https://nanyte.com/photoresists/ma-n-2410 · last updated 2026-09-10
- Manufacturer
- micro resist technology GmbH
- Tone
- negative
- Thickness
- 1 µm
- Applications
- Etch mask
- Substrate
- Resist
- Exposed
Spin coating
The manufacturer does not publish a spin curve for ma-N 2410.
- One tabulated point, not a sweep: 1.0 µm at 3000 rpm for 30 s.
- The sheet does plot film thickness against spin speed from 1000 to 6000 rpm with a trace for each of the four grades, so the shape is shown, but that chart carries no numeric table — only axis ticks on a 0-2.0 µm scale and the legend strings — so no values are published from it.
- Accel, dispense volume and edge-bead removal are not published here.
- Adhesion
- HMDS not required — Not addressed in this product-information sheet.
Soft bake
- Soft bake
- Not published — characterize on-tool
Exposure dose
Doses are published for electron-beam exposure, from 20-45 µC/cm² at 10 keV up to 240-550 µC/cm² at 100 keV, and for deep UV at 248, 254 or 266 nm at 2-20 mJ/cm². No dose is published for g-line (436 nm), h-line (405 nm) or i-line (365 nm). Run a dose array on your own tool to land the working dose.
Not published for this resist: Dose at 365 nm, Dose at 405 nm — characterize on-tool.
Development
Not published for this resist: Developer, Dilution, Time, Method, Rinse — characterize on-tool.
SOURCE: Unique features, p.1
Hard bake, etch & strip
- Etch resistance
- "High wet and dry etch resistance" (Unique features, p.1); the sheet lists masking for Si, SiO2, Si3N4 and metals among its applications.
Not published for this resist: Hard bake, Descum, Stripper, Storage — characterize on-tool.
Where it's used
Practical notes from the datasheet
ma-N 2410 is the 1 µm grade of a negative series built for electron-beam and deep-UV lithography, and that is the thing to check before specifying it: the published doses are in µC/cm² by beam energy, plus a deep-UV band at 248, 254 or 266 nm — there is no figure for g-line, h-line (the 405 nm line a direct-write tool uses) or i-line, and the absorption data on the sheet shows the resist going transparent above roughly 350 nm. On a UV direct-write tool it will not pattern. Where a beam is available the series resolves down to 30 nm, develops in aqueous alkali, and is offered as an etch mask against Si, SiO2, Si3N4 and metals, as an ion-implantation mask, and for cutting nanoimprint stamps. Dose climbs steeply with beam energy, from 20-45 µC/cm² at 10 keV to 240-550 µC/cm² at 100 keV, and those bands are wide enough that a dose array is the only sensible way to land on a working value. Softbake, development time and removal are not covered in this sheet.
Sources & disclaimer
- micro resist technology GmbH — ma-N 2410 datasheet (2024) · accessed 2026-09-10
Manufacturer datasheet values are starting points; optimal parameters depend on your substrate, equipment and environment. Product names and trademarks belong to their respective owners. NANYTE is not affiliated with the manufacturers listed. Last updated 2026-09-10.