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mr-DWL 40 process recipe

mr-DWL 40 is the mid-thickness grade of micro resist technology's mr-DWL negative-tone resist series, formulated for 405 nm direct laser writing (DLW) and two-photon polymerization (2PP), sold ready-to-use for coatings from 20 to 100 µm.

https://nanyte.com/photoresists/mr-dwl-40 · last updated 2026-07-26

At a glance
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Manufacturer
micro resist technology GmbH
Tone
negative
Chemistry
Epoxy (SU-8 type)
Thickness
20–100 µm
Developer
mr-Dev 600
Applications
Etch mask · Electroplating / molding · General prototyping · MEMS structural
The exposed resist stays after development; the unexposed film dissolves. Schematic cross-sections for mr-DWL 40 — feature width, film aspect ratio and sidewall angle are illustrative, not to scale.
01 / Coating

Spin coating

The manufacturer does not publish a spin curve for mr-DWL 40.

  • No spin-speed-vs-thickness table or figure is published for mr-DWL anywhere in this flyer — only the stated achievable film-thickness range per grade.
  • No accel, dispense, or edge-bead guidance is given either.
  • This is expected: the source is a multi-series marketing flyer, not a technical datasheet.
Adhesion
HMDS not required — Not addressed in this flyer.
02 / Bake

Soft bake

Soft bake
Not published — characterize on-tool
03 / Exposure

Exposure dose

mr-DWL 40 is sold for 405 nm direct laser writing, but no dose is published at any wavelength — only a qualitative claim of high sensitivity above 400 nm, and an absorption curve with no dose calibration on its axis. Run a dose array on your own tool to land the working dose.

Not published for this resist: Dose at 365 nm, Dose at 405 nm — characterize on-tool.

04 / Development

Development

Developer
mr-Dev 600
Developer family
Solvent

Not published for this resist: Dilution, Time, Method, Rinse — characterize on-tool.

SOURCE: mr-DWL table, p.4 of Negative Photoresists flyer

05 / Post-processing

Hard bake, etch & strip

Etch resistance
"Etch mask for wet and dry etch processes" (Main applications, mr-DWL section, p.4).

Not published for this resist: Hard bake, Descum, Stripper, Storage — characterize on-tool.

06 / Applications

Where it's used

Practical notes from the datasheet

mr-DWL 40 is the mid-thickness grade of micro resist technology's mr-DWL negative-tone resist series, formulated for 405 nm exposure in direct laser writing (DLW) and two-photon polymerization (2PP) tools, and sold ready-to-use for coatings from 20 to 100 µm. The only source retrievable for this SKU is a multi-series marketing flyer rather than a full technical datasheet, so process parameters a TDS would normally publish — softbake, exposure dose, post-exposure bake, and a spin-speed-vs-thickness curve — are not stated in it; mr-DWL's own TDS is served behind a non-guessable microresist.de download link and was not retrievable. The flyer names mr-Dev 600 as the developer (solvent-based) but gives no dilution, time, or method. Because mr-DWL is marketed specifically for 405 nm direct-write exposure, its h-line dose could in principle be the operationally relevant one, but no dose value in mJ/cm² is published for this SKU in this document, so no dose is quoted for it. Chemistry classified as epoxy from microresist.de's description of mr-DWL as chemically amplified negative tone sharing SU-8's advantageous properties, corroborated by peer-reviewed literature grouping SU-8 and mr-DWL as epoxy-based photoresists.

07 / Sources

Sources & disclaimer

Research using this resist
  1. Sato et al.. Pneumatic Microballoons for Active Control of the Vibration-Induced Flow. Micromachines (2023). doi:10.3390/mi14112010
    Builds the master mold for a pneumatic microballoon actuator's air-channel structures in mr-DWL 40, patterned by direct lithography on a DL-1000 maskless writer, then replicates the mold in PDMS.
  2. Dupuit et al.. Portrait of intense communications within microfluidic neural networks. Scientific Reports (2023). doi:10.1038/s41598-023-39477-9
    Lithographs neuron culture chambers and microchannels in two mr-DWL layers of 40 um and 5 um using backside alignment, hard-bakes the mold at 180 C, and casts PDMS from it to guide cortical network growth.
  3. Bhujbal et al.. Effect of design geometry, exposure energy, cytophilic molecules, cell type and load in fabrication of single-cell arrays using micro-contact printing. Scientific Reports (2020). doi:10.1038/s41598-020-72080-w
    Maps how exposure energy on an MLA-150 maskless aligner changes the transferred feature dimensions of an mr-DWL negative resist, then stamps the resulting PDMS moulds into single-cell arrays.

Manufacturer datasheet values are starting points; optimal parameters depend on your substrate, equipment and environment. Product names and trademarks belong to their respective owners. NANYTE is not affiliated with the manufacturers listed. Last updated 2026-07-26.

Cite this recipe

NANYTE. "mr-DWL 40 process recipe." NANYTE Photoresist Library. https://nanyte.com/photoresists/mr-dwl-40. Accessed 2026-07-26.

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