https://nanyte.com/photoresists/ma-n-2410 · last updated 2026-09-24
- Manufacturer
- micro resist technology GmbH
- Tone
- negative
- Thickness
- 1 µm
- Applications
- Etch mask
- Substrate
- Resist
- Exposed
Spin coating
The manufacturer does not publish a spin curve for ma-N 2410.
- One tabulated point, not a sweep: 1.0 µm at 3000 rpm for 30 s.
- The sheet does plot film thickness against spin speed from 1000 to 6000 rpm with a trace for each of the four grades, so the shape is shown, but that chart carries no numeric table — only axis ticks on a 0-2.0 µm scale and the legend strings — so no values are published from it.
- Accel, dispense volume and edge-bead removal are not published here.
- Adhesion
- Not addressed in this product-information sheet.
Soft bake
- Soft bake
- Not published — characterize on-tool
Exposure dose
Doses are published for electron-beam exposure, from 20-45 µC/cm² at 10 keV up to 240-550 µC/cm² at 100 keV, and for deep UV at 248, 254 or 266 nm at 2-20 mJ/cm². No dose is published for g-line (436 nm), h-line (405 nm) or i-line (365 nm). Run a dose array on your own tool to land the working dose.
Not published for this resist: Dose at 365 nm, Dose at 405 nm — characterize on-tool.
Development
Not published for this resist: Developer, Dilution, Time, Method, Rinse — characterize on-tool.
SOURCE: Unique features, p.1
Hard bake, etch & strip
- Etch resistance
- "High wet and dry etch resistance" (Unique features, p.1); the sheet lists masking for Si, SiO2, Si3N4 and metals among its applications.
Not published for this resist: Hard bake, Descum, Stripper, Storage — characterize on-tool.
Where it's used
Practical notes from the datasheet
ma-N 2410 is the 1 µm grade of a negative series built for electron-beam and deep-UV lithography, and that is the thing to check before specifying it: the published doses are in µC/cm² by beam energy, plus a deep-UV band at 248, 254 or 266 nm — there is no figure for g-line, h-line (the 405 nm line a direct-write tool uses) or i-line, and the absorption data on the sheet shows the resist going transparent above roughly 350 nm. On a UV direct-write tool it will not pattern. Where a beam is available the series resolves down to 30 nm, develops in aqueous alkali, and is offered as an etch mask against Si, SiO2, Si3N4 and metals, as an ion-implantation mask, and for cutting nanoimprint stamps. Dose climbs steeply with beam energy, from 20-45 µC/cm² at 10 keV to 240-550 µC/cm² at 100 keV, and those bands are wide enough that a dose array is the only sensible way to land on a working value. Softbake, development time and removal are not covered in this sheet.
Troubleshooting
Common failure modes for ma-N 2410, answered from the manufacturer's datasheet and application notes. These are starting points — your substrate, tooling and environment shift the specifics, so calibrate on-tool.
ma-N 2410 doesn't pattern on my i-line or 405 nm tool — is the dose just too low?
No. ma-N 2410 is an electron-beam and deep-UV resist. Micro resist technology publishes doses for e-beam and for deep UV at 248, 254 or 266 nm only (2–20 mJ/cm²), and no dose for g-, h- or i-line. The absorption plot on the same sheet shows the unexposed film becoming nearly transparent above roughly 350 nm, so raising the dose on a 365 nm or 405 nm source won't fix it. Move the job to an e-beam or deep-UV exposure.
SOURCE: ma-N 2400 Negative Tone Photoresist Series product information…
ma-N 2400 Negative Tone Photoresist Series product information (micro resist technology, 2024) — Technical data table and absorption-coefficient plot, p.1
My ma-N 2410 e-beam dose from one tool doesn't transfer to another — why?
Dose depends strongly on beam energy. The series table runs from 20–45 µC/cm² at 10 keV to 80–200 at 20 keV, 95–300 at 30 keV, 150–350 at 50 keV and 240–550 µC/cm² at 100 keV. The bands are quoted for the whole series, not per grade, and are wide, so a 1 µm ma-N 2410 film needs its own dose array at your accelerating voltage. Don't scale a dose across energies from another tool.
SOURCE: ma-N 2400 Negative Tone Photoresist Series product information…
ma-N 2400 Negative Tone Photoresist Series product information (micro resist technology, 2024) — Technical data table, p.1
I need a thinner or thicker film than 1 µm — should I respin ma-N 2410 or change grade?
The only tabulated point for ma-N 2410 is 1000 nm at 3000 rpm for 30 s. The spin chart on the same sheet shows it thinning from about 1.7 µm at 1000 rpm to roughly 0.7 µm at 6000 rpm, with no numeric table behind the curve, so confirm any off-nominal speed by measurement. For films well below that, the series offers ma-N 2405 (500 nm), 2403 (300 nm) and 2401 (100 nm), all at the same 3000 rpm / 30 s. Development is aqueous alkaline; bake and developer details are not published on this sheet.
SOURCE: ma-N 2400 Negative Tone Photoresist Series product information…
ma-N 2400 Negative Tone Photoresist Series product information (micro resist technology, 2024) — Technical data table, spin-speed chart and Unique features, p.1
Sources & disclaimer
- micro resist technology GmbH — ma-N 2410 datasheet (2024) · accessed 2026-09-10
Manufacturer datasheet values are starting points; optimal parameters depend on your substrate, equipment and environment. Product names and trademarks belong to their respective owners. NANYTE is not affiliated with the manufacturers listed. Last updated 2026-09-24.