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PMGI SF6 process recipe

PMGI SF6 is a non-photoimageable, polydimethylglutarimide-based ancillary resist from MicroChem's PMGI SF series, used as the undercut/sacrificial layer beneath a conventional imaging resist in bi-layer lift-off processing. It is never exposed; its dissolution rate (and the resulting undercut geometry) is instead controlled by soft-bake temperature.

https://nanyte.com/photoresists/pmgi-sf-6 · last updated 2026-07-10

At a glance
Manufacturer
MicroChem
Tone
Not photoimageable (underlayer)
Chemistry
Ancillary (not photoimageable)
Thickness
0.3–0.5 µm
Exposure dose
Not exposed — dissolves in developer
Developer
Metal-ion-free (MIF) developers, specifically 0.26N and 0.24N MIF per the Product Selection Guide's "SF" column (SF6's category); the SF category is NOT starred for metal-ion-bearing (MIB) compatibility in that same guide (only LOR B is). General text elsewhere states the line is "optimized for use with various metal ion free and metal ion containing developers," a broader claim than the SF-specific selection-guide row.
Applications
Lift-off · MEMS structural
Lift-offSuitable for

Cross-checked — two independent extractions agree.

01 / Coating

Spin coating

PMGI SF6 is spin-coated to 0.3–0.5 µm. The curve below is redrawn from the manufacturer's published data — read your target thickness off the vertical axis and take the matching spin speed as a starting point.

Spin curve for PMGI SF6: film thickness in µm against spin speed in rpm.0.000.200.400.601k2k3k4kSPIN SPEED (rpm)THICKNESS (µm)
Data points
PMGI SF6 — film thickness (µm) by spin speed (rpm)
Seriesrpmµm
PMGI SF610000.48
15000.39
20000.34
25000.30
30000.28
35000.27
40000.26

Values are the manufacturer's starting points, not a guarantee; verify on your own tool. Characterize on-tool. Series digitized from a published figure were independently cross-checked by a second blind read; treat those values as approximate (±10 %).

read from figure ("Spin Speed vs Thickness - Intermediate Films"), p.5 of the "LOR and PMGI Resists" Technical Data section. Five traces share this chart (legend: LOR 7B - open square; LOR 5A - open circle; LOR 5B - x; "LOR 3A, LOR 3B" combined - open diamond; SF6 - open triangle). The SF6 trace was identified unambiguously by its own dedicated triangle-marker legend entry, distinct from the explicitly-combined 'LOR 3A, LOR 3B' diamond series (which was NOT used for this recipe per the no-combined-trace rule) and from the other individually-named LOR grades. SF6 is the bottommost (thinnest) of the five traces at every plotted speed and is also the only one of the five sampled at 500 rpm intervals (1000-4000 rpm, 7 points) rather than 1000 rpm intervals (4 points) used for the other four traces on the same chart.

Redrawn from the manufacturer's published data — hover to read values between points, click to pin.

General coating guidance (p.2, applies to the LOR/PMGI line as a whole, not SF6-specific numbers): spin speeds between 2,500 and 4,500 rpm give maximum coating uniformity; higher speeds for smaller substrates, lower for larger or topographically irregular substrates. Recommended Coating Parameters box (p.5, generic to the line): dispense volume 5 ml (150 mm Si wafer), dispense mode dynamic 3-5 s, dispense spin speed 300-500 rpm, acceleration 10,000 rpm/second, terminal spin speed 3,000 rpm, spin time 45 seconds, edge-bead remover MicroChem EBR PG (acetone and conventional-resist edge-bead removers are explicitly NOT recommended with LOR/PMGI). None of this coating-parameter box is stated as SF6-specific - it is a line-wide recommendation.

Adhesion
HMDS not required — "Primers such as HMDS (hexamethyldisilazane) are typically NOT required to promote adhesion with PMGI/LOR products when used as recommended." (Substrate preparation, p.2). Recommended substrate prep instead: solvent clean or dilute-acid rinse, followed by DI water rinse, then a dehydration bake at 200°C for 5 minutes on a contact hotplate or 30 minutes in a convection oven. LOR/PMGI is stated to have superior adhesion to Si, NiFe, GaAs, InP and other III-V materials (p.1 Benefits list).
02 / Bake

Soft bake

Soft bake
Not published — characterize on-tool
Notes
Recommended bake TEMPERATURE RANGE is 150-200°C (some PMGI products may be baked up to 250°C) - a range, not a single value, so temp_c is left null. Pre-bake (soft-bake) temperature is stated as having the single greatest influence on undercut rate, more so than pre-bake time, the patterning resist's exposure dose, developer choice, develop mode, or develop time. Hot plates are preferred; convection ovens are also compatible. No single recommended temperature or time is stated for SF6 specifically - the document instead recommends a matrix design varying pre-bake temperature and time for process fine-tuning per grade. Separately, Table 1's optical-constant (n/k) measurements for the SF family (which includes SF6) were taken on samples soft-baked at 180°C for 3 minutes, but this is stated as the optical-measurement condition, not a general process recommendation, so it is not used to populate temp_c/time_s either.

SOURCE: Soft-bake/Prebake Process section, p.3 ("The recommended bake temperature range is 150°C - 200°C..."); Table 1 footnote, p.5 ("Products were soft-baked at 180°C for 3 min")

03 / Exposure

Exposure

PMGI SF6 is not photoimageable. It is not exposed at all — it is coated beneath an imaged top resist and undercut laterally during development. See the development step below.

04 / Development

Development

Developer
Metal-ion-free (MIF) developers, specifically 0.26N and 0.24N MIF per the Product Selection Guide's "SF" column (SF6's category); the SF category is NOT starred for metal-ion-bearing (MIB) compatibility in that same guide (only LOR B is). General text elsewhere states the line is "optimized for use with various metal ion free and metal ion containing developers," a broader claim than the SF-specific selection-guide row.
Dilution
0.26N MIF (2.38% TMAH) and 0.24N MIF (2.2% TMAH w/surfactant) are both marked compatible for the "SF" category in the Product Selection Guide (p.6); no single dilution is singled out as SF6's own specific recommendation.
Developer family
TMAH-based

Not published for this resist: Time, Method, Rinse — characterize on-tool.

SOURCE: Development Process section, p.4; Product Selection Guide ("Developer Compatibility" rows, "SF" column), p.6

05 / Post-processing

Hard bake, etch & strip

Stripper
MicroChem Remover PG. "Use MicroChem's Remover PG to remove the bi-layer resist stack. Removal rate of LOR/PMGI is dependent upon soft-bake temperature of the LOR/PMGI product and remover bath temperature. As a baseline process, use Remover PG in two tanks: at 60°C for 30 minutes in the first tank and rinse at 60°C in the second tank. Ultrasonic action will improve the resist removal efficiency." (Lift-Off Process, p.4). A separate category-level chart (Figure 9, p.4, labeled "SF Series" - not SF6 individually) shows removal rate in Remover PG rising with bath temperature (40°C bath removes faster than 25°C) and falling as the PMGI's own soft-bake temperature increases (150 -> 180 -> 200°C); exact rates were not extracted here since the chart is not SF6-specific and its bar-scale precision is limited.
Storage
"Store upright in original sealed containers in a dry area between 4 and 27°C (40-80°F). Keep away from sources of ignition, light, heat, oxidants, acids, and reducers. Do not use after the expiration date (1 year from date of manufacture)." (LOR/PMGI Storage, p.7)

Not published for this resist: Hard bake, Descum, Etch resistance — characterize on-tool.

06 / Applications

Where it's used

Lift-offMEMS structural

PMGI SF6 belongs to MicroChem's PMGI SF series (SF2/SF3/SF5/SF6/SF9/SF11, plus a slower-dissolving 'SF Slow' variant), a polydimethylglutarimide-based ancillary layer that is never itself exposed for patterning: in the standard bi-layer lift-off flow it is coated and soft-baked first, then a conventional imaging resist is coated, exposed and developed on top, and the same develop step dissolves an undercut into the PMGI beneath the imaging-resist pattern. Its dissolution rate - and therefore the achievable undercut geometry - is controlled primarily by SOFT-BAKE TEMPERATURE rather than by exposure or develop time; this datasheet's own quantified bake-temperature-vs-undercut-rate curves (Figures 5a/5b) are published only for LOR 10B, not for SF6, so no grade-specific undercut-rate number is reported here - a matrix design varying pre-bake temperature and time is explicitly recommended instead for fine-tuning any given grade. HMDS priming is explicitly NOT required for PMGI/LOR adhesion, and the document notes the overlying imaging resist can be applied directly over PMGI without barrier layers or a plasma descum step. As a PMGI-branded (not LOR-branded) product, SF6 is also compatible with an optional 'Cap-On' process in which the PMGI layer is separately deep-UV (240-290 nm) flood exposed to obtain straighter sidewall profiles - the document ties this option to PMGI generically rather than to SF6 specifically, so it is noted here as available but not confirmed SF6-specific. Stripping uses MicroChem Remover PG (baseline two-tank 60°C/30 min process); actual removal rate depends on the layer's own soft-bake temperature and the remover bath temperature.

07 / Sources

Sources & disclaimer

Research using this resist
  1. Cord et al.. Robust shadow-mask evaporation via lithographically controlled undercut. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena (2006). doi:10.1116/1.2375090
    The Dolan-bridge PMMA/PMGI undercut process used worldwide for superconducting-qubit Josephson junctions.

Manufacturer datasheet values are starting points; optimal parameters depend on your substrate, equipment and environment. Product names and trademarks belong to their respective owners. NANYTE is not affiliated with the manufacturers listed. Last updated 2026-07-10.

Cite this recipe

NANYTE. "PMGI SF6 process recipe." NANYTE Photoresist Library. https://nanyte.com/photoresists/pmgi-sf-6. Accessed 2026-07-10.

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