/az-nlof-2020 · last updated 2026-07-10

At a glance
Manufacturer
Merck
Tone
negative
Chemistry
Chemically amplified
Thickness
1.6–4.6 µm
Exposure dose
66 mJ/cm² at 365 nm
Developer
AZ 300MIF
Applications
Lift-off · Etch mask
Etch maskSuitable forLift-offSuitable for

Cross-checked — two independent extractions agree.

01 / Coating

Spin coating

AZ nLOF 2020 is spin-coated to 1.6–4.6 µm. The curve below is redrawn from the manufacturer's published data — read your target thickness off the vertical axis and take the matching spin speed as a starting point.

Spin curve for AZ nLOF 2020: film thickness in µm against spin speed in rpm.0.002.04.01k2k3k4kSPIN SPEED (rpm)THICKNESS (µm)
Data points
AZ nLOF 2020 — film thickness (µm) by spin speed (rpm)
Seriesrpmµm
AZ nLOF 20205004.6
10003.3
15002.8
20002.4
25002.1
30001.9
35001.7
40001.6

Values are the manufacturer's starting points, not a guarantee; verify on your own tool. Characterize on-tool. Series digitized from a published figure were independently cross-checked by a second blind read; treat those values as approximate (±10 %).

read from figure, "SPIN CURVES (150mm Silicon)", p.1 of AZ nLOF 2000 Series Technical datasheet (Rev. 03/21) — chart plots three grades (nLOF 2070 red, nLOF 2035 yellow, nLOF 2020 blue) with an explicit color-coded legend; nLOF 2020 identified by its blue 'nLOF 2020' legend entry (bottom curve, lowest thickness at every speed) and cross-checked against the grade-specific 2.0 µm reference process (p.3, p.6-7, which names 'AZ nLOF 2020 (33cPs)' explicitly).

Redrawn from the manufacturer's published data — hover to read values between points, click to pin.

This grade is the bottom (lowest-thickness-at-every-speed) trace on the three-grade family chart, identified by its blue 'nLOF 2020' legend entry — and corroborated a second way, beyond the legend color alone: this datasheet's own 2.0 µm reference process names the exact resist run as 'AZ nLOF 2020 (33cPs)' (p.3, p.6-7), matching the lowest-viscosity trace on the chart. Still a figure read, not a numeric table, so visual QC is required. No dispense volume, spin ramp, or edge-bead detail is published in this datasheet.

Adhesion
HMDS recommended — Oxide-forming substrates (e.g. Si) should be HMDS primed prior to coating (PROCESS CONSIDERATIONS > SUBSTRATE PREPARATION, p.8). The 2.0 µm reference process specifies a vapor prime of HMDS 140°C/60s (p.3, p.6-7).
Rehydration
None required — p.1 TYPICAL PROCESS states 'Rehydration Hold: None', consistent with this being a chemically amplified resist, not a DNQ resist. (Source: TYPICAL PROCESS, p.1 of AZ nLOF 2000 Series Technical datasheet (Rev. 03/21))
02 / Bake

Soft bake

Soft bake
110 °C · 60 s · hotplate
Notes
Consistent across every 2.0 µm nLOF 2020 reference process in this datasheet (p.3, p.6, p.7): 110°C, 60 s, direct contact hotplate. Series-level guidance (p.8) puts soft bake temperature generally in the 100-110°C range, and recommends minimizing any delay between soft bake and exposure.

SOURCE: EXAMPLE PROCESS (2.0µm Film Thickness on Si), p.3 of AZ nLOF 2000 Series Technical datasheet (Rev. 03/21)

03 / Exposure

Exposure dose

The manufacturer publishes 66 mJ/cm² at 365 nm ("Exposure: i-line @ 66mJ/cm2 nominal (0.54NA) Nikon Stepper" — verbatim, EXAMPLE PROCESS (2.0µm Film Thickness on Si), p.3. Confirmed series-wide: "AZ nLOF 2000 requires exposure energy at the 365nm wavelength" (p.8).). Dose scales with film thickness and depends on your optics, so treat it as a starting point and run a dose array.

Dose at 365 nm
66 mJ/cm²
Dose at 405 nm
Not published — characterize on-tool
As published
"Exposure: i-line @ 66mJ/cm2 nominal (0.54NA) Nikon Stepper" — verbatim, EXAMPLE PROCESS (2.0µm Film Thickness on Si), p.3. Confirmed series-wide: "AZ nLOF 2000 requires exposure energy at the 365nm wavelength" (p.8).
Post-exposure bake
110 °C · 60 s

SOURCE: EXAMPLE PROCESS (2.0µm Film Thickness on Si), p.3 of AZ nLOF 2000 Series Technical datasheet (Rev. 03/21)

04 / Development

Development

Developer
AZ 300MIF
Dilution
undiluted (ready-to-use 0.26N / 2.38% TMAH developer; no dilution ratio stated)
Time
60 s
Method
puddle
Rinse
Not published — characterize on-tool
Developer family
TMAH-based

SOURCE: EXAMPLE PROCESS (2.0µm Film Thickness on Si), p.3 of AZ nLOF 2000 Series Technical datasheet (Rev. 03/21): 'AZ 300MIF, 60s single puddle'

05 / Post-processing

Hard bake, etch & strip

Stripper
AZ 400T or AZ Remover 770 (solvent-based removers), recommended per PROCESS CONSIDERATIONS > STRIPPING, p.8 of AZ nLOF 2000 Series Technical datasheet.

Not published for this resist: Hard bake, Descum, Etch resistance, Storage — characterize on-tool.

SOURCE: PROCESS CONSIDERATIONS > HARD BAKE, p.8 of AZ nLOF 2000 Series Technical datasheet (Rev. 03/21)

06 / Applications

Where it's used

Lift-offEtch mask

AZ nLOF 2020 is the thinnest (~2 µm) grade of AZ's chemically amplified nLOF 2000 lift-off series, and the only one of this recipe set's nLOF grades with a single stated nominal exposure dose rather than a dose-latitude sweep with no headline number: its 66 mJ/cm² i-line nominal sits comfortably inside the datasheet's own 62-74 mJ/cm² through-dose printable window, not pinned to an edge. As with the rest of the series, PEB is REQUIRED, not optional as on the DNQ positive resists elsewhere in this project, and is the step that most directly sets the negative-tone undercut lift-off profile — the datasheet's own CD-vs-PEB-temperature data (measured on the related 2035 grade) puts the sensitivity at roughly <0.04 µm/°C, so a few degrees of hotplate drift shows up as a real dimensional shift. Develop is a single 60 s AZ 300MIF puddle, simpler than the two-puddle cycle the thicker 2070 grade needs to fully clear its film. No rehydration wait is needed after softbake, unlike the thick DNQ positive resists elsewhere in this set, and the cured film's >150°C thermal stability is what lets the undercut profile survive a subsequent metal evaporation and lift-off step. The datasheet explicitly does not recommend the nLOF 2000 series for use on copper substrates.

07 / Sources

Sources & disclaimer

Research using this resist
  1. Herth et al.. Performances of the Negative Tone Resist AZnLOF 2020 for Nanotechnology Applications. IEEE Transactions on Nanotechnology (2012). doi:10.1109/TNANO.2012.2196802
    The most-cited nLOF 2020 characterization: 50 nm lines at 100 nm pitch by e-beam
  2. Lilak et al.. Spoken Digit Classification by In-Materio Reservoir Computing With Neuromorphic Atomic Switch Networks. Frontiers in Nanotechnology (2021). doi:10.3389/fnano.2021.675792
    Lift-off Pt grid for a neuromorphic atomic-switch-network chip

Manufacturer datasheet values are starting points; optimal parameters depend on your substrate, equipment and environment. Product names and trademarks belong to their respective owners. NANYTE is not affiliated with the manufacturers listed. Last updated 2026-07-10.

Cite this recipe

NANYTE. "AZ nLOF 2020 process recipe." NANYTE Photoresist Library. https://nanyte.com/photoresists/az-nlof-2020. Accessed 2026-07-10.

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