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LOR 5A process recipe

LOR 5A is a mid-thickness grade in MicroChem/Kayaku's LOR series of PMGI-type (polydimethylglutarimide) lift-off underlayers: it is spin-coated beneath a conventional photoresist, is never itself exposed, and its develop-time dissolution — governed chiefly by pre-bake temperature — produces the re-entrant, undercut sidewall profile that enables clean metal lift-off.

https://nanyte.com/photoresists/lor-5a · last updated 2026-07-10

At a glance
Manufacturer
MicroChem (MCC) — now Kayaku Advanced Materials
Tone
Not photoimageable (underlayer)
Chemistry
Ancillary (not photoimageable)
Thickness
0.5–1.0 µm
Exposure dose
Not exposed — dissolves in developer
Developer
Document does not name a specific commercial developer product for LOR 5A; general text states LOR/PMGI is compatible with both metal-ion-free (MIF) and metal-ion-bearing (MIB) developer chemistries.
Applications
Lift-off
Lift-offSuitable for

Cross-checked — two independent extractions agree.

01 / Coating

Spin coating

LOR 5A is spin-coated to 0.5–1.0 µm. The curve below is redrawn from the manufacturer's published data — read your target thickness off the vertical axis and take the matching spin speed as a starting point.

Spin curve for LOR 5A: film thickness in µm against spin speed in rpm.0.000.501.01.52.01k2k3k4kSPIN SPEED (rpm)THICKNESS (µm)
Data points
LOR 5A — film thickness (µm) by spin speed (rpm)
Seriesrpmµm
LOR 5A10000.98
20000.67
30000.55
40000.47

Values are the manufacturer's starting points, not a guarantee; verify on your own tool. Characterize on-tool. Series digitized from a published figure were independently cross-checked by a second blind read; treat those values as approximate (±10 %).

read from figure "Spin Speed vs Thickness - Intermediate Films", p.5 of MicroChem "LOR and PMGI Resists" datasheet. This figure plots five grades: LOR 7B (blue square), LOR 5A (red circle), LOR 5B (green x), a COMBINED 'LOR 3A, LOR 3B' trace (black diamond), and SF6 (purple triangle). LOR 5A was identified and read as the red-circle series specifically because it has its OWN distinct legend entry ('LOR 5A', not grouped with any other grade) and its own separate curve, clearly offset above the neighboring LOR 5B (green) and well above the combined LOR 3A/3B (black) trace in the same chart — i.e. this is NOT the combined multi-grade series that caused a misread on a sibling LOR 3A recipe in this project. Only 4 markers are plotted for LOR 5A (1000/2000/3000/4000 rpm); no 1500/2500/3500 rpm points exist for this series (unlike SF6, which has more points in the same figure). Read from a rendered PNG crop of the chart at native resolution; an eyeball read, ±10-15% plausible per-point error, not a numeric table. Chart footnote (p.5): 'Products were soft-baked at 180 ºC for 3 min' — the measurement condition for the plotted films, not a stated LOR-5A-specific process bake recommendation.

Redrawn from the manufacturer's published data — hover to read values between points, click to pin.

Only 4 spin-speed points (1000/2000/3000/4000 rpm) are plotted for LOR 5A; extrapolation below 1000 or above 4000 rpm is not supported by the chart. The page's boxed 'RECOMMENDED COATING PARAMETERS' (dispense 5 ml on a 150 mm Si wafer, dynamic dispense 3-5 s at 300-500 rpm, acceleration 10,000 rpm/s, terminal spin speed 3,000 rpm, spin time 45 s, EBR PG for edge-bead removal) appears once for the whole Technical Data page (p.5) and is not stated to be grade-specific, so it is recorded here as general page-level guidance rather than a confirmed LOR-5A parameter. Separately, general text (p.2) states spin speeds of 2,500-4,500 rpm give 'maximum coating uniformity' across the LOR/PMGI line, with lower speeds favored for larger or irregular/topographic substrates.

Adhesion
HMDS not required — "Primers such as HMDS (hexamethyldisilazane) are typically NOT required to promote adhesion with PMGI/LOR products when used as recommended." LOR/PMGI is described as exhibiting 'excellent adhesion to most semiconductor, GaAs, and thin-film head substrates.' A dehydration bake (200°C, 5 min contact hot plate, or 30 min convection oven) is recommended before coating if maximum process reliability is needed. Source: "Substrate preparation", p.2.
02 / Bake

Soft bake

Soft bake
Not published — characterize on-tool
Notes
THE BAKE TEMPERATURE IS THE UNDERCUT CONTROL, and the document gives only ranges, not an LOR-5A-specific scalar. General guidance (p.3): 'The recommended bake temperature range is 150°C - 200°C, although some PMGI products may be baked to 250°C... Hot plates are the preferred tool for the pre-bake; however, LOR/PMGI resists are also compatible with convection oven processes... a matrix design varying pre-bake temperature and time is recommended for process fine-tuning.' Separately, the Technical Data chart footnote (p.5) that includes LOR 5A's own spin curve states those plotted films 'were soft-baked at 180 ºC for 3 min' (180 s) — this is the measurement condition for the chart, not a stated process recommendation specific to LOR 5A. No grade-specific bake-temperature-vs-undercut-rate curve is published for LOR 5A: Figures 5a/5b (undercut rate vs. bake temperature and vs. bake time) are explicitly labeled 'LOR 10B' only, and Figure 6's dissolution-rate comparison groups grades only at the family level (LOR_A / LOR_B / SF / SF Slow bars, no per-grade numbers) at a single condition (180°C).

SOURCE: p.3 ("Soft-bake/Prebake Process") and p.5 chart footnote, MicroChem "LOR and PMGI Resists" datasheet

03 / Exposure

Exposure

LOR 5A is not photoimageable. It is not exposed at all — it is coated beneath an imaged top resist and undercut laterally during development. See the development step below.

04 / Development

Development

Developer
Document does not name a specific commercial developer product for LOR 5A; general text states LOR/PMGI is compatible with both metal-ion-free (MIF) and metal-ion-bearing (MIB) developer chemistries.

Not published for this resist: Dilution, Time, Method, Rinse — characterize on-tool.

SOURCE: p.1 ("Compatible with TMAH and metal-ion bearing developers"), p.4 ("Development Process"), and p.6 Product Selection Guide (Developer Compatibility row), MicroChem "LOR and PMGI Resists" datasheet

05 / Post-processing

Hard bake, etch & strip

Stripper
Remover PG (MicroChem/Kayaku). Baseline two-tank process: 60°C for 30 minutes in the first tank, then a 60°C rinse in the second tank; ultrasonic agitation improves removal efficiency. Actual time depends on pre-bake conditions, step coverage, and resist profile. Removal rate is reported as a function of soft-bake temperature and remover-bath temperature (Figure 9, p.4), but that figure is labeled for the 'SF Series', not LOR 5A specifically. Source: "Lift-Off Process", p.4.
Storage
"Store upright in original sealed containers in a dry area between 4 and 27°C (40-80°F). Keep away from sources of ignition, light, heat, oxidants, acids, and reducers. Do not use after the expiration date (1 year from date of manufacture)." Source: "LOR/PMGI Storage", p.7 (general to all LOR/PMGI products; not stated to be LOR-5A-specific, but no grade-specific storage guidance exists in the document).

Not published for this resist: Hard bake, Descum, Etch resistance — characterize on-tool.

06 / Applications

Where it's used

Lift-off

LOR 5A is an ancillary, non-photoimageable PMGI-type (polydimethylglutarimide) underlayer: it is spin-coated beneath a conventional photoresist and never exposed itself, so it carries no dose, tone, or lithographic pattern of its own — only the imaging resist above it is exposed and developed. The undercut geometry that enables clean metal lift-off is a develop-time and pre-bake-temperature-controlled dimension, not a lithographic one: the datasheet states pre-bake temperature has 'the greatest influence on undercut rate,' with pre-bake time, the imaging resist's own exposure dose, developer choice, develop mode, and develop time as secondary factors. No grade-specific bake-temperature-vs-dissolution-rate curve is published for LOR 5A — the only such curves in this document (Figures 5a/5b) are for LOR 10B — so LOR 5A's own undercut rate cannot be read off this datasheet and should be characterized on-tool. In practice, too little undercut leaves an insufficient re-entrant profile, so evaporated or sputtered metal bridges over the sidewall and lift-off fails or leaves ragged edges; too much undercut can collapse the unsupported span of imaging resist over the gap, degrading pattern fidelity — both failure modes are tuned via pre-bake temperature/time and develop time, not exposure.

07 / Sources

Sources & disclaimer

Research using this resist
  1. Chen. A lift-off process for high resolution patterns using PMMA/LOR resist stack. Microelectronic Engineering (2004). doi:10.1016/j.mee.2004.02.053
    Sub-100 nm lift-off geometry demonstrated with a PMMA/LOR resist bilayer.

Manufacturer datasheet values are starting points; optimal parameters depend on your substrate, equipment and environment. Product names and trademarks belong to their respective owners. NANYTE is not affiliated with the manufacturers listed. Last updated 2026-07-10.

Cite this recipe

NANYTE. "LOR 5A process recipe." NANYTE Photoresist Library. https://nanyte.com/photoresists/lor-5a. Accessed 2026-07-10.

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