https://nanyte.com/photoresists/ar-p-5350 · last updated 2026-09-28
- Manufacturer
- Allresist
- Tone
- positive
- Chemistry
- DNQ-novolak
- Thickness
- 0.7–2.0 µm
- Exposure dose
- 55 mJ/cm² (clearing dose, broadband stepper)
- Developer
- AR 300-35 (primary, fully worked example); AR 300-26 or AR 300-47 listed as alternatives
- Applications
- Lift-off · Etch mask
Cross-checked — two independent extractions agree on the spin curve and the single-value figures.
- Substrate
- Resist
- Exposed
Spin coating
Data points
| Series | rpm | µm |
|---|---|---|
| AR-P 5350 | 1000 | 2.0 |
| 1500 | 1.6 | |
| 2000 | 1.4 | |
| 3000 | 1.1 | |
| 4000 | 1.0 | |
| 6000 | 0.78 | |
| 7000 | 0.73 |
Values are the manufacturer’s starting points, not a guarantee — characterize on your own tool. Series digitized from a published figure are approximate (±10 %).
read from figure, 'Spin curve' (D₀/µm 0.0–12.0 vs rpm 0–8000), p.1 of AR-P5300_english_Allresist_product_information.pdf (Allresist, as of January 2018 per p.1 footer); two individually-legended traces plotted together — the lower diamond-marker trace explicitly labeled 'AR-P 5350' beside its rightmost point (the upper square-marker trace is the separately labeled 'AR-P 5320', not used here); 7 diamond markers at rpm 1000/1500/2000/3000/4000/6000/7000 (no marker is plotted at 5000 rpm — the line passes through that gap unmarked — and both traces terminate at 7000 rpm, not extending to the axis's 8000 rpm end). The figure's 4000 rpm marker reads ≈1.01 µm, matching the Properties I table's printed 'Film thickness/4000 rpm (µm): 1.0' for AR-P 5350 (p.1) and the Coating row of the process-conditions table (p.2: '4000 rpm, 60 s, 1.0 µm').
- Spin-speed-vs-thickness figure ('Spin curve', p.1, axes D₀/µm 0.0-12.0 vs rpm 0-8000) carries two separately labeled traces, AR-P 5320 (upper) and AR-P 5350 (lower) — only the AR-P 5350 trace is plotted here, from its 7 diamond markers between 1000-7000 rpm (no marker at 5000 rpm; the trace does not extend to 8000 rpm).
- The figure's own 4000 rpm marker reads ≈1.01 µm, matching the Properties I table's 1.0 µm anchor closely.
- Adhesion
- Allresist specifies its adhesion promoter AR 300-80 (p.1).
Soft bake
- Soft bake
- 105 °C · 4 min · hotplate
- Notes
- 105 °C, 4 min hot plate — confirmed identically in two places: the 'Process parameters' box (p.1, explicitly labeled 'AR-P 5350' worked example) and the 'Tempering' row of the process-conditions table (p.2, which also gives a convection-oven alternative: 100 °C, 40 min = 2400 s). Processing instructions (p.2) note: 'Higher tempering temperatures are required to produce the undercut' — the elevated bake (vs. a typical ~90–100 °C positive-resist softbake) is deliberate and load-bearing for the lift-off undercut profile, not incidental.
SOURCE: "Process parameters" box, p.1 (AR-P 5350) + "Tempering" row…
"Process parameters" box, p.1 (AR-P 5350) + "Tempering" row, "Process conditions" table, p.2, of AR-P5300_english_Allresist_product_information.pdf
Exposure dose
The manufacturer publishes 55 mJ/cm² (clearing dose, broadband stepper). Dose scales with film thickness and depends on your optics, so treat it as a starting point and run a dose array.
- As published
- The 55 mJ/cm² clearing dose is Allresist's figure for this grade, measured on a broadband stepper spanning 365, 405 and 436 nm alongside its 1.0 µm reference coat; no single-wavelength dose is published.
Not published for this resist: Dose at 365 nm, Dose at 405 nm — characterize on-tool.
SOURCE: "UV exposure" and "Exposure dose" rows, "Process conditions"…
"UV exposure" and "Exposure dose" rows, "Process conditions" table, p.2, AR-P 5350 column, of AR-P5300_english_Allresist_product_information.pdf
Development
- Developer
- AR 300-35 (primary, fully worked example); AR 300-26 or AR 300-47 listed as alternatives
- Dilution
- AR 300-35 at 1:2 (worked example); alternatively AR 300-26 at 1:7, or AR 300-47 at 2:3 — per the 'Development recommendations' table, AR-P 5350 row
- Time
- 60 s
- Method
- puddle
- Rinse
- DI-H2O, 30 s
- Developer family
- TMAH or buffered alkaline
SOURCE: "Process parameters" box, p.1 (AR-P 5350) +…
"Process parameters" box, p.1 (AR-P 5350) + "Development"/"Rinse" rows of the "Process conditions" table, p.2 + "Development recommendations" table, p.2 (AR-P 5350 row), of AR-P5300_english_Allresist_product_information.pdf
Hard bake, etch & strip
- Etch resistance
- Manufacturer states the series is 'plasma etching resistant, temperature stable up to 120 °C' (Characterisation, series-wide, p.1). A 'Plasma etching rates (nm/min)' table (5 Pa, 240–250 V bias: Ar-sputtering 7, O2 161, CF4 39, 80 CF4 + 16 O2 90) is given but is NOT labeled to a specific grade in this document (unlike the sibling AR-P 3500/3500T sheet, where an equivalent table WAS explicitly tagged). The glass-transition temperature (108 °C) and dielectric constant (3.1) given alongside it are numerically IDENTICAL to the same two fields in the AR-P 3500/3500T sheet, so these figures may be generic Allresist-family boilerplate rather than AR-P 5350-specific measurements.
- Stripper
- AR 300-76 or O2 plasma ashing ("Removal" row, "Process conditions" table, p.2, shared/unsplit across both grades). The 'Process chemicals' box (p.1, series-wide) additionally lists AR 600-71 as an alternative remover.
- Storage
- 10–18 °C, approximately 6-month shelf life ("Storage 6 month (°C)" row, "Properties I" table, p.1 — a single value shared across the AR-P 5320 and AR-P 5350 columns).
Not published for this resist: Hard bake, Descum — characterize on-tool.
Where it's used
Practical notes from the datasheet
AR-P 5350 is the thinner (1.0 µm at 4000 rpm), higher-contrast, higher-resolution (0.5 µm) grade of Allresist's AR-P 5300 series, a DNQ/novolac positive resist purpose-built for lift-off. Unlike most positive resists, an elevated softbake (105 °C, 4 min — well above a typical ~90–100 °C positive-resist prebake) deliberately produces the negative-sloped undercut profile needed for clean metal lift-off; the manufacturer states this explicitly ('higher tempering temperatures are required to produce the undercut'). Post-bake is explicitly 'Not required' for this series (process-conditions table, p.2). Development is aqueous-alkaline (AR 300-35, 1:2, 60 s in the fully worked example, confirmed twice in the document); AR 300-26 (1:7) and 'AR 300-47' (2:3) are named as alternatives with no stated time. The two-page source disagrees with itself on revision date: page 1's footer reads 'As of January 2018', page 2's reads 'As of January 2017' — both as printed, unreconciled.
Troubleshooting
Common failure modes for AR-P 5350, answered from the manufacturer's datasheet and application notes. These are starting points — your substrate, tooling and environment shift the specifics, so calibrate on-tool.
AR-P 5350 gives straight or sloped walls instead of a lift-off undercut — what went wrong?
Check the softbake first. AR-P 5350 builds its undercut only if the tempering step runs hotter than a standard positive-resist prebake. The datasheet says so directly and specifies 105 °C for 4 min on a hotplate, or 100 °C for 40 min in a convection oven, held to ±1 °C. Allresist explains that the resist contains components that harden the film surface during this bake, and the undercut then forms during aqueous-alkaline development. A cooler bake, or a hotplate reading low, loses it.
SOURCE: AR-P 5300 product information
AR-P 5300 product information (Allresist, as of January 2017/2018) — Process parameters, p.30; Process conditions: Tempering, and Processing instructions, p.31; FAQs concerning photoresists (Allresist, 03.03.2016) — Question 14, p.12
Which developer and dilution should I use for AR-P 5350 undercut profiles?
The datasheet's worked process is AR 300-35 at 1:2 for 60 s puddle at 21–23 °C (±0.5 °C). Its development table also lists AR 300-26 at 1:7 and AR 300-47 at 2:3 for this grade. Allresist's FAQ calls AR 300-26 the optimally adjusted developer for the undercut. Since the undercut is formed in the developer, pick one developer and dilution, then tune the develop time on sectioned test wafers rather than changing both at once.
SOURCE: AR-P 5300 product information
AR-P 5300 product information (Allresist, as of January 2017/2018) — Process conditions, Processing instructions and Development recommendations, p.31; FAQs concerning photoresists (Allresist, 03.03.2016) — Question 14, p.12
What dose should I start from for a 1.0 µm AR-P 5350 coat?
The datasheet gives E0 = 55 mJ/cm² on a broadband stepper (365/405/436 nm) for the 1.0 µm coat at 4000 rpm for 60 s; the reference parameters were run on a g-line stepper at NA 0.56. Treat 55 mJ/cm² as the clearing dose. Allresist's rule for positive resists is to add 10–20 % over dose-to-clear for patterning, and to re-measure on your own tool and developer. The value shifts with bake, developer strength and time after coating.
SOURCE: AR-P 5300 product information
AR-P 5300 product information (Allresist, as of January 2017/2018) — Process parameters, p.30; Process conditions: Coating and UV exposure, p.31; FAQs concerning photoresists (Allresist, 03.03.2016) — Question 9, p.8
The AR-P 5350 undercut is fine after develop but the lift-off is poor — could the evaporation be deforming it?
It can. The AR-P 5300 series is rated temperature-stable up to 120 °C, with a glass transition temperature of 108 °C, and the datasheet says a post-bake is not required. MicroChemicals' trouble shooter warns that radiation from the source and the heat of the condensing film can warm a resist past its softening point during deposition; the profile then rounds, metal coats the sidewall and lift-off gets worse or fails. Keep the substrate below 120 °C while you deposit. For removal, the datasheet lists AR 300-76 or O2 plasma ashing, with AR 600-71 as a further remover.
SOURCE: AR-P 5300 product information
AR-P 5300 product information (Allresist, as of January 2017/2018) — Characterisation, Properties II and Process chemicals, p.30; Process conditions: Post-bake and Removal, p.31; Photolithography Trouble Shooter (MicroChemicals) — Lift-off: Resist Softening and Rounding during Coating, p.18
Sources & disclaimer
- Allresist — AR-P 5350 datasheet (Inconsistent across pages: 'As of January 2018' (p.1 footer) vs. 'As of January 2017' (p.2 footer) — recorded verbatim, not reconciled.) · accessed 2026-07-10
- https://www.allresist.com/portfolio-item/developer-ar-300-47/ — Allresist's own product page for developer AR 300-47: gives its main component as TMAH and its metal-ion content as under 0.1 ppm. Read together with the AR 300-26 page (sodium borate / sodium hydroxide) and the AR 300-35 page (sodium metasilicate / phosphate), it establishes that the developers this resist's own "Development recommendations" table offers span both a metal-ion-free and a metal-ion-containing chemistry.
Manufacturer datasheet values are starting points; optimal parameters depend on your substrate, equipment and environment. Product names and trademarks belong to their respective owners. NANYTE is not affiliated with the manufacturers listed. Last updated 2026-09-28.