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KL IR 15 process recipe

A dual-tone image-reversal photoresist, processed as either positive or negative in i-line, g-line and broadband applications, 1.2-2.6 µm film thickness. In negative mode the reversal-bake temperature is the most process-critical parameter.

https://nanyte.com/photoresists/kl-ir · last updated 2026-09-28

At a glance
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Manufacturer
KemLab, Inc.
Tone
image reversal
Chemistry
DNQ-novolak
Thickness
1.2–2.6 µm
Exposure dose
120 mJ/cm² (broadband, image-reversal mode)
Developer
0.26N TMAH
Applications
Image reversal · General prototyping
The reversal bake fixes the exposed pattern and the flood exposure makes everything else soluble, so the developed image is inverted — typically with an undercut sidewall. Schematic cross-sections for KL IR 15 — feature width, film aspect ratio and sidewall angle are illustrative, not to scale.
—01 / Coating

Spin coating

Spin curve for KL IR 15: film thickness in µm against spin speed in rpm.1.01.52.02.53.01k2k3k4k5kSPIN SPEED (rpm)THICKNESS (µm)
Data points
KL IR 15 — film thickness (µm) by spin speed (rpm)
Seriesrpmµm
KL IR 1510002.6
20001.8
30001.4
40001.3
50001.1

Values are the manufacturer’s starting points, not a guarantee — characterize on your own tool. Series digitized from a published figure are approximate (±10 %).

read from figure captioned 'Spin Curve' (referenced in text as Figure 3), p.2 of KL IR 15 TDS. Single unambiguous curve — only one grade/SKU is plotted, no multi-curve legend to disambiguate. Axis range (1.00-2.80 µm, 0-6000 rpm) and curve shape are consistent with the stated 1.2-2.6 µm film-thickness range.

Redrawn from the manufacturer's published data — hover to read between points, click to pin.
  • Spin curve determined on 6-inch Si with static dispense of ~4 mL of KL IR 15 resist (TDS p.2, Coat).
  • No spin ramp/accel profile or edge-bead-removal step is published.
  • A closely related sibling SKU, KL IR LO 15 (lift-off variant, separate TDS, Rev 10-2023), publishes a similarly-shaped spin curve on the same axis scale but is a distinct product literature and was not used to source any value here.
Adhesion
HMDS recommended — HMDS primer is recommended with oxide-forming substrates (Si, etc.); KL IR adheres to silicon, copper, gold, glass, aluminum and chromium (TDS p.1, Substrate Preparation, in both the Negative and Positive Resist Mode tables).
—02 / Bake

Soft bake

Soft bake
105 °C · 1.5 min · hotplate
Notes
Single softbake condition (105°C, 90 sec) is common to both positive-mode and negative-mode processing guidelines (TDS p.1-2).
SOURCE: Negative Resist Mode Processing Guidelines table, p.1, and…

Negative Resist Mode Processing Guidelines table, p.1, and Positive Resist Mode Processing Guidelines table, p.2 of KL IR 15 TDS

—03 / Exposure

Exposure dose

The manufacturer publishes 120 mJ/cm² (broadband, image-reversal mode). Dose scales with film thickness and depends on your optics, so treat it as a starting point and run a dose array.

As published
In reversal (negative) mode the image exposure is 120 mJ/cm² broadband before the reversal bake; used as a straight positive resist the only published figure is an approximate 70 mJ/cm² on a 1.5 µm film.
Reversal bake
130 °C · 2 min
Flood exposure
150 mJ/cm²

Not published for this resist: Dose at 365 nm, Dose at 405 nm — characterize on-tool.

SOURCE: Negative Resist Mode Processing Guidelines, p.1: 'Exposure Broadband (120 mJ/cm2)'

—04 / Development

Development

Developer
0.26N TMAH
Time
45–60 s
Method
puddle
Developer family
TMAH-based

Not published for this resist: Dilution, Rinse — characterize on-tool.

SOURCE: Negative Resist Mode Processing Guidelines table, p.1, and…

Negative Resist Mode Processing Guidelines table, p.1, and Positive Resist Mode Processing Guidelines table, p.2 of KL IR 15 TDS

—05 / Post-processing

Hard bake, etch & strip

Stripper
KL Photoresist Remover, or industry-standard removers such as NMP or DMSO-based strippers, at 50-80°C (TDS p.1 spec box; p.3 Resist Removal); thicker films may benefit from a two-bath process — first bath removes bulk resist, second bath cleans thoroughly.
Storage
Avoid light; store in an upright airtight container at 4-21°C, away from oxidizers, acids, bases and ignition sources (TDS p.3, Storage — the document's own wording says 'Keep developer away from oxidizers...', apparently a boilerplate carryover referring to the resist itself).

Not published for this resist: Hard bake, Descum, Etch resistance — characterize on-tool.

SOURCE: Negative Resist Mode Processing Guidelines table, p.1, and…

Negative Resist Mode Processing Guidelines table, p.1, and Positive Resist Mode Processing Guidelines table, p.2 of KL IR 15 TDS

—06 / Applications

Where it's used

Practical notes from the datasheet

KL IR 15 is a dual-tone image-reversal resist: exposed through a mask, it can be processed as either a positive resist (softbake -> exposure -> PEB at 115°C/60s -> develop -> optional 115°C/60s hardbake) or, via an added reversal bake and flood exposure, as a negative resist with the opposite tone (softbake -> exposure -> reversal bake at 130°C/120s -> flood exposure -> develop -> optional 130°C/60s hardbake). The reversal-bake temperature is explicitly called out by the manufacturer as the single most process-sensitive parameter (±1°C tolerance), while the flood exposure is explicitly non-critical over a 150-300 mJ/cm2 window — the opposite of the usual intuition that exposure dose is the sensitive knob. KemLab also sells a separate, distinct SKU, KL IR LO 15, whose own TDS (same Rev 10-2023 date) markets it specifically for lift-off-profile negative processing and states it 'can replace AZ 5214E'; the plain KL IR 15 datasheet used here makes no equivalent lift-off-profile claim. Negative mode is described as having 'excellent thermal stability' and being 'optimized for metallization processes.' The dnq-novolak chemistry entry is based on the classic DNQ image-reversal process (reversal bake + flood exposure) that both the KL IR 15 and the sibling KL IR LO 15 TDS describe.

—07 / Troubleshooting

Troubleshooting

Common failure modes for KL IR 15, answered from the manufacturer's datasheet and application notes. These are starting points — your substrate, tooling and environment shift the specifics, so calibrate on-tool.

KL IR 15 in negative mode gives different feature sizes from run to run — where do I look first?

The reversal bake. KemLab calls its temperature the most critical factor in the image-reversal process and says it must be held within ±1 °C of the 130 °C, 120 s guideline for a stable process. MicroChemicals' general note on DNQ image-reversal resists adds that this is hard to hold in a convection oven, so a hotplate is strongly preferred, and that thick, massive or poorly conducting substrates, or a gap to the plate, need their own bake tuning.

SOURCE: KL IR 15 Photoresist TDS (KemLab Inc., Rev 10-2023) — Negative…

KL IR 15 Photoresist TDS (KemLab Inc., Rev 10-2023) — Negative Resist Mode Processing Guidelines, p.1; Reversal Bake, p.2. MicroChemicals application note 'Image Reversal Resists and their Processing' (not a KemLab document) — Influence of Substrate and Equipment

Narrow spaces won't clear in negative-mode KL IR 15 — should I push the flood exposure harder?

Probably not. KemLab rates the flood as non-critical: 150 mJ/cm² broadband is the guideline and anything from 150 to 300 mJ/cm² has no major effect. MicroChemicals' image-reversal note points at the other two knobs: a first (masked) exposure that is too high scatters light into nominally dark areas and makes narrow spaces hard or impossible to develop, and a reversal bake that runs too hot or too long thermally destroys photoactive compound, so the flood-exposed resist then develops more slowly.

SOURCE: p.2. MicroChemicals application note

KL IR 15 Photoresist TDS (KemLab Inc., Rev 10-2023) — Flood Exposure, p.2. MicroChemicals application note 'Image Reversal Resists and their Processing' (not a KemLab document) — The first Exposure; Influence of Baking Parameters

How do I get more undercut from KL IR 15 for a metal lift-off?

Run it in negative mode, which KemLab describes as optimised for metallization, and tune the masked dose and the over-develop. MicroChemicals' note on DNQ image-reversal resists says a lower first-exposure dose leaves the substrate-near resist less converted and gives a stronger undercut, while a very high dose gives almost none; and that the undercut grows mainly after the film has cleared, with about 30 % over-development as a starting point. Keep the resist much thicker than the metal, and watch that narrow lines are not undercut free of the substrate.

SOURCE: p.1. MicroChemicals application note

KL IR 15 Photoresist TDS (KemLab Inc., Rev 10-2023) — Description, p.1. MicroChemicals application note 'Image Reversal Resists and their Processing' (not a KemLab document) — The first Exposure; Formation of the Undercut; Sufficient Resist Film Thickness

Crater-like defects show up in my KL IR 15 after the reversal bake — what causes them?

Nitrogen from the exposure. KL IR 15 runs the classic image-reversal process of a DNQ-novolak resist (reversal bake plus flood exposure), and MicroChemicals' image-reversal note explains that DNQ releases nitrogen during exposure; if it has not diffused out before the reversal bake softens the film, bubbles form and appear as craters after develop. Leave a delay between exposure and reversal bake — minutes for a 1–2 µm film, per that note.

SOURCE: MicroChemicals application note

MicroChemicals application note 'Image Reversal Resists and their Processing' (not a KemLab document) — Formation of Bubbles in the Resist Film

Can I use KL IR 15 as a plain positive resist, and does its 115 °C PEB reverse the image?

Yes to the first. KemLab's positive-mode sequence is softbake 105 °C 90 s, exposure, PEB 115 °C 60 s, then 45–60 s puddle in 0.26N TMAH, with no flood step; its positive-mode example uses about 70 mJ/cm² broadband on a 1.5 µm film, against 120 mJ/cm² for the negative-mode image exposure. MicroChemicals' image-reversal note states that without both the reversal bake and the flood exposure an image-reversal resist behaves as an ordinary positive resist.

SOURCE: KL IR 15 Photoresist TDS (KemLab Inc., Rev 10-2023) — Figures…

KL IR 15 Photoresist TDS (KemLab Inc., Rev 10-2023) — Figures 1–2 process boxes, p.1; Positive Resist Mode Processing Guidelines, p.2. MicroChemicals application note 'Image Reversal Resists and their Processing' (not a KemLab document) — Process Sequence

—08 / Sources

Sources & disclaimer

  • KemLab, Inc. — KL IR 15 datasheet (Copyright 2023 © KemLab, Inc., Rev 10-2023) · accessed 2026-07-10
  • https://www.kemlab.com/_files/ugd/5b8579_45ff748fc0894fa094a12c113747f6ef.pdf — KemLab's KL IR LO 15 (lift-off variant) TDS — a sibling product datasheet, not an SDS. It shows the same classic DNQ image-reversal process (reversal bake + flood exposure) as KL IR 15, the basis for classifying KL IR as dnq-novolak; its flood-exposure table value (200 mJ/cm2) disagrees with its own narrative text (150 mJ/cm2), noted under the flood exposure step above.

Manufacturer datasheet values are starting points; optimal parameters depend on your substrate, equipment and environment. Product names and trademarks belong to their respective owners. NANYTE is not affiliated with the manufacturers listed. Last updated 2026-09-28.

Cite this recipe

NANYTE. "KL IR 15 process recipe." NANYTE Photoresist Library. https://nanyte.com/photoresists/kl-ir. Accessed 2026-09-28.

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